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FR2957457B1 - Procede de fabrication d'un point memoire anti-fusible - Google Patents

Procede de fabrication d'un point memoire anti-fusible

Info

Publication number
FR2957457B1
FR2957457B1 FR1051760A FR1051760A FR2957457B1 FR 2957457 B1 FR2957457 B1 FR 2957457B1 FR 1051760 A FR1051760 A FR 1051760A FR 1051760 A FR1051760 A FR 1051760A FR 2957457 B1 FR2957457 B1 FR 2957457B1
Authority
FR
France
Prior art keywords
fuse
memory point
manufacturing memory
point anti
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1051760A
Other languages
English (en)
Other versions
FR2957457A1 (fr
Inventor
Philippe Candelier
Roux Elise Le
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR1051760A priority Critical patent/FR2957457B1/fr
Priority to US13/038,630 priority patent/US8470645B2/en
Publication of FR2957457A1 publication Critical patent/FR2957457A1/fr
Application granted granted Critical
Publication of FR2957457B1 publication Critical patent/FR2957457B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
FR1051760A 2010-03-11 2010-03-11 Procede de fabrication d'un point memoire anti-fusible Expired - Fee Related FR2957457B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1051760A FR2957457B1 (fr) 2010-03-11 2010-03-11 Procede de fabrication d'un point memoire anti-fusible
US13/038,630 US8470645B2 (en) 2010-03-11 2011-03-02 Method for manufacturing an antifuse memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1051760A FR2957457B1 (fr) 2010-03-11 2010-03-11 Procede de fabrication d'un point memoire anti-fusible

Publications (2)

Publication Number Publication Date
FR2957457A1 FR2957457A1 (fr) 2011-09-16
FR2957457B1 true FR2957457B1 (fr) 2013-03-01

Family

ID=43033260

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1051760A Expired - Fee Related FR2957457B1 (fr) 2010-03-11 2010-03-11 Procede de fabrication d'un point memoire anti-fusible

Country Status (2)

Country Link
US (1) US8470645B2 (fr)
FR (1) FR2957457B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103456710B (zh) * 2012-06-04 2016-06-01 中芯国际集成电路制造(上海)有限公司 Mos器件及其制造方法
US9761595B2 (en) * 2013-02-21 2017-09-12 Infineon Technologies Ag One-time programming device and a semiconductor device
KR102633049B1 (ko) * 2016-01-08 2024-02-06 삼성전자주식회사 반도체 소자
US9778868B1 (en) 2016-06-01 2017-10-03 Ge Aviation Systems Llc Data recorder for permanently storing pre-event data
US11189356B2 (en) 2020-02-27 2021-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. One-time-programmable memory
CN113497043B (zh) * 2020-04-08 2023-12-12 长鑫存储技术有限公司 反熔丝单元

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040051162A1 (en) * 2002-09-13 2004-03-18 International Business Machines Corporation Structure and method of providing reduced programming voltage antifuse
US20060203591A1 (en) * 2005-03-11 2006-09-14 Lee Dong K One time programmable read-only memory comprised of fuse and two selection transistors
JP4249774B2 (ja) * 2006-10-13 2009-04-08 エルピーダメモリ株式会社 半導体装置の製造方法
JP4510057B2 (ja) * 2007-06-21 2010-07-21 株式会社東芝 不揮発性半導体記憶装置
JP5238458B2 (ja) * 2008-11-04 2013-07-17 株式会社東芝 不揮発性半導体記憶装置
US8284597B2 (en) * 2010-05-06 2012-10-09 Macronix International Co., Ltd. Diode memory
US8178915B1 (en) * 2011-03-23 2012-05-15 Texas Instruments Incorporated Unitary floating-gate electrode with both N-type and P-type gates

Also Published As

Publication number Publication date
US8470645B2 (en) 2013-06-25
FR2957457A1 (fr) 2011-09-16
US20110223723A1 (en) 2011-09-15

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20131129