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FR3106695B1 - Method for sealing a microelectronic device - Google Patents

Method for sealing a microelectronic device Download PDF

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Publication number
FR3106695B1
FR3106695B1 FR2000799A FR2000799A FR3106695B1 FR 3106695 B1 FR3106695 B1 FR 3106695B1 FR 2000799 A FR2000799 A FR 2000799A FR 2000799 A FR2000799 A FR 2000799A FR 3106695 B1 FR3106695 B1 FR 3106695B1
Authority
FR
France
Prior art keywords
microelectronic device
sealing
formation
series
steps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR2000799A
Other languages
French (fr)
Other versions
FR3106695A1 (en
Inventor
Mohamed Khalifa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tecmoled SAS
Original Assignee
Tecmoled SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tecmoled SAS filed Critical Tecmoled SAS
Priority to FR2000799A priority Critical patent/FR3106695B1/en
Publication of FR3106695A1 publication Critical patent/FR3106695A1/en
Application granted granted Critical
Publication of FR3106695B1 publication Critical patent/FR3106695B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • H10K50/8445Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Titre : procédé pour l’étanchéité d’un dispositif microélectronique L’invention concerne un procédé de fabrication d’un dispositif microélectronique comprenant la formation d’un revêtement d’étanchéité (2, 9) au contact d’une surface d’une partie du dispositif microélectronique, caractérisé en ce que la formation du revêtement d’étanchéité (2, 9) comprend la formation d’un empilement (21, 91) de couches d’oxyde sur la surface par une pluralité d’étapes de dépôt de couche atomique, directement successives, chacune configurée pour former une couche (211, 212 ; 911, 912) à base d’un ou plusieurs oxydes, et en ce qu’une première série d’au moins une étape de la pluralité d’étapes présente une vitesse de dépôt strictement inférieure à celle d’une deuxième série, directement successive à la première série, d’au moins une étape de la pluralité d’étapes. Figure pour l’abrégé : Fig.11Title: method for sealing a microelectronic device The invention relates to a method for manufacturing a microelectronic device comprising the formation of a sealing coating (2, 9) in contact with a surface of a of the microelectronic device, characterized in that the formation of the sealing coating (2, 9) comprises the formation of a stack (21, 91) of oxide layers on the surface by a plurality of layer deposition steps atomic, directly successive, each configured to form a layer (211, 212; 911, 912) based on one or more oxides, and in that a first series of at least one step of the plurality of steps has a deposition rate strictly lower than that of a second series, directly successive to the first series, of at least one step of the plurality of steps. Figure for the abstract: Fig.11

FR2000799A 2020-01-28 2020-01-28 Method for sealing a microelectronic device Expired - Fee Related FR3106695B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR2000799A FR3106695B1 (en) 2020-01-28 2020-01-28 Method for sealing a microelectronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2000799A FR3106695B1 (en) 2020-01-28 2020-01-28 Method for sealing a microelectronic device
FR2000799 2020-01-28

Publications (2)

Publication Number Publication Date
FR3106695A1 FR3106695A1 (en) 2021-07-30
FR3106695B1 true FR3106695B1 (en) 2022-02-25

Family

ID=70295362

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2000799A Expired - Fee Related FR3106695B1 (en) 2020-01-28 2020-01-28 Method for sealing a microelectronic device

Country Status (1)

Country Link
FR (1) FR3106695B1 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5220106B2 (en) * 2007-06-22 2013-06-26 ザ・リージエンツ・オブ・ザ・ユニバーシティ・オブ・コロラド Protective coatings for organic electronic devices manufactured using atomic layer deposition and molecular layer deposition methods

Also Published As

Publication number Publication date
FR3106695A1 (en) 2021-07-30

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Legal Events

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Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20210730

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Effective date: 20240905