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FR2980636B1 - Protection d'un dispositif electronique contre une attaque laser en face arriere, et support semiconducteur correspondant - Google Patents

Protection d'un dispositif electronique contre une attaque laser en face arriere, et support semiconducteur correspondant

Info

Publication number
FR2980636B1
FR2980636B1 FR1158451A FR1158451A FR2980636B1 FR 2980636 B1 FR2980636 B1 FR 2980636B1 FR 1158451 A FR1158451 A FR 1158451A FR 1158451 A FR1158451 A FR 1158451A FR 2980636 B1 FR2980636 B1 FR 2980636B1
Authority
FR
France
Prior art keywords
protection
electronic device
device against
corresponding semiconductor
semiconductor support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1158451A
Other languages
English (en)
Other versions
FR2980636A1 (fr
Inventor
Pascal Fornara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1158451A priority Critical patent/FR2980636B1/fr
Priority to US13/616,603 priority patent/US8835923B2/en
Publication of FR2980636A1 publication Critical patent/FR2980636A1/fr
Application granted granted Critical
Publication of FR2980636B1 publication Critical patent/FR2980636B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
FR1158451A 2011-09-22 2011-09-22 Protection d'un dispositif electronique contre une attaque laser en face arriere, et support semiconducteur correspondant Active FR2980636B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1158451A FR2980636B1 (fr) 2011-09-22 2011-09-22 Protection d'un dispositif electronique contre une attaque laser en face arriere, et support semiconducteur correspondant
US13/616,603 US8835923B2 (en) 2011-09-22 2012-09-14 Protection method for an electronic device and corresponding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1158451A FR2980636B1 (fr) 2011-09-22 2011-09-22 Protection d'un dispositif electronique contre une attaque laser en face arriere, et support semiconducteur correspondant

Publications (2)

Publication Number Publication Date
FR2980636A1 FR2980636A1 (fr) 2013-03-29
FR2980636B1 true FR2980636B1 (fr) 2016-01-08

Family

ID=45375389

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1158451A Active FR2980636B1 (fr) 2011-09-22 2011-09-22 Protection d'un dispositif electronique contre une attaque laser en face arriere, et support semiconducteur correspondant

Country Status (2)

Country Link
US (1) US8835923B2 (fr)
FR (1) FR2980636B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201607589D0 (en) * 2016-04-29 2016-06-15 Nagravision Sa Integrated circuit device

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4203780A (en) * 1978-08-23 1980-05-20 Sony Corporation Fe Ion implantation into semiconductor substrate for reduced lifetime sensitivity to temperature
US4816421A (en) 1986-11-24 1989-03-28 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making a heteroepitaxial structure by mesotaxy induced by buried implantation
US5387555A (en) 1992-09-03 1995-02-07 Harris Corporation Bonded wafer processing with metal silicidation
JP3191972B2 (ja) 1992-01-31 2001-07-23 キヤノン株式会社 半導体基板の作製方法及び半導体基板
US5359219A (en) 1992-12-04 1994-10-25 Texas Instruments Incorporated Silicon on insulator device comprising improved substrate doping
DE4433330C2 (de) 1994-09-19 1997-01-30 Fraunhofer Ges Forschung Verfahren zur Herstellung von Halbleiterstrukturen mit vorteilhaften Hochfrequenzeigenschaften sowie eine Halbleiterwaferstruktur
JPH11250215A (ja) * 1998-03-04 1999-09-17 Nippon Telegr & Teleph Corp <Ntt> Ｉｃチップおよびｉｃカード
US6404643B1 (en) * 1998-10-15 2002-06-11 Amerasia International Technology, Inc. Article having an embedded electronic device, and method of making same
FR2787635B1 (fr) 1998-12-17 2001-03-16 St Microelectronics Sa Dispositif semi-conducteur avec substrat sur isolant a decouplage de bruit
FR2787636B1 (fr) 1998-12-17 2001-03-16 St Microelectronics Sa Dispositif semi-conducteur avec substrat du type bicmos a decouplage de bruit
US6255195B1 (en) * 1999-02-22 2001-07-03 Intersil Corporation Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method
EP1186042A1 (fr) * 2000-03-28 2002-03-13 Koninklijke Philips Electronics N.V. Circuit integre a element de memoire programmable
US6344125B1 (en) * 2000-04-06 2002-02-05 International Business Machines Corporation Pattern-sensitive electrolytic metal plating
US7485920B2 (en) * 2000-06-14 2009-02-03 International Rectifier Corporation Process to create buried heavy metal at selected depth
US6391752B1 (en) 2000-09-12 2002-05-21 Taiwan Semiconductor Manufacturing, Co., Ltd. Method of fabricating a silicon-on-insulator semiconductor device with an implanted ground plane
DE10105725B4 (de) * 2001-02-08 2008-11-13 Infineon Technologies Ag Halbleiterchip mit einem Substrat, einer integrierten Schaltung und einer Abschirmvorrichtung
US6444578B1 (en) * 2001-02-21 2002-09-03 International Business Machines Corporation Self-aligned silicide process for reduction of Si consumption in shallow junction and thin SOI electronic devices
US7608927B2 (en) 2002-08-29 2009-10-27 Micron Technology, Inc. Localized biasing for silicon on insulator structures
US6835983B2 (en) 2002-10-25 2004-12-28 International Business Machines Corporation Silicon-on-insulator (SOI) integrated circuit (IC) chip with the silicon layers consisting of regions of different thickness
JP4250038B2 (ja) * 2003-08-20 2009-04-08 シャープ株式会社 半導体集積回路
FR2864336B1 (fr) * 2003-12-23 2006-04-28 Commissariat Energie Atomique Procede de scellement de deux plaques avec formation d'un contact ohmique entre celles-ci
JP5334354B2 (ja) * 2005-05-13 2013-11-06 シャープ株式会社 半導体装置の製造方法
FR2896618B1 (fr) 2006-01-23 2008-05-23 Soitec Silicon On Insulator Procede de fabrication d'un substrat composite
FR2911430B1 (fr) 2007-01-15 2009-04-17 Soitec Silicon On Insulator "procede de fabrication d'un substrat hybride"
FR2922360A1 (fr) * 2007-10-12 2009-04-17 Soitec Silicon On Insulator Procede de fabrication d'un substrat de type semi- conducteur sur isolant a plan de masse integre.
EP2306518B1 (fr) * 2009-10-05 2014-12-31 STMicroelectronics (Rousset) SAS Méthode de protection d'une puce de circuit intégré contre une analyse par attaques laser
US8587063B2 (en) 2009-11-06 2013-11-19 International Business Machines Corporation Hybrid double box back gate silicon-on-insulator wafers with enhanced mobility channels
US8609533B2 (en) 2012-03-30 2013-12-17 GlobalFoundries, Inc. Methods for fabricating integrated circuits having substrate contacts and integrated circuits having substrate contacts

Also Published As

Publication number Publication date
US8835923B2 (en) 2014-09-16
US20130075726A1 (en) 2013-03-28
FR2980636A1 (fr) 2013-03-29

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