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GB1045429A - Transistors - Google Patents

Transistors

Info

Publication number
GB1045429A
GB1045429A GB13629/65A GB1362965A GB1045429A GB 1045429 A GB1045429 A GB 1045429A GB 13629/65 A GB13629/65 A GB 13629/65A GB 1362965 A GB1362965 A GB 1362965A GB 1045429 A GB1045429 A GB 1045429A
Authority
GB
United Kingdom
Prior art keywords
ohm
type
hole
silicon
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB13629/65A
Inventor
Geoffrey Arthur Leonard King
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB13629/65A priority Critical patent/GB1045429A/en
Priority to NL6603633A priority patent/NL6603633A/xx
Priority to DE19661564139 priority patent/DE1564139C/en
Priority to FR55778A priority patent/FR1473633A/en
Priority to BE678737D priority patent/BE678737A/xx
Priority to GB27106/66A priority patent/GB1084937A/en
Publication of GB1045429A publication Critical patent/GB1045429A/en
Priority to DE1589687A priority patent/DE1589687C3/en
Priority to FR110769A priority patent/FR93427E/en
Priority to BE700017D priority patent/BE700017A/xx
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,045,429. Transistors. STANDARD TELEPHONES & CABLES Ltd. March 31, 1965, No. 13629/65. Heading H1K. An insulated gate field effect transistor has source and drain regions of one conductivity type separated by a channel region consisting of the thickness of an epitaxially deposited layer of opposite conductivity type. In the embodiment a hole 14 (Fig. 2b, not shown) is etched using hydrogen chloride, through 0.001 ohm cm. N-type epitaxial layer 11 and part of substrate 10 of 1 ohm cm. P-type silicon. Epitaxial deposition of 5 ohm cm. P-type silicon results in layer 15, 5 Á thick, which lines the hole 14. The hole is then filled with 0.001 ohm cm. N-type material and the surface covered with silicon oxide. Metal connections 18, 20 and 19 provide contacts to source drain and gate regions respectively. Germanium may be used in place of silicon.
GB13629/65A 1965-03-31 1965-03-31 Transistors Expired GB1045429A (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
GB13629/65A GB1045429A (en) 1965-03-31 1965-03-31 Transistors
NL6603633A NL6603633A (en) 1965-03-31 1966-03-18
DE19661564139 DE1564139C (en) 1965-03-31 1966-03-30 Field effect transistor with isolated control electrode
FR55778A FR1473633A (en) 1965-03-31 1966-03-31 Field effect transistor
BE678737D BE678737A (en) 1965-03-31 1966-03-31
GB27106/66A GB1084937A (en) 1965-03-31 1966-06-17 Transistors
DE1589687A DE1589687C3 (en) 1965-03-31 1967-06-01 Solid-state circuit with isolated field effect transistors and process for their manufacture
FR110769A FR93427E (en) 1965-03-31 1967-06-16 Field effect transistors.
BE700017D BE700017A (en) 1965-03-31 1967-06-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB13629/65A GB1045429A (en) 1965-03-31 1965-03-31 Transistors

Publications (1)

Publication Number Publication Date
GB1045429A true GB1045429A (en) 1966-10-12

Family

ID=10026500

Family Applications (1)

Application Number Title Priority Date Filing Date
GB13629/65A Expired GB1045429A (en) 1965-03-31 1965-03-31 Transistors

Country Status (4)

Country Link
BE (1) BE678737A (en)
FR (1) FR1473633A (en)
GB (1) GB1045429A (en)
NL (1) NL6603633A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3528168A (en) * 1967-09-26 1970-09-15 Texas Instruments Inc Method of making a semiconductor device
US3600642A (en) * 1968-11-15 1971-08-17 David F Allison Mos structure with precisely controlled channel length and method
US3853644A (en) * 1969-09-18 1974-12-10 Kogyo Gijutsuin Transistor for super-high frequency and method of manufacturing it
EP0271247A2 (en) * 1986-12-04 1988-06-15 Seiko Instruments Inc. A MOS field effect transistor and a process for fabricating the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3528168A (en) * 1967-09-26 1970-09-15 Texas Instruments Inc Method of making a semiconductor device
US3600642A (en) * 1968-11-15 1971-08-17 David F Allison Mos structure with precisely controlled channel length and method
US3853644A (en) * 1969-09-18 1974-12-10 Kogyo Gijutsuin Transistor for super-high frequency and method of manufacturing it
EP0271247A2 (en) * 1986-12-04 1988-06-15 Seiko Instruments Inc. A MOS field effect transistor and a process for fabricating the same
EP0271247A3 (en) * 1986-12-04 1989-02-01 Seiko Instruments Inc. A mos field effect transistor and a process for fabricating the same

Also Published As

Publication number Publication date
FR1473633A (en) 1967-03-17
DE1564139B2 (en) 1970-09-10
BE678737A (en) 1966-09-30
NL6603633A (en) 1966-10-03
DE1564139A1 (en) 1969-12-18

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