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FR3078596B1 - Dispositif haute dynamique pour l'integration d'un courant electrique - Google Patents

Dispositif haute dynamique pour l'integration d'un courant electrique Download PDF

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Publication number
FR3078596B1
FR3078596B1 FR1851818A FR1851818A FR3078596B1 FR 3078596 B1 FR3078596 B1 FR 3078596B1 FR 1851818 A FR1851818 A FR 1851818A FR 1851818 A FR1851818 A FR 1851818A FR 3078596 B1 FR3078596 B1 FR 3078596B1
Authority
FR
France
Prior art keywords
circuit
electric current
integration
integrating
output voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1851818A
Other languages
English (en)
Other versions
FR3078596A1 (fr
Inventor
Roger Petigny
Patrick Robert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lynred SAS
Original Assignee
Ulis SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1851818A priority Critical patent/FR3078596B1/fr
Application filed by Ulis SAS filed Critical Ulis SAS
Priority to CA3089379A priority patent/CA3089379A1/fr
Priority to CN201980010353.0A priority patent/CN111656681A/zh
Priority to KR1020207021659A priority patent/KR102607038B1/ko
Priority to PCT/EP2019/054805 priority patent/WO2019166465A1/fr
Priority to EP19706685.5A priority patent/EP3759814A1/fr
Priority to US16/962,642 priority patent/US11867563B2/en
Publication of FR3078596A1 publication Critical patent/FR3078596A1/fr
Application granted granted Critical
Publication of FR3078596B1 publication Critical patent/FR3078596B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/005—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements using switched capacitors, e.g. dynamic amplifiers; using switched capacitors as resistors in differential amplifiers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22—Electrical features thereof
    • G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • H03F1/086—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers with FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • H03F3/185—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45928—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit
    • H03F3/45968—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit by offset reduction
    • H03F3/45991—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit by offset reduction by using balancing means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/70—Charge amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/18—Automatic control for modifying the range of signals the converter can handle, e.g. gain ranging
    • H03M1/181—Automatic control for modifying the range of signals the converter can handle, e.g. gain ranging in feedback mode, i.e. by determining the range to be selected from one or more previous digital output values
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/50—Analogue/digital converters with intermediate conversion to time interval
    • H03M1/52—Input signal integrated with linear return to datum
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J2005/202—Arrays
    • G01J2005/204—Arrays prepared by semiconductor processing, e.g. VLSI
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/156—One or more switches are realised in the feedback circuit of the amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/264—An operational amplifier based integrator or transistor based integrator being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/78—A comparator being used in a controlling circuit of an amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Multimedia (AREA)
  • Amplifiers (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Analogue/Digital Conversion (AREA)

Abstract

Ce dispositif (100a) d'intégration d'un courant électrique (I) reçu sur un nœud d'intégration (E) comporte : - un amplificateur opérationnel (62) ; - un condensateur d'intégration (64) ; - un circuit de modification (105a) d'une tension de sortie (VOUT) de l'amplificateur opérationnel réalisé par un circuit de transfert de charges configuré pour être connecté sur ledit nœud d'intégration et transférer des charges dans ledit condensateur d'intégration ; un circuit de comparaison (74) configuré pour déclencher ledit circuit de modification au moins une fois pendant ladite durée d'intégration (Tint); et - un circuit de mémorisation configuré pour mémoriser ledit nombre de déclenchements survenus pendant ladite durée d'intégration. Le courant électrique reçu est calculé en fonction de ladite tension de sortie ainsi que dudit nombre de déclenchements multiplié par ladite modification de ladite tension de sortie induite par ledit circuit de modification.
FR1851818A 2018-03-02 2018-03-02 Dispositif haute dynamique pour l'integration d'un courant electrique Active FR3078596B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1851818A FR3078596B1 (fr) 2018-03-02 2018-03-02 Dispositif haute dynamique pour l'integration d'un courant electrique
CN201980010353.0A CN111656681A (zh) 2018-03-02 2019-02-27 用于对电流进行积分的高动态装置
KR1020207021659A KR102607038B1 (ko) 2018-03-02 2019-02-27 전류를 적분하기 위한 높은 동적 디바이스
PCT/EP2019/054805 WO2019166465A1 (fr) 2018-03-02 2019-02-27 Dispositif haute dynamique pour l'integration d'un courant electrique
CA3089379A CA3089379A1 (fr) 2018-03-02 2019-02-27 Dispositif haute dynamique pour l'integration d'un courant electrique
EP19706685.5A EP3759814A1 (fr) 2018-03-02 2019-02-27 Dispositif haute dynamique pour l'integration d'un courant electrique
US16/962,642 US11867563B2 (en) 2018-03-02 2019-02-27 High dynamic device for integrating an electric current

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1851818 2018-03-02
FR1851818A FR3078596B1 (fr) 2018-03-02 2018-03-02 Dispositif haute dynamique pour l'integration d'un courant electrique

Publications (2)

Publication Number Publication Date
FR3078596A1 FR3078596A1 (fr) 2019-09-06
FR3078596B1 true FR3078596B1 (fr) 2020-02-14

Family

ID=62749104

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1851818A Active FR3078596B1 (fr) 2018-03-02 2018-03-02 Dispositif haute dynamique pour l'integration d'un courant electrique

Country Status (7)

Country Link
US (1) US11867563B2 (fr)
EP (1) EP3759814A1 (fr)
KR (1) KR102607038B1 (fr)
CN (1) CN111656681A (fr)
CA (1) CA3089379A1 (fr)
FR (1) FR3078596B1 (fr)
WO (1) WO2019166465A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11200297B2 (en) * 2019-06-12 2021-12-14 International Business Machines Corporation Integrator voltage shifting for improved performance in softmax operation
CN112162259B (zh) * 2020-09-15 2024-02-13 中国电子科技集团公司第四十四研究所 脉冲激光时间电压转换电路及其控制方法
FR3116403B1 (fr) 2020-11-19 2022-11-04 Lynred Generateur de phases programmable d’un detecteur

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4929060B2 (ja) * 2006-07-14 2012-05-09 ローム株式会社 アナログ／ディジタル変換器、照度センサ、照明装置、電子機器
US8260565B2 (en) * 2008-08-22 2012-09-04 Brookhaven Science Associates, Llc High dynamic range charge measurements
FR2941046B1 (fr) * 2009-01-15 2011-02-18 Ulis Dispositif pour la detection d'un rayonnement electromagnetique
FR3020906B1 (fr) * 2014-05-07 2018-11-02 Ulis Dispositif haute dynamique pour l'integration d'un courant electrique
US9766295B2 (en) * 2014-09-10 2017-09-19 O2Micro Inc. Coulomb counting using analog-to-frequency conversion
CN106775143B (zh) * 2015-12-31 2020-01-03 深圳市汇顶科技股份有限公司 积分电路及电容感测电路
NL2016216B1 (en) * 2016-02-03 2017-08-11 Univ Delft Tech Analog to digital data converter.
US9806552B2 (en) * 2016-02-15 2017-10-31 Analog Devices Global Analog/digital converter with charge rebalanced integrator

Also Published As

Publication number Publication date
CN111656681A (zh) 2020-09-11
US11867563B2 (en) 2024-01-09
FR3078596A1 (fr) 2019-09-06
CA3089379A1 (fr) 2019-09-06
KR20200123411A (ko) 2020-10-29
US20210072087A1 (en) 2021-03-11
WO2019166465A1 (fr) 2019-09-06
EP3759814A1 (fr) 2021-01-06
KR102607038B1 (ko) 2023-11-30

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