GB1003708A - Improvements in or relating to methods of manufacturing semiconductor devices - Google Patents
Improvements in or relating to methods of manufacturing semiconductor devicesInfo
- Publication number
- GB1003708A GB1003708A GB40593/62A GB4059362A GB1003708A GB 1003708 A GB1003708 A GB 1003708A GB 40593/62 A GB40593/62 A GB 40593/62A GB 4059362 A GB4059362 A GB 4059362A GB 1003708 A GB1003708 A GB 1003708A
- Authority
- GB
- United Kingdom
- Prior art keywords
- alloyed
- junction
- tin
- germanium alloy
- oct
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910000927 Ge alloy Inorganic materials 0.000 abstract 3
- 238000005275 alloying Methods 0.000 abstract 3
- IWTIUUVUEKAHRM-UHFFFAOYSA-N germanium tin Chemical compound [Ge].[Sn] IWTIUUVUEKAHRM-UHFFFAOYSA-N 0.000 abstract 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 229910000830 fernico Inorganic materials 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/70—Tunnel-effect diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,003,708. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. Oct. 26, 1962 [Oct. 31, 1961], No. 40593/62. Heading H1K. A P-N junction exhibiting the tunnelling effect is made from a P-type germanium body to which is alloyed a tin-germanium alloy containing a donor impurity and having a melting temperature less than 500 C. The Specification states that the peak current in the currentvoltage characteristic of such a junction increases rapidly as the alloying temperature decreases, so that a low alloying temperature is advantageous. In the preferred form the P- type material is doped with gallium and is alloyed to a gold-plated fernico electrode. A tin-germanium alloy pellet doped with arsenic is alloyed as described above to the other side of the P-type body and a nickel wire electrode inserted into the molten tin-germanium alloy at a temperature lower than the alloying temperature used to form the P-N junction.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL270874 | 1961-10-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1003708A true GB1003708A (en) | 1965-09-08 |
Family
ID=19753378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB40593/62A Expired GB1003708A (en) | 1961-10-31 | 1962-10-26 | Improvements in or relating to methods of manufacturing semiconductor devices |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE624228A (en) |
| CH (1) | CH400372A (en) |
| DE (1) | DE1214326B (en) |
| GB (1) | GB1003708A (en) |
| NL (1) | NL270874A (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2765245A (en) * | 1952-08-22 | 1956-10-02 | Gen Electric | Method of making p-n junction semiconductor units |
| NL185470B (en) * | 1954-02-27 | Sebim | DEVICE FOR PRESSURE DETECTION AND CONTROL OF A SAFETY VALVE BODY. |
-
0
- NL NL270874D patent/NL270874A/xx unknown
- BE BE624228D patent/BE624228A/xx unknown
-
1962
- 1962-10-26 GB GB40593/62A patent/GB1003708A/en not_active Expired
- 1962-10-27 DE DEN22283A patent/DE1214326B/en active Pending
- 1962-10-29 CH CH1270562A patent/CH400372A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1214326B (en) | 1966-04-14 |
| BE624228A (en) | |
| CH400372A (en) | 1965-10-15 |
| NL270874A (en) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3012175A (en) | Contact for gallium arsenide | |
| GB1107577A (en) | Improvements in semiconductor diodes | |
| GB995773A (en) | Semi-conductor devices | |
| GB849477A (en) | Improvements in or relating to semiconductor control devices | |
| GB1083172A (en) | Semiconductive devices and methods of making them | |
| GB1003708A (en) | Improvements in or relating to methods of manufacturing semiconductor devices | |
| GB896717A (en) | Semiconductor diode | |
| GB1174236A (en) | Negative Resistance Semiconductor Device | |
| GB1155978A (en) | Pressure-Responsive Semiconductor Device. | |
| GB1145075A (en) | Semiconductor device | |
| GB1045478A (en) | Apparatus exhibiting stimulated emission of radiation b | |
| GB1143472A (en) | Improvements in or relating to luminescence diodes | |
| GB912114A (en) | Semiconductor devices | |
| GB789931A (en) | Improvements in devices comprising semi-conductors | |
| GB1193716A (en) | Improvements in and relating to Semiconductor Devices | |
| GB997228A (en) | Semiconductor device and method of producing it | |
| GB1095047A (en) | Semi-conductor devices and the manufacture thereof | |
| GB1008160A (en) | Improvements in or relating to methods of making rectifying contacts to semiconductor bodies | |
| GB998939A (en) | Improvements in and relating to semiconductor devices | |
| GB1004048A (en) | Improvements in and relating to methods of manufacturing semiconductor devices | |
| GB1017423A (en) | Improvements in semiconductor devices | |
| GB1074283A (en) | Improvements in and relating to semiconductor devices | |
| GB985667A (en) | A process for making a semiconductor device | |
| GB969530A (en) | A tunnel diode | |
| US3276925A (en) | Method of producing tunnel diodes by double alloying |