Classifications

• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
  • G01J1/00—Photometry, e.g. photographic exposure meter
  • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
  • G01J1/44—Electric circuits
  • G01J1/46—Electric circuits using a capacitor
• • H—ELECTRICITY
  • H04—ELECTRIC COMMUNICATION TECHNIQUE
  • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
  • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
  • H04N25/50—Control of the SSIS exposure
  • H04N25/57—Control of the dynamic range
  • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
  • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
  • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
  • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/93—Interconnections
  • H10F77/933—Interconnections for devices having potential barriers

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Spectroscopy & Molecular Physics (AREA)
• Multimedia (AREA)
• Signal Processing (AREA)
• Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Priority Applications (3)

Applications Claiming Priority (1)

Publications (1)

Family

ID=41642011

Family Applications (2)

Family Applications After (1)

Country Status (2)

Family Cites Families (4)

• 2009
  • 2009-12-05 GB GBGB0921354.7A patent/GB0921354D0/en not_active Ceased
• 2010
  • 2010-12-03 WO PCT/GB2010/002216 patent/WO2011067566A1/en active Application Filing
  • 2010-12-03 GB GB1209792.9A patent/GB2488082A/en not_active Withdrawn

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