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FR3081155B1 - Procede de fabrication d'un composant electronique a multiples ilots quantiques - Google Patents

Procede de fabrication d'un composant electronique a multiples ilots quantiques Download PDF

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Publication number
FR3081155B1
FR3081155B1 FR1854109A FR1854109A FR3081155B1 FR 3081155 B1 FR3081155 B1 FR 3081155B1 FR 1854109 A FR1854109 A FR 1854109A FR 1854109 A FR1854109 A FR 1854109A FR 3081155 B1 FR3081155 B1 FR 3081155B1
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FR
France
Prior art keywords
main control
control gates
electronic component
multiple quantum
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1854109A
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English (en)
Other versions
FR3081155A1 (fr
Inventor
Louis Hutin
Sylvain Barraud
Benoit Bertrand
Maud Vinet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1854109A priority Critical patent/FR3081155B1/fr
Priority to US16/413,652 priority patent/US11088259B2/en
Publication of FR3081155A1 publication Critical patent/FR3081155A1/fr
Application granted granted Critical
Publication of FR3081155B1 publication Critical patent/FR3081155B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/383—Quantum effect devices, e.g. of devices using quantum reflection, diffraction or interference effects
    • H10D48/3835—Semiconductor qubit devices comprising a plurality of quantum mechanically interacting semiconductor quantum dots, e.g. Loss-DiVincenzo spin qubits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/385—Devices using spin-polarised carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L’invention concerne un procédé de fabrication d’un composant électronique (1) à multiples îlots quantiques, comprenant les étapes de : -fourniture d’un substrat (100) surmonté d’un nanofil (111) en matériau semi-conducteur non intentionnellement dopé, surmonté par au moins deux grilles de commande principales (112) de façon à former des qubits respectifs sous ces grilles de commande principales, lesdites deux grilles de commande principales étant séparées par une gorge (114), le sommet et les faces latérales des deux grilles de commande principales et le fond de la gorge étant recouverts par une couche de diélectrique (106) ; -dépôt d’un matériau conducteur : -dans ladite gorge (122) ; et -sur le sommet des deux grilles de commande principales ; -planarisation jusqu’à ladite couche de diélectrique au sommet des deux grilles de commande principales (112), de façon à obtenir un élément en matériau conducteur (122) auto-aligné entre lesdites grilles de commande principales. Figure à publier avec l’abrégé : Fig. 37
FR1854109A 2018-05-17 2018-05-17 Procede de fabrication d'un composant electronique a multiples ilots quantiques Active FR3081155B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1854109A FR3081155B1 (fr) 2018-05-17 2018-05-17 Procede de fabrication d'un composant electronique a multiples ilots quantiques
US16/413,652 US11088259B2 (en) 2018-05-17 2019-05-16 Method of manufacturing an electronic component including multiple quantum dots

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1854109 2018-05-17
FR1854109A FR3081155B1 (fr) 2018-05-17 2018-05-17 Procede de fabrication d'un composant electronique a multiples ilots quantiques

Publications (2)

Publication Number Publication Date
FR3081155A1 FR3081155A1 (fr) 2019-11-22
FR3081155B1 true FR3081155B1 (fr) 2021-10-22

Family

ID=63834090

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1854109A Active FR3081155B1 (fr) 2018-05-17 2018-05-17 Procede de fabrication d'un composant electronique a multiples ilots quantiques

Country Status (2)

Country Link
US (1) US11088259B2 (fr)
FR (1) FR3081155B1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3081155B1 (fr) * 2018-05-17 2021-10-22 Commissariat Energie Atomique Procede de fabrication d'un composant electronique a multiples ilots quantiques
US11417765B2 (en) * 2018-06-25 2022-08-16 Intel Corporation Quantum dot devices with fine-pitched gates
EP3841534A4 (fr) * 2018-08-23 2022-06-08 The University of Melbourne Réseaux d'ordinateurs quantiques
US11107966B2 (en) * 2019-11-11 2021-08-31 International Business Machines Corporation Two-sided Majorana fermion quantum computing devices fabricated with ion implant methods
US11107965B2 (en) * 2019-11-11 2021-08-31 International Business Machines Corporation Majorana fermion quantum computing devices fabricated with ion implant methods
FR3119044B1 (fr) * 2021-01-18 2024-04-05 Commissariat Energie Atomique Procédé de fabrication de grilles d’échange auto-alignées et dispositif semi-conducteur associé
FR3120740A1 (fr) * 2021-03-15 2022-09-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif à deux niveaux de grilles de commande électrostatique superposés
ES2985956A1 (es) * 2023-04-03 2024-11-07 Consejo Superior Investigacion Metodo de fabricacion de cubits

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8829492B2 (en) 2010-11-05 2014-09-09 Chungbuk National University Industry-Academic Cooperation Foundation Multiple quantum dot device and a production method for the device
US9842921B2 (en) * 2013-03-14 2017-12-12 Wisconsin Alumni Research Foundation Direct tunnel barrier control gates in a two-dimensional electronic system
WO2014146162A1 (fr) * 2013-03-20 2014-09-25 Newsouth Innovations Pry Limited Calcul quantique à bits quantiques basés sur un accepteur
DK3152153T3 (da) 2014-06-06 2022-04-11 Newsouth Innovations Pty Ltd Apparat til avanceret behandling
EP3082073B1 (fr) * 2015-04-12 2019-01-16 Hitachi Ltd. Traitement d'informations quantiques
WO2017213637A1 (fr) * 2016-06-08 2017-12-14 Intel Corporation Dispositifs à points quantiques pourvus de grilles à motifs
EP3469636B1 (fr) 2016-06-08 2024-02-07 SOCPRA - Sciences et Génie s.e.c. Circuit électronique pour la commande ou le couplage de charges ou de spins simples et procédés associés
FR3081155B1 (fr) * 2018-05-17 2021-10-22 Commissariat Energie Atomique Procede de fabrication d'un composant electronique a multiples ilots quantiques

Also Published As

Publication number Publication date
US20190371908A1 (en) 2019-12-05
FR3081155A1 (fr) 2019-11-22
US11088259B2 (en) 2021-08-10

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