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GB1033975A - Improvements in or relating to the growth of single crystals of divalent metal ion tungstates - Google Patents

Improvements in or relating to the growth of single crystals of divalent metal ion tungstates

Info

Publication number
GB1033975A
GB1033975A GB17308/63A GB1730863A GB1033975A GB 1033975 A GB1033975 A GB 1033975A GB 17308/63 A GB17308/63 A GB 17308/63A GB 1730863 A GB1730863 A GB 1730863A GB 1033975 A GB1033975 A GB 1033975A
Authority
GB
United Kingdom
Prior art keywords
trivalent
rare earth
tungstates
earth metal
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB17308/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1033975A publication Critical patent/GB1033975A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7708—Vanadates; Chromates; Molybdates; Tungstates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1675—Solid materials characterised by a crystal matrix titanate, germanate, molybdate, tungstate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/918—Single-crystal waveguide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

In pulling from a melt a single crystal of calcium, strontium or barium tungstate containing 0.01-15 atom per cent of trivalent rare earth metal ions, the melt contains at least 1.5 sodium, potassium or lithium ions per trivalent ion and up to 30 atom per cent thereof (based on divalent ions). The rare earth metal may be neodymium, cerium or thulium. The mono-, di-, and trivalent metal tungstates may be formed by the reaction of oxide, nitrate or carbonate with tungstic acid anhydride.ALSO:In pulling from a melt a single crystal of calcium, strontium or barium tungstate containing 0.01-15 atom per cent of trivalent rare earth metal ions, the melt contains at least 1.5 sodium, potassium or lithium ions per trivalent ion and up to 30 atom per cent thereof (based on divalent ions). The rare earth metal may be neodymium, cerium or thulium. The mono-di-, and tri-valent metal tungstates may be formed by the reaction of oxide, nitrate or carbonate with tungstic acid anhydride. The metal temperature may be 1525-1625 DEG C. The crucible may be of rhodium or iridium. The crystal may be pulled at 0.5 in/hr and rotated at 60 rpm. Pulling may be in an inert or oxygen-containing atmos.
GB17308/63A 1962-05-07 1963-05-02 Improvements in or relating to the growth of single crystals of divalent metal ion tungstates Expired GB1033975A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US192723A US3257327A (en) 1962-05-07 1962-05-07 Process for growing neodymium doped single crystal divalent metal ion tungstates

Publications (1)

Publication Number Publication Date
GB1033975A true GB1033975A (en) 1966-06-22

Family

ID=22710802

Family Applications (1)

Application Number Title Priority Date Filing Date
GB17308/63A Expired GB1033975A (en) 1962-05-07 1963-05-02 Improvements in or relating to the growth of single crystals of divalent metal ion tungstates

Country Status (5)

Country Link
US (1) US3257327A (en)
BE (1) BE631924A (en)
DE (1) DE1276012B (en)
GB (1) GB1033975A (en)
NL (1) NL292372A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE635034A (en) * 1962-08-10
GB1082561A (en) * 1964-02-26 1967-09-06 Rca Corp Phosphor and method of preparation thereof
US3427566A (en) * 1964-03-02 1969-02-11 Union Carbide Corp Solid state laser device using gadolinium oxide as the host material
US3375464A (en) * 1964-05-14 1968-03-26 Du Pont Single-phase, solid solution luminescent compositions, preparation thereof and lasers containing same
US3374444A (en) * 1964-10-21 1968-03-19 Du Pont Vacancy compensated calcium neodymium vanadate phosphors
US3515675A (en) * 1966-12-27 1970-06-02 Lockheed Aircraft Corp Method for making luminescent materials
US3488292A (en) * 1967-02-16 1970-01-06 Westinghouse Electric Corp Alkaline-earth metal pyrophosphate phosphors
US3502590A (en) * 1967-03-01 1970-03-24 Rca Corp Process for preparing phosphor
US9270084B2 (en) 2011-06-28 2016-02-23 Ocean's King Lighting Science & Technology Co., Ltd. Cerium doped magnesium barium tungstate luminescent thin film, manufacturing method and application thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2954300A (en) * 1958-10-31 1960-09-27 Ibm Method of preparation of single crystal ferroelectrics
US3003112A (en) * 1959-05-25 1961-10-03 Bell Telephone Labor Inc Process for growing and apparatus for utilizing paramagnetic crystals
US3053635A (en) * 1960-09-26 1962-09-11 Clevite Corp Method of growing silicon carbide crystals

Also Published As

Publication number Publication date
BE631924A (en) 1900-01-01
DE1276012B (en) 1968-08-29
US3257327A (en) 1966-06-21
NL292372A (en) 1900-01-01

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