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GB0803709D0 - Wide band-gap nanostructures - Google Patents

Wide band-gap nanostructures

Info

Publication number
GB0803709D0
GB0803709D0 GBGB0803709.5A GB0803709A GB0803709D0 GB 0803709 D0 GB0803709 D0 GB 0803709D0 GB 0803709 A GB0803709 A GB 0803709A GB 0803709 D0 GB0803709 D0 GB 0803709D0
Authority
GB
United Kingdom
Prior art keywords
wide band
nanostructures
gap
gap nanostructures
band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB0803709.5A
Other versions
GB2458442A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dublin City University
Original Assignee
Dublin City University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dublin City University filed Critical Dublin City University
Priority to GB0803709A priority Critical patent/GB2458442A/en
Publication of GB0803709D0 publication Critical patent/GB0803709D0/en
Priority to PCT/EP2009/052417 priority patent/WO2009106636A1/en
Publication of GB2458442A publication Critical patent/GB2458442A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H01L33/24—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
GB0803709A 2008-02-29 2008-02-29 Wide band gap nanostructured devices Withdrawn GB2458442A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0803709A GB2458442A (en) 2008-02-29 2008-02-29 Wide band gap nanostructured devices
PCT/EP2009/052417 WO2009106636A1 (en) 2008-02-29 2009-02-27 Wide band-gap nanostructures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0803709A GB2458442A (en) 2008-02-29 2008-02-29 Wide band gap nanostructured devices

Publications (2)

Publication Number Publication Date
GB0803709D0 true GB0803709D0 (en) 2008-04-09
GB2458442A GB2458442A (en) 2009-09-23

Family

ID=39315662

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0803709A Withdrawn GB2458442A (en) 2008-02-29 2008-02-29 Wide band gap nanostructured devices

Country Status (2)

Country Link
GB (1) GB2458442A (en)
WO (1) WO2009106636A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012035243A1 (en) 2010-09-14 2012-03-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Nanowire-based optoelectronic device for light emission
FR2964796B1 (en) * 2010-09-14 2014-03-21 Commissariat Energie Atomique AN OPTOELECTRONIC DEVICE BASED ON NANOWLAS FOR LIGHT EMISSION
US9447513B2 (en) 2010-10-21 2016-09-20 Hewlett-Packard Development Company, L.P. Nano-scale structures

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100624419B1 (en) * 2004-04-07 2006-09-19 삼성전자주식회사 Nanowire Light Emitting Device and Manufacturing Method Thereof
WO2006060599A2 (en) * 2004-12-02 2006-06-08 The Regents Of The University Of California Semiconductor devices based on coalesced nano-rod arrays
JP2009532851A (en) * 2006-02-16 2009-09-10 ソレクサント・コーポレイション Nanoparticle-sensitized nanostructure solar cell
WO2008048704A2 (en) * 2006-03-10 2008-04-24 Stc.Unm Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices

Also Published As

Publication number Publication date
WO2009106636A1 (en) 2009-09-03
GB2458442A (en) 2009-09-23

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)