FR83100E - bistable recording elements with <tunnel> diodes and non-linear resistors - Google Patents
bistable recording elements with <tunnel> diodes and non-linear resistorsInfo
- Publication number
- FR83100E FR83100E FR925555A FR925555A FR83100E FR 83100 E FR83100 E FR 83100E FR 925555 A FR925555 A FR 925555A FR 925555 A FR925555 A FR 925555A FR 83100 E FR83100 E FR 83100E
- Authority
- FR
- France
- Prior art keywords
- bistable
- tunnel
- diodes
- recording elements
- linear resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
- H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
- G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR925555A FR83100E (en) | 1962-02-03 | 1963-02-21 | bistable recording elements with <tunnel> diodes and non-linear resistors |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEST018823 | 1962-02-03 | ||
DEST18897A DE1170167B (en) | 1962-02-03 | 1962-02-24 | Storage matrix with tunnel diodes |
FR925555A FR83100E (en) | 1962-02-03 | 1963-02-21 | bistable recording elements with <tunnel> diodes and non-linear resistors |
Publications (1)
Publication Number | Publication Date |
---|---|
FR83100E true FR83100E (en) | 1964-06-05 |
Family
ID=27212457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR925555A Expired FR83100E (en) | 1962-02-03 | 1963-02-21 | bistable recording elements with <tunnel> diodes and non-linear resistors |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR83100E (en) |
-
1963
- 1963-02-21 FR FR925555A patent/FR83100E/en not_active Expired
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