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GB0012138D0 - A semiconductor device - Google Patents

A semiconductor device

Info

Publication number
GB0012138D0
GB0012138D0 GBGB0012138.4A GB0012138A GB0012138D0 GB 0012138 D0 GB0012138 D0 GB 0012138D0 GB 0012138 A GB0012138 A GB 0012138A GB 0012138 D0 GB0012138 D0 GB 0012138D0
Authority
GB
United Kingdom
Prior art keywords
trench
region
drain
drain drift
extending
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0012138.4A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Priority to GBGB0012138.4A priority Critical patent/GB0012138D0/en
Publication of GB0012138D0 publication Critical patent/GB0012138D0/en
Priority to JP2001587486A priority patent/JP2003534666A/en
Priority to EP01938146A priority patent/EP1290735B1/en
Priority to AT01938146T priority patent/ATE534145T1/en
Priority to PCT/EP2001/004932 priority patent/WO2001091190A1/en
Priority to US09/860,358 priority patent/US6534823B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
  • Die Bonding (AREA)
  • Thin Film Transistor (AREA)

Abstract

A semiconductor body has source and drain regions (4 and 5; 4' and 5') spaced apart by a body region (6; 6') and a drain drift region (50; 50') and both meeting the same surface (3a) of the semiconductor body. An insulated gate structure (7; 70'; 700) is provided within a trench (80; 80'; 80'') extending in the semiconductor body. The gate structure has a gate conductive region (70b; 70'b; 70''b) separated from the trench by a dielectric layer (70a; 70'a) such that a conduction channel accommodation portion (60; 60') of the body region extends along at least side walls (80a; 80'a; 80''a) of the trench and between the source (4; 4') and drain drift (50; 50') regions. The trench extends from the body region into the drain drift region (50; 50') and the dielectric layer has, at least on side walls (80a; 80'a; 80''a) of the trench, a greater thickness in the portion of the trench extending into the drain drift region (50; 50') than in the remaining portion of the trench so that an extension (71; 71'; 71''; 710) of the gate conductive region extending within the trench through the drain drift region (50; 50') towards the drain region (5; 5') forms a field plate.
GBGB0012138.4A 2000-05-20 2000-05-20 A semiconductor device Ceased GB0012138D0 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GBGB0012138.4A GB0012138D0 (en) 2000-05-20 2000-05-20 A semiconductor device
JP2001587486A JP2003534666A (en) 2000-05-20 2001-05-01 Semiconductor device
EP01938146A EP1290735B1 (en) 2000-05-20 2001-05-01 Semiconductor device
AT01938146T ATE534145T1 (en) 2000-05-20 2001-05-01 SEMICONDUCTOR COMPONENT
PCT/EP2001/004932 WO2001091190A1 (en) 2000-05-20 2001-05-01 A semiconductor device
US09/860,358 US6534823B2 (en) 2000-05-20 2001-05-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0012138.4A GB0012138D0 (en) 2000-05-20 2000-05-20 A semiconductor device

Publications (1)

Publication Number Publication Date
GB0012138D0 true GB0012138D0 (en) 2000-07-12

Family

ID=9891934

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0012138.4A Ceased GB0012138D0 (en) 2000-05-20 2000-05-20 A semiconductor device

Country Status (6)

Country Link
US (1) US6534823B2 (en)
EP (1) EP1290735B1 (en)
JP (1) JP2003534666A (en)
AT (1) ATE534145T1 (en)
GB (1) GB0012138D0 (en)
WO (1) WO2001091190A1 (en)

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Publication number Priority date Publication date Assignee Title
US6555873B2 (en) * 2001-09-07 2003-04-29 Power Integrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
DE10262418B3 (en) * 2002-02-21 2015-10-08 Infineon Technologies Ag MOS transistor means
DE10324754B4 (en) 2003-05-30 2018-11-08 Infineon Technologies Ag Semiconductor device
GB0314392D0 (en) * 2003-06-20 2003-07-23 Koninkl Philips Electronics Nv Trench mos structure
WO2005065144A2 (en) * 2003-12-19 2005-07-21 Third Dimension (3D) Semiconductor, Inc. Planarization method of manufacturing a superjunction device
DE102004041198B4 (en) * 2004-08-25 2016-06-09 Infineon Technologies Austria Ag Lateral semiconductor device with a field electrode and a discharge structure
DE102004064308B3 (en) 2004-08-25 2018-10-31 Infineon Technologies Austria Ag Lateral semiconductor diode with a field electrode and a corner structure
DE102004047772B4 (en) * 2004-09-30 2018-12-13 Infineon Technologies Ag Lateral semiconductor transistor
US7411249B1 (en) * 2004-11-09 2008-08-12 Blanchard Richard A Lateral high-voltage transistor with vertically-extended voltage-equalized drift region
US7560359B2 (en) * 2004-11-26 2009-07-14 Samsung Electronics Co., Ltd. Methods of forming asymmetric recesses and gate structures that fill such recesses and related methods of forming semiconductor devices that include such recesses and gate structures
US8183113B2 (en) * 2005-08-24 2012-05-22 Samsung Electronics Co., Ltd. Methods of forming recessed gate structures including blocking members, and methods of forming semiconductor devices having the recessed gate structures
US7804150B2 (en) * 2006-06-29 2010-09-28 Fairchild Semiconductor Corporation Lateral trench gate FET with direct source-drain current path
CN101828253B (en) * 2007-10-19 2012-03-21 Nxp股份有限公司 Semiconductor device, usage of the same, and device containing the same
JP5280056B2 (en) * 2008-01-10 2013-09-04 シャープ株式会社 MOS field effect transistor
US8004051B2 (en) * 2009-02-06 2011-08-23 Texas Instruments Incorporated Lateral trench MOSFET having a field plate
JP5656608B2 (en) * 2010-12-17 2015-01-21 三菱電機株式会社 Semiconductor device
JP6084357B2 (en) * 2011-11-02 2017-02-22 ルネサスエレクトロニクス株式会社 Semiconductor device
US9799762B2 (en) 2012-12-03 2017-10-24 Infineon Technologies Ag Semiconductor device and method of manufacturing a semiconductor device
WO2015008550A1 (en) * 2013-07-19 2015-01-22 日産自動車株式会社 Semiconductor device, and method for manufacturing same
US9287404B2 (en) 2013-10-02 2016-03-15 Infineon Technologies Austria Ag Semiconductor device and method of manufacturing a semiconductor device with lateral FET cells and field plates
US9306058B2 (en) 2013-10-02 2016-04-05 Infineon Technologies Ag Integrated circuit and method of manufacturing an integrated circuit
US9401399B2 (en) 2013-10-15 2016-07-26 Infineon Technologies Ag Semiconductor device
US9496339B2 (en) * 2014-06-02 2016-11-15 Infineon Technologies Austria Ag Semiconductor device comprising trench structures
DE102015105632B4 (en) * 2015-04-14 2016-09-01 Infineon Technologies Ag SEMICONDUCTOR DEVICE WITH A TRANSISTOR
DE102016113393B4 (en) * 2016-07-20 2024-11-21 Infineon Technologies Ag SEMICONDUCTOR DEVICE CONTAINING A TRANSISTOR ARRAY AND A TERMINATION REGION, SEMICONDUCTOR DEVICE WITH A POWER TRANSISTOR IN A SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SUCH A SEMICONDUCTOR DEVICE
TWI777225B (en) * 2019-08-29 2022-09-11 台灣積體電路製造股份有限公司 Integrated chip and method of forming the same
CN111244160B (en) * 2020-01-17 2022-11-01 中国科学院微电子研究所 MOS device with annular channel region and preparation method thereof
CN117276329A (en) * 2023-11-20 2023-12-22 深圳天狼芯半导体有限公司 LDMOS with trench gate and preparation method

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US4243997A (en) * 1976-03-25 1981-01-06 Tokyo Shibaura Electric Co., Ltd. Semiconductor device
JPS61226966A (en) * 1985-03-30 1986-10-08 Toshiba Corp semiconductor equipment
US4835584A (en) 1986-11-27 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench transistor
US5229633A (en) * 1987-06-08 1993-07-20 U.S. Philips Corporation High voltage lateral enhancement IGFET
US5040034A (en) * 1989-01-18 1991-08-13 Nissan Motor Co., Ltd. Semiconductor device
US5640034A (en) 1992-05-18 1997-06-17 Texas Instruments Incorporated Top-drain trench based resurf DMOS transistor structure
US5434435A (en) * 1994-05-04 1995-07-18 North Carolina State University Trench gate lateral MOSFET
EP1060518A1 (en) * 1998-02-20 2000-12-20 Infineon Technologies AG Trench-gate mos transistor, its use in an eeprom device and process for manufacturing the same
JP3641547B2 (en) * 1998-03-25 2005-04-20 株式会社豊田中央研究所 Semiconductor device including lateral MOS element
GB9906247D0 (en) * 1999-03-18 1999-05-12 Koninkl Philips Electronics Nv An electronic device comprising a trench gate field effect device

Also Published As

Publication number Publication date
WO2001091190A1 (en) 2001-11-29
ATE534145T1 (en) 2011-12-15
JP2003534666A (en) 2003-11-18
US20010045599A1 (en) 2001-11-29
EP1290735A1 (en) 2003-03-12
US6534823B2 (en) 2003-03-18
EP1290735B1 (en) 2011-11-16

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)