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GB0703300D0 - Semiconductor Growth Control Method and Apparatus - Google Patents

Semiconductor Growth Control Method and Apparatus

Info

Publication number
GB0703300D0
GB0703300D0 GBGB0703300.4A GB0703300A GB0703300D0 GB 0703300 D0 GB0703300 D0 GB 0703300D0 GB 0703300 A GB0703300 A GB 0703300A GB 0703300 D0 GB0703300 D0 GB 0703300D0
Authority
GB
United Kingdom
Prior art keywords
control method
growth control
semiconductor growth
semiconductor
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0703300.4A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Optical Reference Systems Ltd
Original Assignee
Optical Reference Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optical Reference Systems Ltd filed Critical Optical Reference Systems Ltd
Priority to GBGB0703300.4A priority Critical patent/GB0703300D0/en
Publication of GB0703300D0 publication Critical patent/GB0703300D0/en
Priority to GB0803189A priority patent/GB2449327B/en
Priority to PCT/GB2008/050119 priority patent/WO2008102179A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
GBGB0703300.4A 2007-02-21 2007-02-21 Semiconductor Growth Control Method and Apparatus Ceased GB0703300D0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GBGB0703300.4A GB0703300D0 (en) 2007-02-21 2007-02-21 Semiconductor Growth Control Method and Apparatus
GB0803189A GB2449327B (en) 2007-02-21 2008-02-21 Semiconductor growth control method and apparatus
PCT/GB2008/050119 WO2008102179A1 (en) 2007-02-21 2008-02-21 Semiconductor growth control method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0703300.4A GB0703300D0 (en) 2007-02-21 2007-02-21 Semiconductor Growth Control Method and Apparatus

Publications (1)

Publication Number Publication Date
GB0703300D0 true GB0703300D0 (en) 2007-03-28

Family

ID=37908968

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB0703300.4A Ceased GB0703300D0 (en) 2007-02-21 2007-02-21 Semiconductor Growth Control Method and Apparatus
GB0803189A Expired - Fee Related GB2449327B (en) 2007-02-21 2008-02-21 Semiconductor growth control method and apparatus

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0803189A Expired - Fee Related GB2449327B (en) 2007-02-21 2008-02-21 Semiconductor growth control method and apparatus

Country Status (2)

Country Link
GB (2) GB0703300D0 (en)
WO (1) WO2008102179A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012012258A2 (en) 2010-07-21 2012-01-26 First Solar, Inc. Temperature-adjusted spectrometer
EP2916103A1 (en) * 2014-03-04 2015-09-09 LayTec AG Method and appararus for real-time analysis of complex thin-film multi-layer growth processes

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4707611A (en) * 1986-12-08 1987-11-17 Rockwell International Corporation Incremental monitoring of thin films
US5354575A (en) * 1993-04-16 1994-10-11 University Of Maryland Ellipsometric approach to anti-reflection coatings of semiconductor laser amplifiers
JPH06349925A (en) * 1993-06-07 1994-12-22 Mitsubishi Electric Corp Epitaxial growth layer evaluation method and process evaluation test pattern structure
ES2263184T3 (en) * 1997-01-27 2006-12-01 Peter D. Haaland METHODS TO REDUCE REFLECTION IN OPTICAL SUBSTRATES.
US7238912B2 (en) * 2003-10-07 2007-07-03 Midwest Research Institute Wafer characteristics via reflectometry and wafer processing apparatus and method
GB0516477D0 (en) * 2005-08-11 2005-09-14 Optical Reference Systems Ltd Apparatus for measuring semiconductor physical characteristics

Also Published As

Publication number Publication date
WO2008102179A1 (en) 2008-08-28
GB0803189D0 (en) 2008-04-02
GB2449327A (en) 2008-11-19
GB2449327B (en) 2009-12-09

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)