GB1083522A - Boron nitride thin film device and process for making same - Google Patents
Boron nitride thin film device and process for making sameInfo
- Publication number
- GB1083522A GB1083522A GB50621/64A GB5062164A GB1083522A GB 1083522 A GB1083522 A GB 1083522A GB 50621/64 A GB50621/64 A GB 50621/64A GB 5062164 A GB5062164 A GB 5062164A GB 1083522 A GB1083522 A GB 1083522A
- Authority
- GB
- United Kingdom
- Prior art keywords
- boron nitride
- substrate
- interlayer
- boron
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052582 BN Inorganic materials 0.000 title abstract 17
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title abstract 17
- 239000010409 thin film Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 14
- 229910052751 metal Inorganic materials 0.000 abstract 10
- 239000002184 metal Substances 0.000 abstract 10
- 239000011229 interlayer Substances 0.000 abstract 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 4
- 238000000151 deposition Methods 0.000 abstract 4
- 239000010410 layer Substances 0.000 abstract 4
- 150000002739 metals Chemical class 0.000 abstract 4
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 abstract 4
- PVTNQLALWCJMRP-UHFFFAOYSA-N 1,2,3-trichloro-1,3,5,2,4$l^{2},6$l^{2}-triazatriborinane Chemical compound ClB1N(Cl)[B]N[B]N1Cl PVTNQLALWCJMRP-UHFFFAOYSA-N 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- 229910000881 Cu alloy Inorganic materials 0.000 abstract 2
- 229910000640 Fe alloy Inorganic materials 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 229910021529 ammonia Inorganic materials 0.000 abstract 2
- 239000003990 capacitor Substances 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 2
- 238000007796 conventional method Methods 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract 2
- 229910052753 mercury Inorganic materials 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000006060 molten glass Substances 0.000 abstract 2
- 229910052758 niobium Inorganic materials 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 239000011241 protective layer Substances 0.000 abstract 2
- 239000003870 refractory metal Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910052715 tantalum Inorganic materials 0.000 abstract 2
- 229910052721 tungsten Inorganic materials 0.000 abstract 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B11/00—Communication cables or conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/002—Inhomogeneous material in general
- H01B3/004—Inhomogeneous material in general with conductive additives or conductive layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/025—Other inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/085—Vapour deposited
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Structural Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
A film of boron nitride is deposited on a substrate by first forming an interlayer on the substrate which will chemically bond to the substrate and to boron nitride, and then depositing boron nitride on the interlayer. The substrate may be a refractory metal, e.g. Me, W, Nb, Ta, alloys thereof, ferrous alloys, or carbon or silicon, or another metal such as copper or a copper alloy if a layer of one of the above metals is formed thereon prior to forming the interlayer. The interlayer preferably has elements common to the substrate and boron nitride, e.g. the metal boride or nitride, but may also be e.g. an oxide. Suitably the substrate, degreased, is held in a chamber evacuated to less than 1 micron of mercury, boron trichloride is introduced to a pressure of 5 to 500 microns and the substrate heated at 700 to 1700 DEG C. for 15 to 60 secs. The chamber is again evacuated to less than 1 micron, filled with b -trichloroborazole to a pressure of 10 to 20 mm. and heated at 700 to 1700 DEG C. for 1 to 5 minutes to form a layer of boron nitride 0.2 to 5 microns thick. The source of boron nitride may alternatively be a mixture of boron trichloride and ammonia. The boron nitride film may be used as insulation for a conductor, a voltage protection device, as a protective layer in equipment used for handling molten glass and metals and as a capacitor dielectric. In the latter case metal electrodes are applied to the boron nitride film by conventional methods, e.g. deposition of aluminium or gold from the vapour phase.ALSO:A film of boron nitride is deposited on a substrate by first forming an interlayer on the substrate which will chemically bond to the substrate and to boron nitride, and then depositing boron nitride on the interlayer. The substrate may be a refractory metal, e.g. Mo, W, Nb, Ta, alloys thereof, ferrous alloys, or carbon or silicon, or another metal such as copper or a copper alloy if a layer of one of the above metals is formed thereon prior to forming the interlayer. The interlayer preferably has elements common to the substrate and boron nitride, e.g. the metal boride or nitride, but may also be, e.g. an oxide. Suitably the substrate, degreased, is held in a chamber evacuated to less than 1 micron of mercury, boron trichloride is introduced to a pressure of 5 to 500 microns and the substrate heated at 700 DEG to 1700 DEG C. for 15 to 60 secs. The chamber is again evacuated to less than 1 micron, filled with b -trichloroborazole to a pressure of 10 to 20 mm. and heated at 700 DEG to 1700 DEG C. for 1 to 5 minutes to form a layer of boron nitride 0.2 to 5 microns thick. The source of boron nitride may alternatively be a mixture of boron trichloride and ammonia. The boron nitride film may be used as insulation for a conductor, a voltage protection device, as a protective layer in equipment used for handling molten glass and metals and as a capacitor dielectric. In the latter case metal electrodes are applied to the boron nitride film by conventional methods, e.g. deposition of aluminium or gold from the vapour phase.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33012363A | 1963-12-12 | 1963-12-12 | |
| US330023A US3414435A (en) | 1963-12-12 | 1963-12-12 | Process for making boron nitride film capacitors |
| US37455864A | 1964-06-02 | 1964-06-02 | |
| US505204A US3359468A (en) | 1963-12-12 | 1965-09-10 | Boron nitride film capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1083522A true GB1083522A (en) | 1967-09-13 |
Family
ID=27502412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB50621/64A Expired GB1083522A (en) | 1963-12-12 | 1964-12-11 | Boron nitride thin film device and process for making same |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1521528B2 (en) |
| GB (1) | GB1083522A (en) |
| NL (1) | NL6414325A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2144260A (en) * | 1983-07-08 | 1985-02-27 | Raychem Ltd | Article with refractory coating |
| US4985313A (en) * | 1985-01-14 | 1991-01-15 | Raychem Limited | Wire and cable |
| WO2006039288A1 (en) * | 2004-09-29 | 2006-04-13 | Paint & Powder Technologies Llc | Recycling process for boron nitride |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60238481A (en) * | 1984-05-14 | 1985-11-27 | Sumitomo Electric Ind Ltd | Multilayered coated hard metal |
-
1964
- 1964-12-09 NL NL6414325A patent/NL6414325A/xx unknown
- 1964-12-11 GB GB50621/64A patent/GB1083522A/en not_active Expired
- 1964-12-11 DE DE19641521528 patent/DE1521528B2/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2144260A (en) * | 1983-07-08 | 1985-02-27 | Raychem Ltd | Article with refractory coating |
| US4985313A (en) * | 1985-01-14 | 1991-01-15 | Raychem Limited | Wire and cable |
| WO2006039288A1 (en) * | 2004-09-29 | 2006-04-13 | Paint & Powder Technologies Llc | Recycling process for boron nitride |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6414325A (en) | 1965-06-14 |
| DE1521528A1 (en) | 1969-10-02 |
| DE1521528B2 (en) | 1972-05-18 |
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