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FR2969825B1 - Composant vertical bidirectionnel a double sillonnage - Google Patents

Composant vertical bidirectionnel a double sillonnage

Info

Publication number
FR2969825B1
FR2969825B1 FR1061213A FR1061213A FR2969825B1 FR 2969825 B1 FR2969825 B1 FR 2969825B1 FR 1061213 A FR1061213 A FR 1061213A FR 1061213 A FR1061213 A FR 1061213A FR 2969825 B1 FR2969825 B1 FR 2969825B1
Authority
FR
France
Prior art keywords
vertical component
bidirectional double
siding
siding vertical
bidirectional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1061213A
Other languages
English (en)
Other versions
FR2969825A1 (fr
Inventor
Yannick Hague
Samuel Menard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Tours SAS
Original Assignee
STMicroelectronics Tours SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Tours SAS filed Critical STMicroelectronics Tours SAS
Priority to FR1061213A priority Critical patent/FR2969825B1/fr
Priority to US13/332,404 priority patent/US8686515B2/en
Publication of FR2969825A1 publication Critical patent/FR2969825A1/fr
Application granted granted Critical
Publication of FR2969825B1 publication Critical patent/FR2969825B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/041—Manufacture or treatment of multilayer diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H10D18/021—Manufacture or treatment of bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/108—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having localised breakdown regions, e.g. built-in avalanching regions 
FR1061213A 2010-12-23 2010-12-23 Composant vertical bidirectionnel a double sillonnage Expired - Fee Related FR2969825B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1061213A FR2969825B1 (fr) 2010-12-23 2010-12-23 Composant vertical bidirectionnel a double sillonnage
US13/332,404 US8686515B2 (en) 2010-12-23 2011-12-21 Double-groove bidirectional vertical component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1061213A FR2969825B1 (fr) 2010-12-23 2010-12-23 Composant vertical bidirectionnel a double sillonnage

Publications (2)

Publication Number Publication Date
FR2969825A1 FR2969825A1 (fr) 2012-06-29
FR2969825B1 true FR2969825B1 (fr) 2013-07-12

Family

ID=44064619

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1061213A Expired - Fee Related FR2969825B1 (fr) 2010-12-23 2010-12-23 Composant vertical bidirectionnel a double sillonnage

Country Status (2)

Country Link
US (1) US8686515B2 (fr)
FR (1) FR2969825B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3023060A1 (fr) * 2014-06-26 2016-01-01 St Microelectronics Tours Sas Composant de protection contre des surtensions
CN109841690A (zh) * 2017-11-27 2019-06-04 百福林企业股份有限公司 低电容二端闸流体构造及其制造方法
CN115148589A (zh) * 2021-03-29 2022-10-04 力特半导体（无锡）有限公司 半导体台面器件形成方法
CN113823560A (zh) * 2021-08-11 2021-12-21 浙江里阳半导体有限公司 低压放电管芯片的制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55133569A (en) * 1979-04-06 1980-10-17 Hitachi Ltd Semiconductor device
US4551353A (en) * 1981-12-30 1985-11-05 Unitrode Corporation Method for reducing leakage currents in semiconductor devices
GB2207803A (en) * 1987-07-27 1989-02-08 Philips Electronic Associated Junction breakdown prevention
US4967256A (en) * 1988-07-08 1990-10-30 Texas Instruments Incorporated Overvoltage protector
GB2263579A (en) * 1992-01-24 1993-07-28 Texas Instruments Ltd An integrated circuit with intermingled electrodes
FR2709872B1 (fr) * 1993-09-07 1995-11-24 Sgs Thomson Microelectronics Diode de shockley bidirectionnelle.
US5479031A (en) 1993-09-10 1995-12-26 Teccor Electronics, Inc. Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value
FR2713400B1 (fr) * 1993-11-29 1996-02-16 Sgs Thomson Microelectronics Composant de protection triangle.
FR2734113B1 (fr) * 1995-05-12 1997-07-25 Sgs Thomson Microelectronics Composant de protection complet de circuit d'interface de lignes d'abonnes
FR2753837B1 (fr) * 1996-09-25 1999-01-29 Composant de protection a retournement bidirectionnel a claquage en surface
US6956248B2 (en) * 1999-03-01 2005-10-18 Teccor Electronics, Lp Semiconductor device for low voltage protection with low capacitance

Also Published As

Publication number Publication date
US8686515B2 (en) 2014-04-01
FR2969825A1 (fr) 2012-06-29
US20120161200A1 (en) 2012-06-28

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150831