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GB1037909A - Improvements relating to methods of growing semiconductor substances - Google Patents

Improvements relating to methods of growing semiconductor substances

Info

Publication number
GB1037909A
GB1037909A GB30235/65A GB3023565A GB1037909A GB 1037909 A GB1037909 A GB 1037909A GB 30235/65 A GB30235/65 A GB 30235/65A GB 3023565 A GB3023565 A GB 3023565A GB 1037909 A GB1037909 A GB 1037909A
Authority
GB
United Kingdom
Prior art keywords
methods
solvent
improvements relating
growing semiconductor
semiconductor substances
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30235/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1037909A publication Critical patent/GB1037909A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A water 1 (Fig. not shown) is recrystallized epitaxially on a seed 2 by the diagonal passage of a solution zone in direction of arrow 4 through wafer 1 from particles 3 of solid solvent in contact with wafer 1 and seed 2, passage of the molten zone being effected by means of a temperature gradient. The material to be crystallized may be of silicon carbide, boron nitride, boron phosphide, aluminium nitride, or aluminium phosphide. The solvent may be chromium. The material to be crystallized or the solvent may contain a doping agent.
GB30235/65A 1964-07-25 1965-07-16 Improvements relating to methods of growing semiconductor substances Expired GB1037909A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEJ26270A DE1280819B (en) 1964-07-25 1964-07-25 Process for growing crystals made of SiC, BN, BP, AlN or AIP on a seed crystal

Publications (1)

Publication Number Publication Date
GB1037909A true GB1037909A (en) 1966-08-03

Family

ID=7202541

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30235/65A Expired GB1037909A (en) 1964-07-25 1965-07-16 Improvements relating to methods of growing semiconductor substances

Country Status (2)

Country Link
DE (1) DE1280819B (en)
GB (1) GB1037909A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2153252A (en) * 1984-01-27 1985-08-21 Sony Corp Single-crystal semiconductor devices and method for making them
GB2153253A (en) * 1984-01-27 1985-08-21 Sony Corp Semiconductor device and process for making it

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2153252A (en) * 1984-01-27 1985-08-21 Sony Corp Single-crystal semiconductor devices and method for making them
GB2153253A (en) * 1984-01-27 1985-08-21 Sony Corp Semiconductor device and process for making it
US4564403A (en) * 1984-01-27 1986-01-14 Sony Corporation Research Center Single-crystal semiconductor devices and method for making them

Also Published As

Publication number Publication date
DE1280819B (en) 1968-10-24

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