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FR3104173B1 - : Procédé de production de nanoclusters de silicium et/ou germanium présentant un moment dipolaire électrique et/ou magnétique permanent - Google Patents

: Procédé de production de nanoclusters de silicium et/ou germanium présentant un moment dipolaire électrique et/ou magnétique permanent Download PDF

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Publication number
FR3104173B1
FR3104173B1 FR1913888A FR1913888A FR3104173B1 FR 3104173 B1 FR3104173 B1 FR 3104173B1 FR 1913888 A FR1913888 A FR 1913888A FR 1913888 A FR1913888 A FR 1913888A FR 3104173 B1 FR3104173 B1 FR 3104173B1
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France
Prior art keywords
ideally
nanoclusters
dipole moment
magnetic dipole
producing silicon
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FR1913888A
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English (en)
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FR3104173A1 (fr
Inventor
Holger Vach
Fatme Jardali
Yvan Bonnassieux
Laifa Boufendi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ECOLE POLYTECH
Centre National de la Recherche Scientifique CNRS
Ecole Polytechnique
Universite d Orleans UFR de Sciences
Original Assignee
ECOLE POLYTECH
Centre National de la Recherche Scientifique CNRS
Ecole Polytechnique
Universite d Orleans UFR de Sciences
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Application filed by ECOLE POLYTECH, Centre National de la Recherche Scientifique CNRS, Ecole Polytechnique, Universite d Orleans UFR de Sciences filed Critical ECOLE POLYTECH
Priority to FR1913888A priority Critical patent/FR3104173B1/fr
Priority to US17/756,758 priority patent/US20230009716A1/en
Priority to EP20817183.5A priority patent/EP4069881A1/fr
Priority to PCT/EP2020/084712 priority patent/WO2021110956A1/fr
Publication of FR3104173A1 publication Critical patent/FR3104173A1/fr
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Publication of FR3104173B1 publication Critical patent/FR3104173B1/fr
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61K—PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K9/00—Medicinal preparations characterised by special physical form
    • A61K9/14—Particulate form, e.g. powders, Processes for size reducing of pure drugs or the resulting products, Pure drug nanoparticles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J21/00—Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
    • B01J21/06—Silicon, titanium, zirconium or hafnium; Oxides or hydroxides thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/14—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of germanium, tin or lead
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J35/00—Catalysts, in general, characterised by their form or physical properties
    • B01J35/20—Catalysts, in general, characterised by their form or physical properties characterised by their non-solid state
    • B01J35/23—Catalysts, in general, characterised by their form or physical properties characterised by their non-solid state in a colloidal state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J35/00—Catalysts, in general, characterised by their form or physical properties
    • B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
    • B01J35/33—Electric or magnetic properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02—Impregnation, coating or precipitation
    • B01J37/0215—Coating
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/42—Magnetic properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Veterinary Medicine (AREA)
  • Public Health (AREA)
  • General Health & Medical Sciences (AREA)
  • Animal Behavior & Ethology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Epidemiology (AREA)
  • Pharmacology & Pharmacy (AREA)
  • Medicinal Chemistry (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Silicon Compounds (AREA)
  • Dispersion Chemistry (AREA)

Abstract

L’invention concerne un procédé de production de nanoclusters de silicium et/ou germanium présentant un moment dipolaire électrique et/ou magnétique permanent au moyen d’un réacteur plasma à couplage capacitif ou inductif avec les paramètres suivants : - une pression comprise entre 0.01mbar et la pression atmosphérique, ou entre 0.05mbar et 5mbar, ou idéalement 0.1mbar, - une décharge en tension continue, radiofréquence ou microonde à 13.56 MHz ou 2.45GHz ou leurs harmoniques, - une puissance d’excitation comprise entre 0.01 mW/cm3 et 20 mW/cm3, idéalement entre 0.1 mW/cm3 et 5 mW/cm3, - une température de gaz entre la température ambiante et 350 °C, ou entre 50°C et 150°C, idéalement à 120°C, - une durée entre le début de génération et la fin de génération d’un plasma dans le réacteur comprise entre 0.01 seconde et 20 secondes, ou entre 0.1 seconde et 10 secondes, idéalement 2 secondes, - les nanoclusters sont déposés sous l'effet d'une tension électrique DC comprise entre 0V et 1000V, préférablement autour de 200V. Figure pour l’abrégé : Fig. 1
FR1913888A 2019-12-06 2019-12-06 : Procédé de production de nanoclusters de silicium et/ou germanium présentant un moment dipolaire électrique et/ou magnétique permanent Active FR3104173B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1913888A FR3104173B1 (fr) 2019-12-06 2019-12-06 : Procédé de production de nanoclusters de silicium et/ou germanium présentant un moment dipolaire électrique et/ou magnétique permanent
US17/756,758 US20230009716A1 (en) 2019-12-06 2020-12-04 Process for producing nanoclusters of silicon and/or germanium exhibiting a permanent magnetic and/or electric dipole moment
EP20817183.5A EP4069881A1 (fr) 2019-12-06 2020-12-04 Procede de production de nanoclusters de silicium et/ou germanium presentant un moment dipolaire electrique et/ou magnetique permanent
PCT/EP2020/084712 WO2021110956A1 (fr) 2019-12-06 2020-12-04 Procede de production de nanoclusters de silicium et/ou germanium presentant un moment dipolaire electrique et/ou magnetique permanent

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1913888A FR3104173B1 (fr) 2019-12-06 2019-12-06 : Procédé de production de nanoclusters de silicium et/ou germanium présentant un moment dipolaire électrique et/ou magnétique permanent
FR1913888 2019-12-06

Publications (2)

Publication Number Publication Date
FR3104173A1 FR3104173A1 (fr) 2021-06-11
FR3104173B1 true FR3104173B1 (fr) 2023-07-21

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FR1913888A Active FR3104173B1 (fr) 2019-12-06 2019-12-06 : Procédé de production de nanoclusters de silicium et/ou germanium présentant un moment dipolaire électrique et/ou magnétique permanent

Country Status (4)

Country Link
US (1) US20230009716A1 (fr)
EP (1) EP4069881A1 (fr)
FR (1) FR3104173B1 (fr)
WO (1) WO2021110956A1 (fr)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001014250A2 (fr) 1999-08-23 2001-03-01 University Of Hawaii Synthese de nanoparticules de silicium, nanoparticules de silicium a centre metallique, et applications associees
JP4863335B2 (ja) * 2000-07-12 2012-01-25 独立行政法人科学技術振興機構 シリコンおよびゲルマニウムクラスレート化合物およびその製造方法
EP2298968A3 (fr) * 2000-08-22 2011-10-05 President and Fellows of Harvard College Procédé pour la croissance des nano-fils
US7071086B2 (en) 2003-04-23 2006-07-04 Advanced Micro Devices, Inc. Method of forming a metal gate structure with tuning of work function by silicon incorporation
FR2928939B1 (fr) * 2008-03-20 2010-04-30 Ecole Polytech Procede de production de nanostructures sur un substrat d'oxyde metallique, procede de depot de couches minces sur un tel substrat, et un dispositf forme de couches minces
FR2937055B1 (fr) * 2008-10-09 2011-04-22 Ecole Polytech Procede de fabrication a basse temperature de nanofils semiconducteurs a croissance laterale et transistors a base de nanofils, obtenus par ce procede
FR2955201B1 (fr) 2010-01-13 2012-04-13 Centre Nat Rech Scient Utilisation de nanotubes de silicium hautement coordines a titre de materiaux semi-conducteur pour des applications optoelectroniques
FR2955206B1 (fr) 2010-01-13 2012-02-17 Centre Nat Rech Scient Utilisation de nanostructures a base de nanotubes de silicium hautement coordines a titre d'elements conducteurs electriques
FR2955097B1 (fr) 2010-01-13 2012-04-13 Centre Nat Rech Scient Utilisation de nanotubes de silicium comprenant au moins un atome de remplissage libre a titre de nano-oscillateur electromecanique
JP5635803B2 (ja) * 2010-05-07 2014-12-03 トランスフォーム・ジャパン株式会社 化合物半導体装置の製造方法及び化合物半導体装置
KR20140020957A (ko) 2011-03-04 2014-02-19 캄브리오스 테크놀로지즈 코포레이션 금속 나노구조체-기반 투명 전도체의 일함수를 조절하는 방법
CA2841087A1 (fr) 2011-07-08 2013-01-17 The Governors Of The University Of Alberta Procedes d'adaptation aux besoins de fonction de travail d'electrode a l'aide d'elements de modification interfaciaux destines a etre utilises dans des circuits electroniques orga niques
US9601579B2 (en) * 2013-05-24 2017-03-21 The University Of North Carolina At Charlotte Growth of semiconductors on hetero-substrates using graphene as an interfacial layer
FR3078345A1 (fr) * 2018-02-27 2019-08-30 Centre National De La Recherche Scientifique Nanofilaments d'alliage de gesn, preparation et applications

Also Published As

Publication number Publication date
US20230009716A1 (en) 2023-01-12
EP4069881A1 (fr) 2022-10-12
WO2021110956A1 (fr) 2021-06-10
FR3104173A1 (fr) 2021-06-11

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