[go: up one dir, main page]

FR3038133B1 - Cellule memoire a changement de phase ayant une structure compacte - Google Patents

Cellule memoire a changement de phase ayant une structure compacte

Info

Publication number
FR3038133B1
FR3038133B1 FR1555733A FR1555733A FR3038133B1 FR 3038133 B1 FR3038133 B1 FR 3038133B1 FR 1555733 A FR1555733 A FR 1555733A FR 1555733 A FR1555733 A FR 1555733A FR 3038133 B1 FR3038133 B1 FR 3038133B1
Authority
FR
France
Prior art keywords
memory cell
phase change
change memory
compact structure
compact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1555733A
Other languages
English (en)
Other versions
FR3038133A1 (fr
Inventor
Philippe Boivin
Simon Jeannot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS, STMicroelectronics Rousset SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1555733A priority Critical patent/FR3038133B1/fr
Priority to US15/098,025 priority patent/US9735353B2/en
Publication of FR3038133A1 publication Critical patent/FR3038133A1/fr
Priority to US15/654,405 priority patent/US20170317275A1/en
Application granted granted Critical
Publication of FR3038133B1 publication Critical patent/FR3038133B1/fr
Priority to US16/457,855 priority patent/US11031550B2/en
Priority to US17/328,917 priority patent/US11957067B2/en
Priority to US18/506,383 priority patent/US20240081160A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/82—Array having, for accessing a cell, a word line, a bit line and a plate or source line receiving different potentials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
FR1555733A 2015-06-23 2015-06-23 Cellule memoire a changement de phase ayant une structure compacte Expired - Fee Related FR3038133B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1555733A FR3038133B1 (fr) 2015-06-23 2015-06-23 Cellule memoire a changement de phase ayant une structure compacte
US15/098,025 US9735353B2 (en) 2015-06-23 2016-04-13 Phase-change memory cell having a compact structure
US15/654,405 US20170317275A1 (en) 2015-06-23 2017-07-19 Phase-change memory cell having a compact structure
US16/457,855 US11031550B2 (en) 2015-06-23 2019-06-28 Phase-change memory cell having a compact structure
US17/328,917 US11957067B2 (en) 2015-06-23 2021-05-24 Phase-change memory cell having a compact structure
US18/506,383 US20240081160A1 (en) 2015-06-23 2023-11-10 Phase-change memory cell having a compact structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1555733A FR3038133B1 (fr) 2015-06-23 2015-06-23 Cellule memoire a changement de phase ayant une structure compacte

Publications (2)

Publication Number Publication Date
FR3038133A1 FR3038133A1 (fr) 2016-12-30
FR3038133B1 true FR3038133B1 (fr) 2017-08-25

Family

ID=54356455

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1555733A Expired - Fee Related FR3038133B1 (fr) 2015-06-23 2015-06-23 Cellule memoire a changement de phase ayant une structure compacte

Country Status (2)

Country Link
US (5) US9735353B2 (fr)
FR (1) FR3038133B1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3038133B1 (fr) * 2015-06-23 2017-08-25 St Microelectronics Crolles 2 Sas Cellule memoire a changement de phase ayant une structure compacte
EP3261141A1 (fr) * 2016-06-24 2017-12-27 STMicroelectronics Srl Cellule de mémoire à changement de phase et procédé de fabrication de la cellule de mémoire à changement de phase
FR3066310B1 (fr) * 2017-05-12 2020-01-24 Stmicroelectronics (Rousset) Sas Cellule memoire de type ram resistive
FR3073319A1 (fr) 2017-11-09 2019-05-10 Stmicroelectronics (Grenoble 2) Sas Puce a memoire non volatile embarquee a materiau a changement de phase
US10580977B2 (en) * 2018-07-24 2020-03-03 International Business Machines Corporation Tightly integrated 1T1R ReRAM for planar technology
CN114430006A (zh) * 2020-10-29 2022-05-03 意法半导体(克洛尔2)公司 相变存储器
CN116437670A (zh) * 2021-12-29 2023-07-14 长鑫存储技术有限公司 半导体结构及其制备方法
JP2023127756A (ja) * 2022-03-02 2023-09-14 キオクシア株式会社 抵抗変化型不揮発性メモリ

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982912A (ja) 1995-09-13 1997-03-28 Toshiba Corp 半導体記憶装置及びその製造方法
US6545287B2 (en) * 2001-09-07 2003-04-08 Intel Corporation Using selective deposition to form phase-change memory cells
US7042749B2 (en) * 2002-05-16 2006-05-09 Micron Technology, Inc. Stacked 1T-nmemory cell structure
ATE410774T1 (de) 2005-05-19 2008-10-15 Koninkl Philips Electronics Nv Verfahren zum regeln des zuerst schmelzenden bereiches einer pcm-zelle und damit hergestellte vorrichtungen
EP1845567A1 (fr) * 2006-04-11 2007-10-17 STMicroelectronics S.r.l. Dispositif de mémoire à changement de phase et procédé associé
US7538411B2 (en) * 2006-04-26 2009-05-26 Infineon Technologies Ag Integrated circuit including resistivity changing memory cells
US7479671B2 (en) * 2006-08-29 2009-01-20 International Business Machines Corporation Thin film phase change memory cell formed on silicon-on-insulator substrate
US8258493B2 (en) * 2006-11-20 2012-09-04 Panasonic Corporation Nonvolatile semiconductor memory apparatus and manufacturing method thereof
US8513637B2 (en) 2007-07-13 2013-08-20 Macronix International Co., Ltd. 4F2 self align fin bottom electrodes FET drive phase change memory
US8043888B2 (en) * 2008-01-18 2011-10-25 Freescale Semiconductor, Inc. Phase change memory cell with heater and method therefor
KR101415509B1 (ko) * 2008-07-24 2014-07-04 삼성전자주식회사 메모리 소자, 그 제조 방법 및 동작 방법
JP2010251529A (ja) * 2009-04-16 2010-11-04 Sony Corp 半導体記憶装置およびその製造方法
JP2012204404A (ja) * 2011-03-23 2012-10-22 Toshiba Corp 抵抗変化型不揮発性半導体記憶装置
US8987700B2 (en) * 2011-12-02 2015-03-24 Macronix International Co., Ltd. Thermally confined electrode for programmable resistance memory
US8698118B2 (en) * 2012-02-29 2014-04-15 Globalfoundries Singapore Pte Ltd Compact RRAM device and methods of making same
US9455343B2 (en) 2013-09-27 2016-09-27 Intel Corporation Hybrid phase field effect transistor
KR102114202B1 (ko) * 2013-11-25 2020-05-26 삼성전자주식회사 가변 저항 메모리 소자 및 그 형성 방법
FR3038133B1 (fr) * 2015-06-23 2017-08-25 St Microelectronics Crolles 2 Sas Cellule memoire a changement de phase ayant une structure compacte

Also Published As

Publication number Publication date
US20190326510A1 (en) 2019-10-24
US20210280779A1 (en) 2021-09-09
US20170317275A1 (en) 2017-11-02
US11957067B2 (en) 2024-04-09
US20240081160A1 (en) 2024-03-07
US20160380190A1 (en) 2016-12-29
US11031550B2 (en) 2021-06-08
FR3038133A1 (fr) 2016-12-30
US9735353B2 (en) 2017-08-15

Similar Documents

Publication Publication Date Title
FR3038133B1 (fr) Cellule memoire a changement de phase ayant une structure compacte
EP3729429A4 (fr) Techniques de lecture de cellule de mémoire auto-référencées
EP3469593A4 (fr) Récupération de cellule de mémoire ferroélectrique
FR3009421B1 (fr) Cellule memoire non volatile
HK1250667A1 (zh) 細胞
HK1252162A1 (zh) 細胞
SI2958938T1 (sl) Miši, ki izražajo humanizirane koreceptorje za celice T
EP2973579A4 (fr) Masque de mémoire à changement de phase
EP2948983A4 (fr) Mémoire 3d
FR3042634B1 (fr) Point memoire magnetique
FR3031622B1 (fr) Point memoire magnetique
EP2943959A4 (fr) Réseau logique pour mémoire non-volatile
EP3304560A4 (fr) Courant de mémoire à changement de phase
IL263924A (en) Veto cells generated from memory t cells
DK2970843T3 (da) Fremgangsmåder til frembringelse af cellebank med høj densitet
DE112016002334T8 (de) Niedriger standbystrom mit schneller einschaltung für nichtflüchtige speichervorrichtungen
FR3048810B1 (fr) Cellule memoire cam
EP2988346A4 (fr) Boîtier de cellule
DK3265555T3 (da) T-celle-ekspansion
EP2973580A4 (fr) Vérification de programmation de cellule
EP2980073A4 (fr) Analogue de nucléotide photosensible ayant une capacité de photo-réticulation
FR3021803B1 (fr) Cellules memoire jumelles accessibles individuellement en lecture
FR2995443B1 (fr) Cellule memoire a changement de phase
EP3144981C0 (fr) Module de cellule solaire
FR2985840B1 (fr) Cellule memoire a changement de phase

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20161230

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

ST Notification of lapse

Effective date: 20220205