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FR2947952B1 - PHOTO-DETECTOR DEVICE AND METHOD FOR PRODUCING A PHOTO-DETECTOR DEVICE - Google Patents

PHOTO-DETECTOR DEVICE AND METHOD FOR PRODUCING A PHOTO-DETECTOR DEVICE

Info

Publication number
FR2947952B1
FR2947952B1 FR0954686A FR0954686A FR2947952B1 FR 2947952 B1 FR2947952 B1 FR 2947952B1 FR 0954686 A FR0954686 A FR 0954686A FR 0954686 A FR0954686 A FR 0954686A FR 2947952 B1 FR2947952 B1 FR 2947952B1
Authority
FR
France
Prior art keywords
photo
detector device
producing
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0954686A
Other languages
French (fr)
Other versions
FR2947952A1 (en
Inventor
Pierre Gidon
Benoit Giffard
Norbert Moussy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0954686A priority Critical patent/FR2947952B1/en
Priority to CN2010800305777A priority patent/CN102473713A/en
Priority to US13/381,435 priority patent/US8835924B2/en
Priority to JP2012518930A priority patent/JP2012533168A/en
Priority to EP10728234.5A priority patent/EP2452361B1/en
Priority to PCT/EP2010/059518 priority patent/WO2011003843A1/en
Publication of FR2947952A1 publication Critical patent/FR2947952A1/en
Application granted granted Critical
Publication of FR2947952B1 publication Critical patent/FR2947952B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
FR0954686A 2009-07-07 2009-07-07 PHOTO-DETECTOR DEVICE AND METHOD FOR PRODUCING A PHOTO-DETECTOR DEVICE Expired - Fee Related FR2947952B1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR0954686A FR2947952B1 (en) 2009-07-07 2009-07-07 PHOTO-DETECTOR DEVICE AND METHOD FOR PRODUCING A PHOTO-DETECTOR DEVICE
CN2010800305777A CN102473713A (en) 2009-07-07 2010-07-05 Photo-detector device and method of producing a photo-detector device
US13/381,435 US8835924B2 (en) 2009-07-07 2010-07-05 Photo-detecting device and method of making a photo-detecting device
JP2012518930A JP2012533168A (en) 2009-07-07 2010-07-05 Photodetection device and method for producing photodetection device
EP10728234.5A EP2452361B1 (en) 2009-07-07 2010-07-05 Photo-detector device and method of producing a photo-detector device
PCT/EP2010/059518 WO2011003843A1 (en) 2009-07-07 2010-07-05 Photo-detector device and method of producing a photo-detector device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0954686A FR2947952B1 (en) 2009-07-07 2009-07-07 PHOTO-DETECTOR DEVICE AND METHOD FOR PRODUCING A PHOTO-DETECTOR DEVICE

Publications (2)

Publication Number Publication Date
FR2947952A1 FR2947952A1 (en) 2011-01-14
FR2947952B1 true FR2947952B1 (en) 2011-11-25

Family

ID=42016937

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0954686A Expired - Fee Related FR2947952B1 (en) 2009-07-07 2009-07-07 PHOTO-DETECTOR DEVICE AND METHOD FOR PRODUCING A PHOTO-DETECTOR DEVICE

Country Status (6)

Country Link
US (1) US8835924B2 (en)
EP (1) EP2452361B1 (en)
JP (1) JP2012533168A (en)
CN (1) CN102473713A (en)
FR (1) FR2947952B1 (en)
WO (1) WO2011003843A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2966976B1 (en) * 2010-11-03 2016-07-29 Commissariat Energie Atomique VISIBLE AND INFRARED MULTISPECTRAL MONOLITHIC IMAGER
JP5556823B2 (en) * 2012-01-13 2014-07-23 株式会社ニコン Solid-state imaging device and electronic camera
WO2016002576A1 (en) * 2014-07-03 2016-01-07 ソニー株式会社 Solid-state imaging device and electronic device
KR102355558B1 (en) * 2014-07-31 2022-01-27 삼성전자주식회사 Image sensor
US9508681B2 (en) * 2014-12-22 2016-11-29 Google Inc. Stacked semiconductor chip RGBZ sensor
EP3254661B1 (en) * 2015-02-03 2020-04-01 Curaco, Inc. Excreta disposal apparatus provided with rotary nozzle
CN109276268A (en) * 2018-11-21 2019-01-29 京东方科技集团股份有限公司 X-ray detection device and manufacturing method thereof

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4011016A (en) 1974-04-30 1977-03-08 Martin Marietta Corporation Semiconductor radiation wavelength detector
US4581625A (en) * 1983-12-19 1986-04-08 Atlantic Richfield Company Vertically integrated solid state color imager
US4665468A (en) * 1984-07-10 1987-05-12 Nec Corporation Module having a ceramic multi-layer substrate and a multi-layer circuit thereupon, and process for manufacturing the same
US4785186A (en) * 1986-10-21 1988-11-15 Xerox Corporation Amorphous silicon ionizing particle detectors
US6606120B1 (en) 1998-04-24 2003-08-12 Foveon, Inc. Multiple storage node full color active pixel sensors
FR2838561B1 (en) 2002-04-12 2004-09-17 Commissariat Energie Atomique PHOTODECTOR MATRIX, PIXEL ISOLATED BY WALLS, HYBRIDED ON A READING CIRCUIT
FR2838565B1 (en) 2002-04-12 2004-06-25 Commissariat Energie Atomique PHOTODETECTORS MATRIX, ISOLATED PIXELS AND STORAGE GRID, HYBRIDED ON A READING CIRCUIT
JP2005268609A (en) 2004-03-19 2005-09-29 Fuji Photo Film Co Ltd Multi-layered multi-pixel imaging device and television camera
JP4533667B2 (en) 2004-05-28 2010-09-01 富士フイルム株式会社 Photoelectric conversion film stack type solid-state imaging device
JP4714428B2 (en) * 2004-05-28 2011-06-29 富士フイルム株式会社 Photoelectric conversion film stacked solid-state imaging device and method for manufacturing the same
JP2006032670A (en) 2004-07-16 2006-02-02 Matsushita Electric Ind Co Ltd Semiconductor light receiving element and manufacturing method thereof
KR100697279B1 (en) 2005-02-03 2007-03-20 삼성전자주식회사 Image sensor having vertical photodetector and manufacturing method thereof
WO2007061175A1 (en) 2005-09-13 2007-05-31 Hanvision Co., Ltd. Method of fabricating image sensor photodiodes using a multi-layer substrate and contact method and the structure thereof
US8766385B2 (en) 2006-07-25 2014-07-01 Commissariat A L'energie Atomique Et Aux Energies Alternatives Filtering matrix structure, associated image sensor and 3D mapping device
FR2904432B1 (en) 2006-07-25 2008-10-24 Commissariat Energie Atomique OPTICAL FILTRATION MATRIX STRUCTURE AND IMAGE SENSOR THEREFOR
JP2008066402A (en) * 2006-09-05 2008-03-21 Fujifilm Corp Imaging device and imaging apparatus
KR100812078B1 (en) * 2006-09-26 2008-03-07 동부일렉트로닉스 주식회사 Image sensor and its manufacturing method
FR2924235B1 (en) 2007-11-27 2010-08-20 Commissariat Energie Atomique VISIBLE IMAGING DEVICE WITH COLOR FILTER
FR2924803A1 (en) 2007-12-11 2009-06-12 Commissariat Energie Atomique INTERFERENTIAL SPECTROSCOPIC ANALYSIS DEVICE
CN100541831C (en) * 2007-12-28 2009-09-16 中国科学院上海技术物理研究所 Back-illuminated InGaAs micro-mesa linear array or area array detector chip and its fabrication process
FR2935839B1 (en) 2008-09-05 2011-08-05 Commissariat Energie Atomique CMOS IMAGE SENSOR WITH LIGHT REFLECTION

Also Published As

Publication number Publication date
EP2452361A1 (en) 2012-05-16
JP2012533168A (en) 2012-12-20
WO2011003843A1 (en) 2011-01-13
US8835924B2 (en) 2014-09-16
FR2947952A1 (en) 2011-01-14
US20120097946A1 (en) 2012-04-26
CN102473713A (en) 2012-05-23
EP2452361B1 (en) 2013-05-08

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Legal Events

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Effective date: 20150331