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FR3095894B1 - Sélecteur de mémoire - Google Patents

Sélecteur de mémoire Download PDF

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Publication number
FR3095894B1
FR3095894B1 FR1904900A FR1904900A FR3095894B1 FR 3095894 B1 FR3095894 B1 FR 3095894B1 FR 1904900 A FR1904900 A FR 1904900A FR 1904900 A FR1904900 A FR 1904900A FR 3095894 B1 FR3095894 B1 FR 3095894B1
Authority
FR
France
Prior art keywords
selector
memory selector
memory cell
memory
tellurium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1904900A
Other languages
English (en)
Other versions
FR3095894A1 (fr
Inventor
Anthonin Verdy
Gilbert Sassine
Gabriel Molas
Gabriele Navarro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1904900A priority Critical patent/FR3095894B1/fr
Priority to PCT/FR2020/050741 priority patent/WO2020229752A1/fr
Priority to US17/609,862 priority patent/US20220231225A1/en
Priority to CN202080049852.3A priority patent/CN114072929A/zh
Priority to EP20731925.2A priority patent/EP3966874A1/fr
Publication of FR3095894A1 publication Critical patent/FR3095894A1/fr
Application granted granted Critical
Publication of FR3095894B1 publication Critical patent/FR3095894B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)

Abstract

Sélecteur de mémoire La présente description concerne un sélecteur (33) pour cellule mémoire (3), destiné à passer d’un état résistif à un état conducteur de manière à respectivement interdire ou autoriser un accès à la cellule mémoire, caractérisé en ce qu’il est constitué d’un alliage constitué de germanium, de sélénium, d’arsenic et de tellure. Figure pour l'abrégé : Fig. 1
FR1904900A 2019-05-10 2019-05-10 Sélecteur de mémoire Active FR3095894B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1904900A FR3095894B1 (fr) 2019-05-10 2019-05-10 Sélecteur de mémoire
PCT/FR2020/050741 WO2020229752A1 (fr) 2019-05-10 2020-05-04 Selecteur de memoire
US17/609,862 US20220231225A1 (en) 2019-05-10 2020-05-04 Memory selector
CN202080049852.3A CN114072929A (zh) 2019-05-10 2020-05-04 存储器选择器
EP20731925.2A EP3966874A1 (fr) 2019-05-10 2020-05-04 Selecteur de memoire

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1904900A FR3095894B1 (fr) 2019-05-10 2019-05-10 Sélecteur de mémoire
FR1904900 2019-05-10

Publications (2)

Publication Number Publication Date
FR3095894A1 FR3095894A1 (fr) 2020-11-13
FR3095894B1 true FR3095894B1 (fr) 2022-05-20

Family

ID=68138288

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1904900A Active FR3095894B1 (fr) 2019-05-10 2019-05-10 Sélecteur de mémoire

Country Status (5)

Country Link
US (1) US20220231225A1 (fr)
EP (1) EP3966874A1 (fr)
CN (1) CN114072929A (fr)
FR (1) FR3095894B1 (fr)
WO (1) WO2020229752A1 (fr)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940487A (fr) * 1972-08-22 1974-04-16
US5694146A (en) * 1994-10-14 1997-12-02 Energy Conversion Devices, Inc. Active matrix LCD array employing thin film chalcogenide threshold switches to isolate individual pixels
US6990017B1 (en) * 2004-06-30 2006-01-24 Intel Corporation Accessing phase change memories
KR101338160B1 (ko) * 2007-07-06 2013-12-06 삼성전자주식회사 상변화 기억 소자 및 그 형성 방법
KR102453349B1 (ko) * 2016-02-25 2022-10-07 삼성전자주식회사 가변 저항 메모리 장치 및 이의 제조 방법
KR102403733B1 (ko) * 2017-12-01 2022-05-30 삼성전자주식회사 메모리 소자
JP2019161179A (ja) * 2018-03-16 2019-09-19 東芝メモリ株式会社 磁気記憶装置
KR102734543B1 (ko) * 2018-10-04 2024-11-28 삼성전자주식회사 가변 저항 메모리 소자 및 이의 제조 방법

Also Published As

Publication number Publication date
US20220231225A1 (en) 2022-07-21
EP3966874A1 (fr) 2022-03-16
WO2020229752A1 (fr) 2020-11-19
FR3095894A1 (fr) 2020-11-13
CN114072929A (zh) 2022-02-18

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