[go: up one dir, main page]

GB1131740A - Semi-conductor devices - Google Patents

Semi-conductor devices

Info

Publication number
GB1131740A
GB1131740A GB39042/67A GB3904267A GB1131740A GB 1131740 A GB1131740 A GB 1131740A GB 39042/67 A GB39042/67 A GB 39042/67A GB 3904267 A GB3904267 A GB 3904267A GB 1131740 A GB1131740 A GB 1131740A
Authority
GB
United Kingdom
Prior art keywords
layer
pure
alloyed
thick
sprayed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB39042/67A
Inventor
Vitautus Balio Tolutis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INST FYSIKI I MAT
Original Assignee
INST FYSIKI I MAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INST FYSIKI I MAT filed Critical INST FYSIKI I MAT
Priority to GB39042/67A priority Critical patent/GB1131740A/en
Publication of GB1131740A publication Critical patent/GB1131740A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Abstract

1,131,740. Semi-conductor devices. INSTITUTE FYSIKI I MATEMATIKI. 24 Aug., 1967, No. 39044/67. Addition to 1,093,122. Heading H1K. The manufacture of a selenium memory cell comprises forming a layer of Se 2-3 Á thick alloyed with Ag, between a layer of pure Se and a layer which forms a rectifying contact with Se. The Se/Ag alloyed layer may alternatively be replaced by a 1-2 Á thick layer of silver selenide, or both this layer and the layer of pure Se may be replaced by a single layer of silver selenide 5-10 Á thick, in which case the cell is electroformed by reverse current. The cell is preferably formed on a monocrystalline substrate of Ge or Si on to which are sprayed electrode layers firstly of Al, through a mask, and then of Bi. A pure Se layer is then sprayed on and crystallized at 200‹ C. to form hexagonal Se having its c-axis along the substrate surface. The alloyed Se/Ag layer is sprayed on, after which the rectifying layer, e.g. of cadmium selenide or of Cd/Sn alloy covered with Sn, is applied.
GB39042/67A 1967-08-24 1967-08-24 Semi-conductor devices Expired GB1131740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB39042/67A GB1131740A (en) 1967-08-24 1967-08-24 Semi-conductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB39042/67A GB1131740A (en) 1967-08-24 1967-08-24 Semi-conductor devices

Publications (1)

Publication Number Publication Date
GB1131740A true GB1131740A (en) 1968-10-23

Family

ID=10407273

Family Applications (1)

Application Number Title Priority Date Filing Date
GB39042/67A Expired GB1131740A (en) 1967-08-24 1967-08-24 Semi-conductor devices

Country Status (1)

Country Link
GB (1) GB1131740A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003065456A2 (en) * 2002-01-31 2003-08-07 Micron Technology, Inc. Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003065456A2 (en) * 2002-01-31 2003-08-07 Micron Technology, Inc. Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures
WO2003065456A3 (en) * 2002-01-31 2003-12-04 Micron Technology Inc Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures
US6812087B2 (en) 2002-01-31 2004-11-02 Micron Technology, Inc. Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures

Similar Documents

Publication Publication Date Title
GB1529139A (en) Photovoltaic cell and a method of manufacturing such a cell
JPS5513938A (en) Photoelectronic conversion semiconductor device and its manufacturing method
ES8102420A1 (en) IMPROVEMENTS IN PHOTOVOLTAIC CELLS
US2766144A (en) Photocell
GB767311A (en) Improvements in or relating to semiconductor devices
GB1292585A (en) A mask or original for reproducing patterns on light sensitive layers and a method of producing such a mask or original
GB1337283A (en) Method of manufacturing a semiconductor device
GB1131740A (en) Semi-conductor devices
JPH0456351U (en)
JPS5312281A (en) Semiconductor control rectifying element
GB1302206A (en)
JPS5356988A (en) Photovoltaic element
JPS5745980A (en) Amorphous solar battery and manufacture thereof
JPS5354996A (en) Productin of solar battery
JPS52124888A (en) Production of solar battery
JPS5670675A (en) Manufacture of photoelectric converter
GB809080A (en) Methods of manufacturing selenium rectifiers
GB1022808A (en) Light cell
JPS5615086A (en) Photoelectric converting device
JPS5563885A (en) Photovoltaic device
GB1322369A (en) Subsurface gallium arsenide schottkytype diode and method of fabricating same
JPS648612A (en) Compound semiconductor device
JPS5326591A (en) Production of image pickup unit using charge transfer element
GB834658A (en) Improvements in or relating to photo-conductive cells
JPS55121678A (en) Charge transfer device