GB1017054A - Improvements relating to semi-conductor controllable rectifier devices - Google Patents
Improvements relating to semi-conductor controllable rectifier devicesInfo
- Publication number
- GB1017054A GB1017054A GB29837/61A GB2983761A GB1017054A GB 1017054 A GB1017054 A GB 1017054A GB 29837/61 A GB29837/61 A GB 29837/61A GB 2983761 A GB2983761 A GB 2983761A GB 1017054 A GB1017054 A GB 1017054A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- region
- type
- conductor
- improvements relating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/211—Gated diodes
- H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/645—Combinations of only lateral BJTs
Landscapes
- Thyristors (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE621518D BE621518A (xx) | 1961-08-18 | ||
GB29837/61A GB1017054A (en) | 1961-08-18 | 1961-08-18 | Improvements relating to semi-conductor controllable rectifier devices |
FR907118A FR1331768A (fr) | 1961-08-18 | 1962-08-17 | Dispositif redresseur pouvant ĂȘtre commandĂ© |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB29837/61A GB1017054A (en) | 1961-08-18 | 1961-08-18 | Improvements relating to semi-conductor controllable rectifier devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1017054A true GB1017054A (en) | 1966-01-12 |
Family
ID=10298001
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB29837/61A Expired GB1017054A (en) | 1961-08-18 | 1961-08-18 | Improvements relating to semi-conductor controllable rectifier devices |
Country Status (2)
Country | Link |
---|---|
BE (1) | BE621518A (xx) |
GB (1) | GB1017054A (xx) |
-
0
- BE BE621518D patent/BE621518A/xx unknown
-
1961
- 1961-08-18 GB GB29837/61A patent/GB1017054A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
BE621518A (xx) |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1138237A (en) | Guard junctions for p-n junction semiconductor devices | |
GB1153428A (en) | Improvements in Semiconductor Devices. | |
GB1155578A (en) | Field Effect Transistor | |
GB1152489A (en) | Improvements in and relating to Semiconductor Devices | |
GB995773A (en) | Semi-conductor devices | |
GB1060208A (en) | Avalanche transistor | |
GB983266A (en) | Semiconductor switching devices | |
GB949646A (en) | Improvements in or relating to semiconductor devices | |
GB1134019A (en) | Improvements in semi-conductor devices | |
GB896717A (en) | Semiconductor diode | |
GB1472113A (en) | Semiconductor device circuits | |
GB1073135A (en) | Semiconductor current limiter | |
GB1215539A (en) | Hybrid junction semiconductor device and method of making the same | |
GB1017054A (en) | Improvements relating to semi-conductor controllable rectifier devices | |
GB1180758A (en) | Improvements in or relating to Semiconductor Devices | |
GB1128480A (en) | High voltage semiconductor device with electrical gradient-reducing groove | |
GB1073560A (en) | Improvements in semiconductor devices | |
JPS57128960A (en) | Semiconductor device | |
GB1335037A (en) | Field effect transistor | |
GB1073707A (en) | A pnpn semi-conductor component | |
GB1481184A (en) | Integrated circuits | |
GB1138799A (en) | Avalanche transistor employing depletion layer contour control | |
JPS5793579A (en) | Compound semiconductor device | |
GB1301929A (xx) | ||
GB1015992A (en) | Semiconductor controlled rectifier |