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FR2993398B1 - Structures semi-conductrices comprenant des microcanaux fluidiques pour le refroidissement et procédés associés. - Google Patents

Structures semi-conductrices comprenant des microcanaux fluidiques pour le refroidissement et procédés associés.

Info

Publication number
FR2993398B1
FR2993398B1 FR1256680A FR1256680A FR2993398B1 FR 2993398 B1 FR2993398 B1 FR 2993398B1 FR 1256680 A FR1256680 A FR 1256680A FR 1256680 A FR1256680 A FR 1256680A FR 2993398 B1 FR2993398 B1 FR 2993398B1
Authority
FR
France
Prior art keywords
cooling
related methods
semiconductor structures
fluid microchannels
microchannels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1256680A
Other languages
English (en)
Other versions
FR2993398A1 (fr
Inventor
Mariam Sadaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1256680A priority Critical patent/FR2993398B1/fr
Publication of FR2993398A1 publication Critical patent/FR2993398A1/fr
Application granted granted Critical
Publication of FR2993398B1 publication Critical patent/FR2993398B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481Internal lead connections, e.g. via connections, feedthrough structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16135Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06513Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06541Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06548Conductive via connections through the substrate, container, or encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06589Thermal management, e.g. cooling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
FR1256680A 2012-07-11 2012-07-11 Structures semi-conductrices comprenant des microcanaux fluidiques pour le refroidissement et procédés associés. Expired - Fee Related FR2993398B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR1256680A FR2993398B1 (fr) 2012-07-11 2012-07-11 Structures semi-conductrices comprenant des microcanaux fluidiques pour le refroidissement et procédés associés.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1256680A FR2993398B1 (fr) 2012-07-11 2012-07-11 Structures semi-conductrices comprenant des microcanaux fluidiques pour le refroidissement et procédés associés.

Publications (2)

Publication Number Publication Date
FR2993398A1 FR2993398A1 (fr) 2014-01-17
FR2993398B1 true FR2993398B1 (fr) 2015-05-29

Family

ID=47003027

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1256680A Expired - Fee Related FR2993398B1 (fr) 2012-07-11 2012-07-11 Structures semi-conductrices comprenant des microcanaux fluidiques pour le refroidissement et procédés associés.

Country Status (1)

Country Link
FR (1) FR2993398B1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107068571A (zh) * 2016-01-15 2017-08-18 Soitec公司 制造含高电阻率层的半导体结构的方法及相关半导体结构

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7159620B2 (ja) * 2018-05-30 2022-10-25 富士電機株式会社 半導体装置、冷却モジュール、電力変換装置及び電動車両

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060145356A1 (en) * 2005-01-06 2006-07-06 International Business Machines Corporation On-chip cooling
US8269341B2 (en) * 2008-11-21 2012-09-18 Infineon Technologies Ag Cooling structures and methods
US7943428B2 (en) * 2008-12-24 2011-05-17 International Business Machines Corporation Bonded semiconductor substrate including a cooling mechanism

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107068571A (zh) * 2016-01-15 2017-08-18 Soitec公司 制造含高电阻率层的半导体结构的方法及相关半导体结构
CN107068571B (zh) * 2016-01-15 2021-09-10 Soitec公司 制造含高电阻率层的半导体结构的方法及相关半导体结构

Also Published As

Publication number Publication date
FR2993398A1 (fr) 2014-01-17

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