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GB1070622A - Improvements in or relating to methods of manufacturing photo-sensitive devices - Google Patents

Improvements in or relating to methods of manufacturing photo-sensitive devices

Info

Publication number
GB1070622A
GB1070622A GB10053/64A GB1005364A GB1070622A GB 1070622 A GB1070622 A GB 1070622A GB 10053/64 A GB10053/64 A GB 10053/64A GB 1005364 A GB1005364 A GB 1005364A GB 1070622 A GB1070622 A GB 1070622A
Authority
GB
United Kingdom
Prior art keywords
oxygen
layer
bombardment
electrodes
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB10053/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1070622A publication Critical patent/GB1070622A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/085Oxides of iron group metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5826Treatment with charged particles
    • C23C14/5833Ion beam bombardment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5846Reactive treatment
    • C23C14/5853Oxidation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36Photoelectric screens; Charge-storage screens
    • H01J29/39Charge-storage screens
    • H01J29/45Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36Photoelectric screens; Charge-storage screens
    • H01J29/39Charge-storage screens
    • H01J29/45Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/456Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233Manufacture of photoelectric screens or charge-storage screens
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00Compositions
    • Y10S252/95Doping agent source material
    • Y10S252/951Doping agent source material for vapor transport

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Hybrid Cells (AREA)
  • Physical Vapour Deposition (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

1,070,622. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. March 10, 1964 [March 12, 1963], No. 10053/64. Heading H1K. In the manufacture of a photo-sensitive device of lead monoxide, that part of the active layer to which a negative potential is to be applied in operation is subjected to bombardment with electrically accelerated particles of an acceptor impurity to produce a P-type region giving a low operational dark current. As described this acceptor impurity is oxygen. In making a photo-cell a glass support is provided with two sets of alternately placed electrodes, the electrodes of each set being interconnected. The glass support may temporarily form a wall of an evaporation chamber. Regions of lead monoxide are vapour deposited in an oxygen/argon atmosphere through a mask over one set of electrodes only. These (to be the negative electrodes in operation) consist of tin oxide or vapour-deposited silver. The evaporation chamber is evacuated and refilled at low pressure with oxygen and a direct or alternating potential applied between the coated electrodes and a metal grid spaced from the assembly (the grid is made negative if a direct potential is used) to set up a discharge. The surface of each oxide layer is converted to P-type conductivity by absorbed oxygen. Next a continuous layer of intrinsic or substantially compensated material is evaporated over both sets of electrodes. The second set consist of nickel or platinum. The deposition is carried out in an atmosphere containing oxygen and one or more of water vapour, hydrogen sulphide, hydrogen selenide, and hydrogen telluride. These hydrides act as donors and their anions give the oxide increased red sensitivity. To complete the cell, a cover is sealed to the support and the enclosed space evacuated and preferably refilled with oxygen at low pressure. The cover should be transparent if alternative supports are used which are opaque. In a second embodiment the bulb of a vidicon camera tube is connected to a gas/vacuum system. A transparent tin oxide electrode is formed on the tube window and a layer of lead monoxide deposited on this by evaporation from a H.F.- heated platinum crucible. The deposition takes place in an oxygen/argon atmosphere. The tube window is held at a fixed temperature by a glycerine bath temporarily formed about the window. Bombardment is then carried out in an oxygen atmosphere. The temperature of the film need not be stabilized. The crucible and the sensitive layer, connected through the tin oxide electrode, are used as discharge electrodes. Light may be shone on the layer to make it sufficiently conductive. Instead of the electrode/lead oxide a cylindrical electrode surrounding the crucible may be used as the second discharge electrode. After bombardment the oxygen atmosphere is removed and the layer then exposed to hydrogen sulphide, hydrogen selenide, hydrogen telluride or mixtures thereof. Oxygen bombardment and hydride treatment may be repeated alternately as desired. The process should be terminated by an oxygen bombardment to give the surface exposed to the electron beam in operation a P-type surface layer which, however, should not possess significant lateral conductivity. It is stated that the final layer produced may have, for example, a pi(n)(i)p sequence and that this structure may be repeated if sufficient bombardment/exposure steps are given. The (n) and (i) layers may not be present since their existence depends on the degree of compensation of H 2 X by the oxygen bombardment.
GB10053/64A 1963-03-12 1964-03-10 Improvements in or relating to methods of manufacturing photo-sensitive devices Expired GB1070622A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL63290120A NL145987B (en) 1963-03-12 1963-03-12 METHOD OF MANUFACTURING AN IMAGE RECORDING TUBE AND AN IMAGE RECORDING TUBE MADE BY USING THIS METHOD.

Publications (1)

Publication Number Publication Date
GB1070622A true GB1070622A (en) 1967-06-01

Family

ID=19754516

Family Applications (1)

Application Number Title Priority Date Filing Date
GB10053/64A Expired GB1070622A (en) 1963-03-12 1964-03-10 Improvements in or relating to methods of manufacturing photo-sensitive devices

Country Status (12)

Country Link
US (1) US3307983A (en)
JP (1) JPS4027987B1 (en)
AT (1) AT245640B (en)
CH (1) CH430898A (en)
DE (1) DE1489145B2 (en)
DK (1) DK119436B (en)
ES (1) ES297431A1 (en)
FR (1) FR1385209A (en)
GB (1) GB1070622A (en)
NL (2) NL145987B (en)
NO (1) NO116423B (en)
SE (1) SE327471B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR95921E (en) * 1963-08-06 1972-03-10 Gen Electric Lead monoxide plate for x-ray electrophotography, and method for its preparation.
NL6500458A (en) * 1965-01-15 1966-07-18
US3468705A (en) * 1965-11-26 1969-09-23 Xerox Corp Method of preparing lead oxide films
US3492621A (en) * 1966-06-24 1970-01-27 Nippon Kogaku Kk High sensitivity photoconductive cell
US3607388A (en) * 1967-03-18 1971-09-21 Tokyo Shibaura Electric Co Method of preparing photoconductive layers on substrates
JPS4910709B1 (en) * 1968-03-08 1974-03-12
US3530055A (en) * 1968-08-26 1970-09-22 Ibm Formation of layers of solids on substrates
JPS4929828B1 (en) * 1968-10-25 1974-08-07
US4189406A (en) * 1974-02-04 1980-02-19 Eastman Kodak Company Method for hot-pressing photoconductors
US3909308A (en) * 1974-08-19 1975-09-30 Rca Corp Production of lead monoxide coated vidicon target
US4170662A (en) * 1974-11-05 1979-10-09 Eastman Kodak Company Plasma plating
US4001099A (en) * 1976-03-03 1977-01-04 Rca Corporation Photosensitive camera tube target primarily of lead monoxide
JPH068509B2 (en) * 1985-09-17 1994-02-02 勝 岡田 Method of manufacturing ferroelectric thin film

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH291362A (en) * 1950-08-03 1953-06-15 Berghaus Elektrophysik Anst Method and device for carrying out technical processes by means of gas discharges, which are connected with a cathodeic material atomization.
US3174882A (en) * 1961-02-02 1965-03-23 Bell Telephone Labor Inc Tunnel diode

Also Published As

Publication number Publication date
JPS4027987B1 (en) 1965-12-10
FR1385209A (en) 1965-01-08
NL145987B (en) 1975-05-15
SE327471B (en) 1970-08-24
DE1489145A1 (en) 1969-01-09
US3307983A (en) 1967-03-07
ES297431A1 (en) 1964-05-16
NL290120A (en)
DK119436B (en) 1971-01-04
DE1489145B2 (en) 1970-09-10
CH430898A (en) 1967-02-28
AT245640B (en) 1966-03-10
NO116423B (en) 1969-03-24

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