GB1031043A - Improvements in or relating to semi-conductor devices - Google Patents
Improvements in or relating to semi-conductor devicesInfo
- Publication number
- GB1031043A GB1031043A GB6852/63A GB685263A GB1031043A GB 1031043 A GB1031043 A GB 1031043A GB 6852/63 A GB6852/63 A GB 6852/63A GB 685263 A GB685263 A GB 685263A GB 1031043 A GB1031043 A GB 1031043A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- semi
- conductivity type
- conductivity
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000007423 decrease Effects 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 229910001651 emery Inorganic materials 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 239000011253 protective coating Substances 0.000 abstract 1
- 238000005488 sandblasting Methods 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
1,031,043. Semi-conductor devices. DES ATELIERS DE SECHERON. S.A. Feb. 20, 1963 [Feb. 20, 1962], No. 6852/63. Heading H1K. In semi-conductor devices, at a junction between a layer of one conductivity type and a more highly doped layer of different conductivity type, the surface of the layer of lower conductivity is shaped so that this layer decreases in cross-sectional area in a direction away from the junction. This is to reduce the tangential electric field at the surface of the body. The surface of the layer of higher conductivity may also be shaped. Various forms which the surface of the layers may take are described. Reference is made to devices in which a layer of one conductivity type is sandwiched between two more highly conductive layers of the opposite or different conductivity type. The low conductivity layer is shaped so that its cross-sectional area initially decreases in the direction away from both junctions. This construction is used in the only complete embodiment-a silicon PvPN controlled-rectifier. Shaping may be effected by methods including jet etching, jet etching in which abrasive particles are included in the etchant, sand blasting, and grinding with emery wheels. The devices may be provided with protective coatings, especially over the layers of lower conductivity. Suitable materials include silicone laquers or silica. The Specification states that in some cases the semi-conductor body may be metallized or coated with graphite in regions of greatest tangential field intensity, i.e. at reverse biased junctions. Reference has been directed by the Comptroller to Specification 968,105.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH202162A CH414866A (en) | 1962-02-20 | 1962-02-20 | Rectifier element made up of p- and n-layers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1031043A true GB1031043A (en) | 1966-05-25 |
Family
ID=4224045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6852/63A Expired GB1031043A (en) | 1962-02-20 | 1963-02-20 | Improvements in or relating to semi-conductor devices |
Country Status (6)
| Country | Link |
|---|---|
| AT (1) | AT255569B (en) |
| BE (1) | BE628619A (en) |
| CH (1) | CH414866A (en) |
| DE (2) | DE1789155B1 (en) |
| FR (1) | FR1360744A (en) |
| GB (1) | GB1031043A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1589529A1 (en) * | 1967-06-19 | 1970-04-09 | Bosch Gmbh Robert | Planar transistor |
| US4110780A (en) * | 1973-07-06 | 1978-08-29 | Bbc Brown Boveri & Company, Limited | Semiconductor power component |
| EP4109495A1 (en) * | 2021-06-23 | 2022-12-28 | Infineon Technologies Bipolar GmbH & Co. KG | Method and device for forming an edge structure of a semiconductor component |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6603372A (en) * | 1965-03-25 | 1966-09-26 | ||
| DE2340107A1 (en) * | 1973-07-06 | 1975-01-23 | Bbc Brown Boveri & Cie | POWER SEMICONDUCTOR COMPONENT |
| CH566643A5 (en) * | 1973-10-11 | 1975-09-15 | Bbc Brown Boveri & Cie | |
| DE2358937C3 (en) * | 1973-11-27 | 1976-07-15 | Licentia Gmbh | THYRISTOR FOR HIGH VOLTAGE IN THE KILOVOLT RANGE |
-
0
- BE BE628619D patent/BE628619A/xx unknown
-
1962
- 1962-02-20 CH CH202162A patent/CH414866A/en unknown
-
1963
- 1963-02-18 DE DE19631789155 patent/DE1789155B1/en not_active Ceased
- 1963-02-18 AT AT123263A patent/AT255569B/en active
- 1963-02-18 DE DE1439215A patent/DE1439215B2/en active Granted
- 1963-02-20 GB GB6852/63A patent/GB1031043A/en not_active Expired
- 1963-02-20 FR FR925466A patent/FR1360744A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1589529A1 (en) * | 1967-06-19 | 1970-04-09 | Bosch Gmbh Robert | Planar transistor |
| US4110780A (en) * | 1973-07-06 | 1978-08-29 | Bbc Brown Boveri & Company, Limited | Semiconductor power component |
| EP4109495A1 (en) * | 2021-06-23 | 2022-12-28 | Infineon Technologies Bipolar GmbH & Co. KG | Method and device for forming an edge structure of a semiconductor component |
Also Published As
| Publication number | Publication date |
|---|---|
| BE628619A (en) | |
| DE1439215B2 (en) | 1973-10-18 |
| FR1360744A (en) | 1964-05-15 |
| DE1789155B1 (en) | 1976-03-11 |
| DE1439215A1 (en) | 1968-10-17 |
| AT255569B (en) | 1967-07-10 |
| CH414866A (en) | 1966-06-15 |
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