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FR3027451B1 - Substrat et procede de fabrication d'un substrat - Google Patents

Substrat et procede de fabrication d'un substrat

Info

Publication number
FR3027451B1
FR3027451B1 FR1460110A FR1460110A FR3027451B1 FR 3027451 B1 FR3027451 B1 FR 3027451B1 FR 1460110 A FR1460110 A FR 1460110A FR 1460110 A FR1460110 A FR 1460110A FR 3027451 B1 FR3027451 B1 FR 3027451B1
Authority
FR
France
Prior art keywords
substrate
manufacturing
manufacturing substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1460110A
Other languages
English (en)
Other versions
FR3027451A1 (fr
Inventor
Ionut Radu
Oleg Kononchuk
Carlos Mazure
Daniel Delprat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1460110A priority Critical patent/FR3027451B1/fr
Priority to PCT/EP2015/074181 priority patent/WO2016062674A1/fr
Publication of FR3027451A1 publication Critical patent/FR3027451A1/fr
Application granted granted Critical
Publication of FR3027451B1 publication Critical patent/FR3027451B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
FR1460110A 2014-10-21 2014-10-21 Substrat et procede de fabrication d'un substrat Active FR3027451B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1460110A FR3027451B1 (fr) 2014-10-21 2014-10-21 Substrat et procede de fabrication d'un substrat
PCT/EP2015/074181 WO2016062674A1 (fr) 2014-10-21 2015-10-19 Substrat et procédé de production d'un substrat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1460110A FR3027451B1 (fr) 2014-10-21 2014-10-21 Substrat et procede de fabrication d'un substrat

Publications (2)

Publication Number Publication Date
FR3027451A1 FR3027451A1 (fr) 2016-04-22
FR3027451B1 true FR3027451B1 (fr) 2016-11-04

Family

ID=52007194

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1460110A Active FR3027451B1 (fr) 2014-10-21 2014-10-21 Substrat et procede de fabrication d'un substrat

Country Status (2)

Country Link
FR (1) FR3027451B1 (fr)
WO (1) WO2016062674A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110085550A (zh) * 2018-01-26 2019-08-02 沈阳硅基科技有限公司 一种半导体产品用绝缘层结构及其制备方法
FR3085536A1 (fr) * 2018-09-03 2020-03-06 Soitec Dispositif cfet et procede de fabrication d'un tel dispositif

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1858071A1 (fr) * 2006-05-18 2007-11-21 S.O.I.TEC. Silicon on Insulator Technologies S.A. Procédé de fabrication d'une plaquette de type semi-conducteur sur isolant, et plaquette de type semi-conducteur sur isolant
JP5185284B2 (ja) * 2006-12-26 2013-04-17 ソイテック 半導体オンインシュレータ構造体を製造する方法
FR2953640B1 (fr) * 2009-12-04 2012-02-10 S O I Tec Silicon On Insulator Tech Procede de fabrication d'une structure de type semi-conducteur sur isolant, a pertes electriques diminuees et structure correspondante

Also Published As

Publication number Publication date
WO2016062674A1 (fr) 2016-04-28
FR3027451A1 (fr) 2016-04-22

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