GB1145488A - Semiconductor device fabrication - Google Patents
Semiconductor device fabricationInfo
- Publication number
- GB1145488A GB1145488A GB1566266A GB1566266A GB1145488A GB 1145488 A GB1145488 A GB 1145488A GB 1566266 A GB1566266 A GB 1566266A GB 1566266 A GB1566266 A GB 1566266A GB 1145488 A GB1145488 A GB 1145488A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- mesas
- wafer
- mesa
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005389 semiconductor device fabrication Methods 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 4
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 239000013067 intermediate product Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000005049 silicon tetrachloride Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
1,145,488. Semi-conductor devices. TEXAS INSTRUMENTS Inc. 7 April, 1966 [30 April, 1965], No. 15662/66. Heading H1K. An intermediate product from which mutually isolated semi-conductor components can be made consists of a mono-crystalline semiconductor wafer with at least one mesa on one face, and a support body, which is separated from the wafer at least in the region surrounding each mesa by a layer or layers of a material harder than the wafer material. In the preferred embodiment mesas 2 mils high are formed on an N+ silicon wafer by photoresist and etching steps and silicon carbide deposited on the resulting surface from a gaseous mixture of toluene and silicon tetrachloride in the carrier gas hydrogen. Amorphous or monocrystalline silicon of N, P or intrinsic type is then deposited to a depth of 7-8 mils. If desired a layer of molybdenum or tungsten is deposited before the carbide to provide a low resistance current path. In an alternative method silicon dioxide is thermally grown over the prepared surface of the wafer, and the silicon carbide deposited on top of it. A variant of this is to etch the dioxide from the inter-mesa areas and then deposit the carbide on the cleared areas through a silicon mask. In all cases the support body is next lapped down to the silicon carbide around the mesas which acts as a stop preventing the further lapping of the mesas which might otherwise occur in securing a flat surface on a warped body. The lapped surface is covered with oxide masking, which is removed over the centres of the mesas by photo-resist and etching steps. A pit is formed in each mesa by gas etching through the mask and is filled with higher resistivity N-type silicon by epitaxial deposition. Finally the base regions of transistors and resistive tracks and transistor emitter regions are formed in neighbouring mesas by successive masked diffusion processes and the resistors and transistors connected to form a logic circuit by depositing metal over an apertured masking layer and then etching it selectively to form the interconnections. Other hard materials such as alumina and boron may be used instead of silicon carbide.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US45230065A | 1965-04-30 | 1965-04-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1145488A true GB1145488A (en) | 1969-03-12 |
Family
ID=23795943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1566266A Expired GB1145488A (en) | 1965-04-30 | 1966-04-07 | Semiconductor device fabrication |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1564832A1 (en) |
| GB (1) | GB1145488A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2451636A1 (en) * | 1979-03-14 | 1980-10-10 | Licentia Gmbh | PROCESS FOR PRODUCING A SEMICONDUCTOR-GLASS COMPOSITE MATERIAL |
-
1966
- 1966-04-07 GB GB1566266A patent/GB1145488A/en not_active Expired
- 1966-04-20 DE DE19661564832 patent/DE1564832A1/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2451636A1 (en) * | 1979-03-14 | 1980-10-10 | Licentia Gmbh | PROCESS FOR PRODUCING A SEMICONDUCTOR-GLASS COMPOSITE MATERIAL |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1564832A1 (en) | 1970-10-01 |
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