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FR2946036B1 - Procede d'integration de micro-interrupteurs de type mems sur des substrats en gan comportant des composants electroniques de puissance - Google Patents

Procede d'integration de micro-interrupteurs de type mems sur des substrats en gan comportant des composants electroniques de puissance

Info

Publication number
FR2946036B1
FR2946036B1 FR0902522A FR0902522A FR2946036B1 FR 2946036 B1 FR2946036 B1 FR 2946036B1 FR 0902522 A FR0902522 A FR 0902522A FR 0902522 A FR0902522 A FR 0902522A FR 2946036 B1 FR2946036 B1 FR 2946036B1
Authority
FR
France
Prior art keywords
electronic power
power components
type micro
micro switches
gan substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0902522A
Other languages
English (en)
Other versions
FR2946036A1 (fr
Inventor
Afshin Ziaei
Baillif Matthieu Le
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Priority to FR0902522A priority Critical patent/FR2946036B1/fr
Priority to PCT/EP2010/056278 priority patent/WO2010136322A1/fr
Priority to EP10718178A priority patent/EP2566807A1/fr
Priority to US13/696,569 priority patent/US8859318B2/en
Publication of FR2946036A1 publication Critical patent/FR2946036A1/fr
Application granted granted Critical
Publication of FR2946036B1 publication Critical patent/FR2946036B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/016—Switches characterised by the shape having a bridge fixed on two ends and connected to one or more dimples
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Pressure Sensors (AREA)
FR0902522A 2009-05-26 2009-05-26 Procede d'integration de micro-interrupteurs de type mems sur des substrats en gan comportant des composants electroniques de puissance Active FR2946036B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0902522A FR2946036B1 (fr) 2009-05-26 2009-05-26 Procede d'integration de micro-interrupteurs de type mems sur des substrats en gan comportant des composants electroniques de puissance
PCT/EP2010/056278 WO2010136322A1 (fr) 2009-05-26 2010-05-07 PROCEDE D'INTEGRATION DE MICRO-INTERRUPTEURS DE TYPE MEMS SUR DES SUBSTRATS EN GaN COMPORTANT DES COMPOSANTS ELECTRONIQUES DE PUISSANCE
EP10718178A EP2566807A1 (fr) 2009-05-26 2010-05-07 PROCEDE D'INTEGRATION DE MICRO-INTERRUPTEURS DE TYPE MEMS SUR DES SUBSTRATS EN GaN COMPORTANT DES COMPOSANTS ELECTRONIQUES DE PUISSANCE
US13/696,569 US8859318B2 (en) 2009-05-26 2010-05-07 Method for integrating MEMS microswitches on GaN substrates comprising electronic power components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0902522A FR2946036B1 (fr) 2009-05-26 2009-05-26 Procede d'integration de micro-interrupteurs de type mems sur des substrats en gan comportant des composants electroniques de puissance

Publications (2)

Publication Number Publication Date
FR2946036A1 FR2946036A1 (fr) 2010-12-03
FR2946036B1 true FR2946036B1 (fr) 2011-11-25

Family

ID=41460168

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0902522A Active FR2946036B1 (fr) 2009-05-26 2009-05-26 Procede d'integration de micro-interrupteurs de type mems sur des substrats en gan comportant des composants electroniques de puissance

Country Status (4)

Country Link
US (1) US8859318B2 (fr)
EP (1) EP2566807A1 (fr)
FR (1) FR2946036B1 (fr)
WO (1) WO2010136322A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9917244B2 (en) 2014-06-17 2018-03-13 The Regents Of The University Of Michigan Resonant body high electron mobility transistor
US9798132B2 (en) * 2014-06-17 2017-10-24 Infineon Technologies Ag Membrane structures for microelectromechanical pixel and display devices and systems, and methods for forming membrane structures and related devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232150B1 (en) * 1998-12-03 2001-05-15 The Regents Of The University Of Michigan Process for making microstructures and microstructures made thereby
CN1292447C (zh) * 2001-11-09 2006-12-27 图恩斯通系统公司 具有三层横梁的mems器件
US7514759B1 (en) * 2004-04-19 2009-04-07 Hrl Laboratories, Llc Piezoelectric MEMS integration with GaN technology
WO2007131796A2 (fr) * 2006-05-17 2007-11-22 Microgan Gmbh Actionneurs micromécaniques en semi-conducteurs à base de nitrures du groupe iii

Also Published As

Publication number Publication date
WO2010136322A1 (fr) 2010-12-02
EP2566807A1 (fr) 2013-03-13
US8859318B2 (en) 2014-10-14
FR2946036A1 (fr) 2010-12-03
US20130056751A1 (en) 2013-03-07

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