GB1036293A - Improvements in or relating to the manufacture of semiconductor devices - Google Patents
Improvements in or relating to the manufacture of semiconductor devicesInfo
- Publication number
- GB1036293A GB1036293A GB27563/64A GB2756364A GB1036293A GB 1036293 A GB1036293 A GB 1036293A GB 27563/64 A GB27563/64 A GB 27563/64A GB 2756364 A GB2756364 A GB 2756364A GB 1036293 A GB1036293 A GB 1036293A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- manufacture
- july
- outermost layer
- relating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 230000003628 erosive effect Effects 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003252 repetitive effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Abstract
1,036,293. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. July 2, 1965 [July 3, 1964], No. 27563/64. Heading H1K. A semi-conductor device is made from a body including two or more superimposed uniform layers, of which at least one is of semi-conductive material, by a method which includes the step of removing material over one or more areas of a surface of the body, to at least the total depth of the outermost layer, by the erosive action of a repetitive electrical spark discharge between the body and an electrode near the relevant surface, to form one or more isolated regions in the material of at least the outermost layer. The Speecification describes in particular the manufacture of an integrated circuit including a transistor, Figs. 1 and 2 (not shown), and of a field-effect transistor, Figs. 3 and 4 (not shown).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB27563/64A GB1036293A (en) | 1964-07-03 | 1964-07-03 | Improvements in or relating to the manufacture of semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB27563/64A GB1036293A (en) | 1964-07-03 | 1964-07-03 | Improvements in or relating to the manufacture of semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1036293A true GB1036293A (en) | 1966-07-20 |
Family
ID=10261658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB27563/64A Expired GB1036293A (en) | 1964-07-03 | 1964-07-03 | Improvements in or relating to the manufacture of semiconductor devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1036293A (en) |
-
1964
- 1964-07-03 GB GB27563/64A patent/GB1036293A/en not_active Expired
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