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GB1056390A - Notched strain transducers and method of making - Google Patents

Notched strain transducers and method of making

Info

Publication number
GB1056390A
GB1056390A GB3593864A GB3593864A GB1056390A GB 1056390 A GB1056390 A GB 1056390A GB 3593864 A GB3593864 A GB 3593864A GB 3593864 A GB3593864 A GB 3593864A GB 1056390 A GB1056390 A GB 1056390A
Authority
GB
United Kingdom
Prior art keywords
pick
ups
junctions
sept
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3593864A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US268772A external-priority patent/US3328649A/en
Priority claimed from US312742A external-priority patent/US3283271A/en
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of GB1056390A publication Critical patent/GB1056390A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Transducers For Ultrasonic Waves (AREA)

Abstract

1,056,390. Miscellaneous amplifiers; pick-ups. RAYTHEON CO. Sept. 2, 1964 [Sept. 30, 1963], No. 36938/64. Headings H3B and H4J. [Also in Division H1] Piezo-resistive elements comprising a PN junction are used in a tuned amplifier and oscillator circuits and as stereo pick-ups. In the amplifier (Fig. 3, not shown) the junction is formed in the element parallel to a grooved surface, the corners of the groove having a radius of curvature less than 1 Á. The element is clamped at one end with its free end, carrying a ferromagnetic coating, disposed in the gap of an electromagnet energized by the input signal. Signals at the mechanical resonance frequency of the element give rise to amplified output signals. The oscillator (Fig. 4, not shown) is similar except that the input is D.C. and a feedback loop is provided. A stereo pick-up (Fig. 6) comprises a pair of diffused PN junctions with mutually perpendicular notches 85, 87 disposed on opposite sides of the stylus. In operation the junctions are reverse biased and the output signals from the two channels derived across series resistors (Fig. 7, ont shown).
GB3593864A 1963-03-28 1964-09-02 Notched strain transducers and method of making Expired GB1056390A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US268772A US3328649A (en) 1963-03-28 1963-03-28 Semiconductor transducers
US312742A US3283271A (en) 1963-09-30 1963-09-30 Notched semiconductor junction strain transducer

Publications (1)

Publication Number Publication Date
GB1056390A true GB1056390A (en) 1967-01-25

Family

ID=26953315

Family Applications (2)

Application Number Title Priority Date Filing Date
GB762864A Expired GB1045934A (en) 1963-03-28 1964-02-24 Semiconductor transducers
GB3593864A Expired GB1056390A (en) 1963-03-28 1964-09-02 Notched strain transducers and method of making

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB762864A Expired GB1045934A (en) 1963-03-28 1964-02-24 Semiconductor transducers

Country Status (4)

Country Link
DE (2) DE1256443B (en)
GB (2) GB1045934A (en)
NL (3) NL6403085A (en)
SE (2) SE306562B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2128806A (en) * 1982-09-29 1984-05-02 Itt Ind Ltd Pressure transducer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2929885A (en) * 1953-05-20 1960-03-22 Rca Corp Semiconductor transducers
US3049685A (en) * 1960-05-18 1962-08-14 Electro Optical Systems Inc Electrical strain transducer

Also Published As

Publication number Publication date
SE308031B (en) 1969-01-27
NL6403085A (en) 1964-09-29
DE1441853A1 (en) 1969-04-17
NL6411143A (en) 1965-03-31
NL133019C (en)
GB1045934A (en) 1966-10-19
SE306562B (en) 1968-12-02
DE1256443B (en) 1967-12-14

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