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FR3101156B1 - Empilement magnétorésistif sans champ rayonné, capteur et système de cartographie magnétique comprenant un tel empilement - Google Patents

Empilement magnétorésistif sans champ rayonné, capteur et système de cartographie magnétique comprenant un tel empilement Download PDF

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Publication number
FR3101156B1
FR3101156B1 FR1910317A FR1910317A FR3101156B1 FR 3101156 B1 FR3101156 B1 FR 3101156B1 FR 1910317 A FR1910317 A FR 1910317A FR 1910317 A FR1910317 A FR 1910317A FR 3101156 B1 FR3101156 B1 FR 3101156B1
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FR
France
Prior art keywords
layer
magnetic
stack
coupling
antiferromagnetic
Prior art date
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Active
Application number
FR1910317A
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English (en)
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FR3101156A1 (fr
Inventor
Claude Fermon
Aurélie Solignac
Myriam Pannetier-Lecoeur
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1910317A priority Critical patent/FR3101156B1/fr
Priority to EP20772061.6A priority patent/EP4031888A1/fr
Priority to US17/762,233 priority patent/US20220384715A1/en
Priority to PCT/EP2020/075896 priority patent/WO2021053033A1/fr
Publication of FR3101156A1 publication Critical patent/FR3101156A1/fr
Application granted granted Critical
Publication of FR3101156B1 publication Critical patent/FR3101156B1/fr
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/50—MFM [Magnetic Force Microscopy] or apparatus therefor, e.g. MFM probes
    • G01Q60/54—Probes, their manufacture, or their related instrumentation, e.g. holders
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
    • G01R33/1215—Measuring magnetisation; Particular magnetometers therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
    • G01R33/16—Measuring susceptibility
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
    • G01R33/14—Measuring or plotting hysteresis curves

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Magnetic Heads (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)

Abstract

TITRE : Empilement magnétorésistif sans champ rayonné, capteur et système de cartographie magnétique comprenant un tel empilement Un aspect de l’invention concerne un empilement magnétorésistif (1) comprenant : Une couche de référence (2) comprenant : Une couche magnétique (21), Une couche antiferromagnétique (24) en couplage d’échange avec la couche magnétique (21), Une couche magnétique (22) sensiblement de même aimantation que la couche magnétique (21), Une couche espaceur (23) entre les couches magnétiques (21, 22) d’épaisseur permettant un couplage antiferromagnétique entre les couches magnétiques (21, 22) d’une première intensité de couplage, Une couche libre (3) de coercivité inférieure à 10 microTesla, la couche libre (3) comprenant : Une couche magnétique (32), Une couche antiferromagnétique (34) en couplage d’échange avec la couche magnétique (32), Une couche magnétique (31) sensiblement de même aimantation que la couche magnétique (32), Une couche espaceur (33) entre les couches magnétiques (31, 32) d’épaisseur permettant un couplage antiferromagnétique entre les couches magnétiques d’une deuxième intensité de couplage inférieure à la première intensité de couplage, Une troisième couche espaceur (4) séparant la couche de référence (2) et la couche libre (3). Figure à publier avec l’abrégé : Figure 2
FR1910317A 2019-09-19 2019-09-19 Empilement magnétorésistif sans champ rayonné, capteur et système de cartographie magnétique comprenant un tel empilement Active FR3101156B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1910317A FR3101156B1 (fr) 2019-09-19 2019-09-19 Empilement magnétorésistif sans champ rayonné, capteur et système de cartographie magnétique comprenant un tel empilement
EP20772061.6A EP4031888A1 (fr) 2019-09-19 2020-09-16 Empilement magnétorésistif sans champ rayonné, capteur et système de cartographie magnétique comprenant un tel empilement
US17/762,233 US20220384715A1 (en) 2019-09-19 2020-09-16 Magnetoresistive stack without radiated field, sensor and magnetic mapping system comprising such a stack
PCT/EP2020/075896 WO2021053033A1 (fr) 2019-09-19 2020-09-16 Empilement magnétorésistif sans champ rayonné, capteur et système de cartographie magnétique comprenant un tel empilement

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1910317 2019-09-19
FR1910317A FR3101156B1 (fr) 2019-09-19 2019-09-19 Empilement magnétorésistif sans champ rayonné, capteur et système de cartographie magnétique comprenant un tel empilement

Publications (2)

Publication Number Publication Date
FR3101156A1 FR3101156A1 (fr) 2021-03-26
FR3101156B1 true FR3101156B1 (fr) 2021-10-15

Family

ID=69190900

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1910317A Active FR3101156B1 (fr) 2019-09-19 2019-09-19 Empilement magnétorésistif sans champ rayonné, capteur et système de cartographie magnétique comprenant un tel empilement

Country Status (4)

Country Link
US (1) US20220384715A1 (fr)
EP (1) EP4031888A1 (fr)
FR (1) FR3101156B1 (fr)
WO (1) WO2021053033A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025024607A1 (fr) * 2023-07-24 2025-01-30 SeeQC, Inc. Capteurs magnétiques nanométriques supraconducteurs et applications comme l'informatique quantique

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1019907A (ja) * 1996-07-04 1998-01-23 Canon Inc 微小探針の製造方法と微小探針、その微小探針を用いたプローブの製造方法とプローブ、及びそれを用いた磁気顕微鏡
JP3559158B2 (ja) * 1998-02-06 2004-08-25 株式会社リコー 近磁界プローブによる電磁ノイズ測定装置及び電磁ノイズ測定方法
US7324313B2 (en) * 2004-09-30 2008-01-29 Hitachi Global Storage Technologies Netherlands B.V. Read sensor having an in-stack biasing structure and an AP coupled free layer structure for increased magnetic stability
JP2007142257A (ja) * 2005-11-21 2007-06-07 Alps Electric Co Ltd 磁気検出素子
EP2060875B1 (fr) * 2006-09-12 2019-11-06 Asahi Kasei Microdevices Corporation Appareil de mesure de quantite physique et procede de traitement de signaux de celui-ci
US20110061139A1 (en) * 2009-09-04 2011-03-10 Ahmet Oral Method to measure 3 component of the magnetic field vector at nanometer resolution using scanning hall probe microscopy
WO2016081833A2 (fr) * 2014-11-20 2016-05-26 The Trustees Of Dartmouth College Système et procédé pour l'évaluation magnétique de réserves de fer dans l'organisme
US9529060B2 (en) 2014-01-09 2016-12-27 Allegro Microsystems, Llc Magnetoresistance element with improved response to magnetic fields
WO2016196157A1 (fr) 2015-06-05 2016-12-08 Allegro Microsystems, Llc Élément de magnétorésistance à vanne de spin à réponse améliorée aux champs magnétiques
US10777345B2 (en) * 2018-02-21 2020-09-15 Allegro Microsystems, Llc Spin valve with bias alignment

Also Published As

Publication number Publication date
EP4031888A1 (fr) 2022-07-27
FR3101156A1 (fr) 2021-03-26
US20220384715A1 (en) 2022-12-01
WO2021053033A1 (fr) 2021-03-25
WO2021053033A9 (fr) 2021-05-14

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