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FR2958452B1 - JUNCTION TERMINATION EXTENSION RINGS - Google Patents

JUNCTION TERMINATION EXTENSION RINGS

Info

Publication number
FR2958452B1
FR2958452B1 FR1052314A FR1052314A FR2958452B1 FR 2958452 B1 FR2958452 B1 FR 2958452B1 FR 1052314 A FR1052314 A FR 1052314A FR 1052314 A FR1052314 A FR 1052314A FR 2958452 B1 FR2958452 B1 FR 2958452B1
Authority
FR
France
Prior art keywords
junction termination
termination extension
extension rings
rings
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1052314A
Other languages
French (fr)
Other versions
FR2958452A1 (en
Inventor
Maxime Berthou
Philippe Godignon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alstom Transport Technologies SAS
Original Assignee
Alstom Transport SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alstom Transport SA filed Critical Alstom Transport SA
Priority to FR1052314A priority Critical patent/FR2958452B1/en
Publication of FR2958452A1 publication Critical patent/FR2958452A1/en
Application granted granted Critical
Publication of FR2958452B1 publication Critical patent/FR2958452B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
FR1052314A 2010-03-30 2010-03-30 JUNCTION TERMINATION EXTENSION RINGS Active FR2958452B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR1052314A FR2958452B1 (en) 2010-03-30 2010-03-30 JUNCTION TERMINATION EXTENSION RINGS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1052314A FR2958452B1 (en) 2010-03-30 2010-03-30 JUNCTION TERMINATION EXTENSION RINGS

Publications (2)

Publication Number Publication Date
FR2958452A1 FR2958452A1 (en) 2011-10-07
FR2958452B1 true FR2958452B1 (en) 2012-06-15

Family

ID=42633635

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1052314A Active FR2958452B1 (en) 2010-03-30 2010-03-30 JUNCTION TERMINATION EXTENSION RINGS

Country Status (1)

Country Link
FR (1) FR2958452B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106489210A (en) * 2015-01-14 2017-03-08 富士电机株式会社 Semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6107156B2 (en) 2012-05-21 2017-04-05 富士電機株式会社 Semiconductor device
CN107275391B (en) * 2017-07-07 2024-01-02 泰科天润半导体科技（北京）有限公司 Composite terminal structure for silicon carbide semiconductor power device and preparation method
US20220157951A1 (en) 2020-11-17 2022-05-19 Hamza Yilmaz High voltage edge termination structure for power semicondcutor devices and manufacturing method thereof
EP4358149A1 (en) * 2022-10-18 2024-04-24 Nexperia B.V. Semiconductor power device with improved junction termination extension

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3708057B2 (en) * 2001-07-17 2005-10-19 株式会社東芝 High voltage semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106489210A (en) * 2015-01-14 2017-03-08 富士电机株式会社 Semiconductor device
CN106489210B (en) * 2015-01-14 2019-08-13 富士电机株式会社 Semiconductor device

Also Published As

Publication number Publication date
FR2958452A1 (en) 2011-10-07

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Owner name: ALSTOM TRANSPORT TECHNOLOGIES, FR

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