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GB1099542A - Method and apparatus for measuring breakdown voltages of diodes and transistors - Google Patents

Method and apparatus for measuring breakdown voltages of diodes and transistors

Info

Publication number
GB1099542A
GB1099542A GB651/65A GB65165A GB1099542A GB 1099542 A GB1099542 A GB 1099542A GB 651/65 A GB651/65 A GB 651/65A GB 65165 A GB65165 A GB 65165A GB 1099542 A GB1099542 A GB 1099542A
Authority
GB
United Kingdom
Prior art keywords
jan
transistor
diode
diodes
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB651/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Egyesuelt Izzolampa es Villamossagi Rt
Original Assignee
Egyesuelt Izzolampa es Villamossagi Rt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Egyesuelt Izzolampa es Villamossagi Rt filed Critical Egyesuelt Izzolampa es Villamossagi Rt
Publication of GB1099542A publication Critical patent/GB1099542A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G01R31/261—Circuits therefor for testing bipolar transistors for measuring break-down voltage or punch through voltage therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Of Devices, Machine Parts, Or Other Structures Thereof (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Nitrogen And Oxygen As The Only Ring Hetero Atoms (AREA)
  • Rectifiers (AREA)

Abstract

1,099,542. Automatic current control. EGYESULT IZZOLAMPA ES VILLAMOSSAGI RESZVENVTARSASAG. Jan. 6, 1965 [Jan. 6, 1964], No. 651/65. Heading G3R. [Also in Division G1] In a system for controlling the magnitude of a test current applied to the collector base junction of a transistor 1 in an avalanche breakdown test (see Division G1) the current provided by a generator 2 is monitored by a resistor Rm and the voltage thereacross applied via transformer T2 and diode D5 to an emitter follower circuit V 10 , V 11 and then rectified by diode D3. The rectified voltage is applied to a differential amplifier V 6 , V 7 and the error signal is passed via V 9 , V 8 to control the amplitude of the output from the pulse generating system into the transformer T1 and thence to the transistor 1.
GB651/65A 1964-01-06 1965-01-06 Method and apparatus for measuring breakdown voltages of diodes and transistors Expired GB1099542A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
HUEE001063 1964-01-06

Publications (1)

Publication Number Publication Date
GB1099542A true GB1099542A (en) 1968-01-17

Family

ID=10995166

Family Applications (1)

Application Number Title Priority Date Filing Date
GB651/65A Expired GB1099542A (en) 1964-01-06 1965-01-06 Method and apparatus for measuring breakdown voltages of diodes and transistors

Country Status (3)

Country Link
AT (1) AT261059B (en)
DE (1) DE1464914B2 (en)
GB (1) GB1099542A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113030676A (en) * 2021-02-26 2021-06-25 陕西三海测试技术开发有限责任公司 Diode triode wafer testing method based on near particle method
CN113655359A (en) * 2021-08-10 2021-11-16 广东安朴电力技术有限公司 Transistor monitoring circuit and rectifying device
CN113671336A (en) * 2021-08-20 2021-11-19 上海瞻芯电子科技有限公司 Power device testing device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113030676A (en) * 2021-02-26 2021-06-25 陕西三海测试技术开发有限责任公司 Diode triode wafer testing method based on near particle method
CN113655359A (en) * 2021-08-10 2021-11-16 广东安朴电力技术有限公司 Transistor monitoring circuit and rectifying device
CN113671336A (en) * 2021-08-20 2021-11-19 上海瞻芯电子科技有限公司 Power device testing device
CN113671336B (en) * 2021-08-20 2024-03-08 上海瞻芯电子科技有限公司 Power device testing device

Also Published As

Publication number Publication date
DE1464914B2 (en) 1971-04-22
AT261059B (en) 1968-04-10
DE1464914A1 (en) 1969-12-18

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