GB1107343A - Microminiaturised, integrated circuit arrangement - Google Patents
Microminiaturised, integrated circuit arrangementInfo
- Publication number
- GB1107343A GB1107343A GB3703/66A GB370366A GB1107343A GB 1107343 A GB1107343 A GB 1107343A GB 3703/66 A GB3703/66 A GB 3703/66A GB 370366 A GB370366 A GB 370366A GB 1107343 A GB1107343 A GB 1107343A
- Authority
- GB
- United Kingdom
- Prior art keywords
- integrated circuit
- microminiaturised
- recombination centres
- diodes
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000006798 recombination Effects 0.000 abstract 3
- 238000005215 recombination Methods 0.000 abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 238000007788 roughening Methods 0.000 abstract 1
- 238000006748 scratching Methods 0.000 abstract 1
- 230000002393 scratching effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
1,107,343. Semi-conductor devices. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 27 Jan., 1966 [18 Feb., 1965], No. 3703/66. Heading H1K. Active and/or passive components in an integrated circuit are isolated by means of carrier recombination centres. In a planar circuit comprising a transistor and two diodes the transistor is isolated from the diodes by removing a strip of a surface oxide layer and diffusing gold or nickel into the wafer. The recombination centres may also, be uniformly distributed through the wafer, for example by introducing gold into the semiconductor material as it is drawn from the melt. The isolation may also be achieved by scratching the surface, or by removing part of the oxide layer and mordant roughening the surface, to produce the recombination centres.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET28013A DE1216990B (en) | 1965-02-18 | 1965-02-18 | Solid-state circuit and process for its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1107343A true GB1107343A (en) | 1968-03-27 |
Family
ID=7553863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3703/66A Expired GB1107343A (en) | 1965-02-18 | 1966-01-27 | Microminiaturised, integrated circuit arrangement |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1216990B (en) |
| GB (1) | GB1107343A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1256116A (en) * | 1959-02-06 | 1961-03-17 | Texas Instruments Inc | New miniature electronic circuits and processes for their manufacture |
-
1965
- 1965-02-18 DE DET28013A patent/DE1216990B/en active Pending
-
1966
- 1966-01-27 GB GB3703/66A patent/GB1107343A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1216990B (en) | 1966-05-18 |
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