GB1076714A - A circuit arrangement for pulse excitation of power transistors - Google Patents
A circuit arrangement for pulse excitation of power transistorsInfo
- Publication number
- GB1076714A GB1076714A GB4479565A GB4479565A GB1076714A GB 1076714 A GB1076714 A GB 1076714A GB 4479565 A GB4479565 A GB 4479565A GB 4479565 A GB4479565 A GB 4479565A GB 1076714 A GB1076714 A GB 1076714A
- Authority
- GB
- United Kingdom
- Prior art keywords
- base
- diode
- pulse
- voltage
- circuit arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/02—Shaping pulses by amplifying
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Dc-Dc Converters (AREA)
Abstract
1,076,714. Switching circuits. VYZKUMNY USTAV MATEMATICKYCH STROJU. Oct. 22, 1965 [Oct. 26, 1964], No. 44795/65. Heading H3T. A power transistor T3 (Fig. 3), is turned on by a pulse which makes T1 conductive and passes base current to T3 via diode D2, T2 being held off. At the end of the pulse, the charge stored in the base of T3 cuts off D2 and leaks away through T2 until the base voltage of T3 falls to the Zener level of diode ZD as diode D1 is now conductive. The supply - E1 can be greater than the permissible reverse base-emitter voltage of T3 if the base voltage of T3 is not allowed to reach a steady value. The input pulses can be applied via a transformer between base and emitter of T1.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS594564 | 1964-10-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1076714A true GB1076714A (en) | 1967-07-19 |
Family
ID=5405387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4479565A Expired GB1076714A (en) | 1964-10-26 | 1965-10-22 | A circuit arrangement for pulse excitation of power transistors |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1076714A (en) |
-
1965
- 1965-10-22 GB GB4479565A patent/GB1076714A/en not_active Expired
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