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FR3048288B1 - Detecteur electronique integre de variations de potentiel a haute sensibilite - Google Patents

Detecteur electronique integre de variations de potentiel a haute sensibilite Download PDF

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Publication number
FR3048288B1
FR3048288B1 FR1651570A FR1651570A FR3048288B1 FR 3048288 B1 FR3048288 B1 FR 3048288B1 FR 1651570 A FR1651570 A FR 1651570A FR 1651570 A FR1651570 A FR 1651570A FR 3048288 B1 FR3048288 B1 FR 3048288B1
Authority
FR
France
Prior art keywords
configuration
integrated electronic
mos transistor
high sensitivity
electronic sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1651570A
Other languages
English (en)
Other versions
FR3048288A1 (fr
Inventor
Stephane Monfray
Gaspard Hiblot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1651570A priority Critical patent/FR3048288B1/fr
Priority to US15/251,009 priority patent/US10074649B2/en
Publication of FR3048288A1 publication Critical patent/FR3048288A1/fr
Application granted granted Critical
Publication of FR3048288B1 publication Critical patent/FR3048288B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/483—Physical analysis of biological material
    • G01N33/487—Physical analysis of biological material of liquid biological material
    • G01N33/49—Blood
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
    • G01R19/16519—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using FET's

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Molecular Biology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

Le détecteur électronique intégré est configuré pour détecter l'apparition d'une variation de potentiel sur sa borne d'entrée et comporte un transistor MOS (11) dont le drain (D) forme une borne de sortie, et dans lequel la variation du courant de drain (Id) est représentative de ladite variation de potentiel sur la borne d'entrée. Le détecteur comprend en outre un transistor bipolaire (12) dont la base forme la borne d'entrée et dont le collecteur (C) est électriquement connecté à la grille (G) du transistor MOS, et possède une première configuration dans laquelle le transistor bipolaire (12) est passant et le transistor MOS est bloqué, et une deuxième configuration dans laquelle le transistor bipolaire (12) est bloqué et le transistor MOS (11) est dans un fonctionnement sous-seuil, le détecteur étant configuré pour passer de sa première configuration à sa deuxième configuration lors de l'apparition de ladite variation de potentiel.
FR1651570A 2016-02-25 2016-02-25 Detecteur electronique integre de variations de potentiel a haute sensibilite Expired - Fee Related FR3048288B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1651570A FR3048288B1 (fr) 2016-02-25 2016-02-25 Detecteur electronique integre de variations de potentiel a haute sensibilite
US15/251,009 US10074649B2 (en) 2016-02-25 2016-08-30 High-sensitivity electronic detector

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1651570A FR3048288B1 (fr) 2016-02-25 2016-02-25 Detecteur electronique integre de variations de potentiel a haute sensibilite
FR1651570 2016-02-25

Publications (2)

Publication Number Publication Date
FR3048288A1 FR3048288A1 (fr) 2017-09-01
FR3048288B1 true FR3048288B1 (fr) 2018-03-23

Family

ID=57348744

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1651570A Expired - Fee Related FR3048288B1 (fr) 2016-02-25 2016-02-25 Detecteur electronique integre de variations de potentiel a haute sensibilite

Country Status (2)

Country Link
US (1) US10074649B2 (fr)
FR (1) FR3048288B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11482521B2 (en) * 2020-02-06 2022-10-25 Globalfoundries U.S. Inc. Integrated circuit with P-N-P junction and vertically aligned field effect transistor, and method to form same

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JPS51101478A (fr) * 1975-03-04 1976-09-07 Suwa Seikosha Kk
US5087579A (en) * 1987-05-28 1992-02-11 Texas Instruments Incorporated Method for fabricating an integrated bipolar-CMOS circuit isolation for providing different backgate and substrate bias
US5256582A (en) * 1989-02-10 1993-10-26 Texas Instruments Incorporated Method of forming complementary bipolar and MOS transistor having power and logic structures on the same integrated circuit substrate
US5171699A (en) * 1990-10-03 1992-12-15 Texas Instruments Incorporated Vertical DMOS transistor structure built in an N-well CMOS-based BiCMOS process and method of fabrication
US5296409A (en) * 1992-05-08 1994-03-22 National Semiconductor Corporation Method of making n-channel and p-channel junction field-effect transistors and CMOS transistors using a CMOS or bipolar/CMOS process
JPH06163907A (ja) * 1992-11-20 1994-06-10 Hitachi Ltd 電圧駆動型半導体装置
US5936454A (en) * 1993-06-01 1999-08-10 Motorola, Inc. Lateral bipolar transistor operating with independent base and gate biasing
US5717241A (en) * 1993-12-09 1998-02-10 Northern Telecom Limited Gate controlled lateral bipolar junction transistor
US5764106A (en) * 1993-12-09 1998-06-09 Northern Telecom Limited Gain-controlled amplifier and automatic gain control amplifier using GCLBT
JP3325396B2 (ja) * 1994-08-19 2002-09-17 株式会社東芝 半導体集積回路
US6071768A (en) * 1996-05-17 2000-06-06 Texas Instruments Incorporated Method of making an efficient NPN turn-on in a high voltage DENMOS transistor for ESD protection
EP0809293B1 (fr) * 1996-05-21 2001-08-29 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Structure semi-conductrice de puissance avec transistor latéral commandé par un transistor vertical
FR2789519B1 (fr) * 1999-02-05 2003-03-28 Commissariat Energie Atomique Transistor mos a tension de seuil dynamique equipe d'un limiteur de courant, et procede de realisation d'un tel transistor
JP4128700B2 (ja) * 1999-09-08 2008-07-30 ローム株式会社 誘導性負荷駆動回路
JP4091785B2 (ja) * 2001-12-13 2008-05-28 三菱電機株式会社 半導体回路
JP2005005446A (ja) * 2003-06-11 2005-01-06 Renesas Technology Corp 半導体装置およびその製造方法
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Also Published As

Publication number Publication date
FR3048288A1 (fr) 2017-09-01
US10074649B2 (en) 2018-09-11
US20170248543A1 (en) 2017-08-31

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