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FR2968831B1 - Procedes de formation de materiaux massifs de nitrure iii sur des couches matricielles de croissance de nitrure de metal et structures formees par ces procedes - Google Patents

Procedes de formation de materiaux massifs de nitrure iii sur des couches matricielles de croissance de nitrure de metal et structures formees par ces procedes

Info

Publication number
FR2968831B1
FR2968831B1 FR1060271A FR1060271A FR2968831B1 FR 2968831 B1 FR2968831 B1 FR 2968831B1 FR 1060271 A FR1060271 A FR 1060271A FR 1060271 A FR1060271 A FR 1060271A FR 2968831 B1 FR2968831 B1 FR 2968831B1
Authority
FR
France
Prior art keywords
template layer
methods
nitride semiconductor
structures formed
formed therefrom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1060271A
Other languages
English (en)
Other versions
FR2968831A1 (fr
Inventor
Chantal Arena
Ronald Thomas Bertram
Ed Lindow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1060271A priority Critical patent/FR2968831B1/fr
Priority to TW100131354A priority patent/TWI436409B/zh
Priority to PCT/EP2011/070771 priority patent/WO2012069520A1/fr
Priority to KR1020137015095A priority patent/KR20130122640A/ko
Priority to CN201180056320.3A priority patent/CN103221586B/zh
Priority to JP2013539299A priority patent/JP5892447B2/ja
Priority to DE112011103869T priority patent/DE112011103869T5/de
Priority to US13/988,987 priority patent/US9023721B2/en
Publication of FR2968831A1 publication Critical patent/FR2968831A1/fr
Application granted granted Critical
Publication of FR2968831B1 publication Critical patent/FR2968831B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR1060271A 2010-11-23 2010-12-08 Procedes de formation de materiaux massifs de nitrure iii sur des couches matricielles de croissance de nitrure de metal et structures formees par ces procedes Expired - Fee Related FR2968831B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1060271A FR2968831B1 (fr) 2010-12-08 2010-12-08 Procedes de formation de materiaux massifs de nitrure iii sur des couches matricielles de croissance de nitrure de metal et structures formees par ces procedes
TW100131354A TWI436409B (zh) 2010-11-23 2011-08-31 於金屬-氮化物生長模片層上形成主體三族-氮化物材料之方法及應用此等方法所形成之構造
KR1020137015095A KR20130122640A (ko) 2010-11-23 2011-11-23 금속-질화물 성장 템플레이트층들 상에 벌크 iii-질화물 물질들을 형성하는 방법들 및 그와 같은 방법들에 의해 형성되는 구조들
CN201180056320.3A CN103221586B (zh) 2010-11-23 2011-11-23 在金属氮化物生长模板层上形成块状iii族氮化物材料的方法以及由所述方法形成的结构体
PCT/EP2011/070771 WO2012069520A1 (fr) 2010-11-23 2011-11-23 Procédés de formation de matériaux de nitrure iii en vrac sur des couches formant un gabarit de croissance en nitrure métallique et structures formées par de tels procédés
JP2013539299A JP5892447B2 (ja) 2010-11-23 2011-11-23 金属窒化物成長テンプレート層上にバルクｉｉｉ族窒化物材料を形成する方法、及びその方法によって形成される構造体
DE112011103869T DE112011103869T5 (de) 2010-11-23 2011-11-23 Verfahren zum Ausbilden von III-Nitridgrundmaterialien auf Metallnitrid-Wachstumsvorlagenschichten und Strukturen, die durch derartige Verfahren ausgebildet sind
US13/988,987 US9023721B2 (en) 2010-11-23 2011-11-23 Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1060271A FR2968831B1 (fr) 2010-12-08 2010-12-08 Procedes de formation de materiaux massifs de nitrure iii sur des couches matricielles de croissance de nitrure de metal et structures formees par ces procedes

Publications (2)

Publication Number Publication Date
FR2968831A1 FR2968831A1 (fr) 2012-06-15
FR2968831B1 true FR2968831B1 (fr) 2012-12-21

Family

ID=43920644

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1060271A Expired - Fee Related FR2968831B1 (fr) 2010-11-23 2010-12-08 Procedes de formation de materiaux massifs de nitrure iii sur des couches matricielles de croissance de nitrure de metal et structures formees par ces procedes

Country Status (7)

Country Link
JP (1) JP5892447B2 (fr)
KR (1) KR20130122640A (fr)
CN (1) CN103221586B (fr)
DE (1) DE112011103869T5 (fr)
FR (1) FR2968831B1 (fr)
TW (1) TWI436409B (fr)
WO (1) WO2012069520A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101713718B1 (ko) * 2015-02-23 2017-03-08 현대자동차 주식회사 연료전지용 분리판의 코팅 방법 및 연료전지용 분리판
CN106012022A (zh) * 2016-08-01 2016-10-12 中国电子科技集团公司第四十六研究所 一种提高半绝缘氮化镓单晶电阻率均匀性的Fe掺杂方法
JP7180984B2 (ja) * 2018-03-01 2022-11-30 株式会社ニューフレアテクノロジー 気相成長方法
CN109468680A (zh) * 2018-12-19 2019-03-15 东莞市中镓半导体科技有限公司 一种应用于氢化物气相外延设备的气体预热装置
TWI832407B (zh) * 2022-09-01 2024-02-11 財團法人金屬工業研究發展中心 電漿輔助退火系統及其退火方法
KR102546997B1 (ko) * 2022-12-02 2023-06-23 이상주 반도체 배기가스 처리장치

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US5610106A (en) 1995-03-10 1997-03-11 Sony Corporation Plasma enhanced chemical vapor deposition of titanium nitride using ammonia
US6221174B1 (en) 1999-02-11 2001-04-24 Applied Materials, Inc. Method of performing titanium/titanium nitride integration
US6179913B1 (en) 1999-04-16 2001-01-30 Cbl Technologies, Inc. Compound gas injection system and methods
JP2001217193A (ja) * 2000-02-01 2001-08-10 Namiki Precision Jewel Co Ltd ＡｌＮバッファ層の作成方法、ＡｌＮバッファ層、ＧａＮ単結晶膜の作成方法およびＧａＮ単結晶膜
AU2002219978A1 (en) 2000-11-30 2002-06-11 Kyma Technologies, Inc. Method and apparatus for producing miiin columns and miiin materials grown thereon
JP3946448B2 (ja) * 2001-02-08 2007-07-18 日亜化学工業株式会社 窒化物半導体基板の製造方法
WO2002069376A1 (fr) * 2001-02-27 2002-09-06 Cbl Technologies Systeme et procedes hybrides de depot
US7427555B2 (en) * 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
JP5252465B2 (ja) * 2002-12-16 2013-07-31 独立行政法人科学技術振興機構 ハイドライド気相成長法による平坦な無極性ａ面窒化ガリウムの成長
JP4361747B2 (ja) * 2003-03-04 2009-11-11 東京エレクトロン株式会社 薄膜の形成方法
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Also Published As

Publication number Publication date
DE112011103869T5 (de) 2013-08-22
FR2968831A1 (fr) 2012-06-15
WO2012069520A1 (fr) 2012-05-31
JP2014502246A (ja) 2014-01-30
KR20130122640A (ko) 2013-11-07
CN103221586B (zh) 2016-08-10
TWI436409B (zh) 2014-05-01
TW201250791A (en) 2012-12-16
CN103221586A (zh) 2013-07-24
JP5892447B2 (ja) 2016-03-23

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