FR2909484B1 - Systeme et procede pour limiter les effets d'arcs dans des matrices d'emetteurs de champs - Google Patents
Systeme et procede pour limiter les effets d'arcs dans des matrices d'emetteurs de champsInfo
- Publication number
- FR2909484B1 FR2909484B1 FR0759214A FR0759214A FR2909484B1 FR 2909484 B1 FR2909484 B1 FR 2909484B1 FR 0759214 A FR0759214 A FR 0759214A FR 0759214 A FR0759214 A FR 0759214A FR 2909484 B1 FR2909484 B1 FR 2909484B1
- Authority
- FR
- France
- Prior art keywords
- arcs
- limiting
- effects
- field emitter
- matrices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
- H01J1/3044—Point emitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/06—Cathodes
- H01J35/065—Field emission, photo emission or secondary emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2235/00—X-ray tubes
- H01J2235/06—Cathode assembly
- H01J2235/068—Multi-cathode assembly
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/567,095 US8274205B2 (en) | 2006-12-05 | 2006-12-05 | System and method for limiting arc effects in field emitter arrays |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2909484A1 FR2909484A1 (fr) | 2008-06-06 |
FR2909484B1 true FR2909484B1 (fr) | 2011-08-26 |
Family
ID=39420370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0759214A Expired - Fee Related FR2909484B1 (fr) | 2006-12-05 | 2007-11-22 | Systeme et procede pour limiter les effets d'arcs dans des matrices d'emetteurs de champs |
Country Status (2)
Country | Link |
---|---|
US (1) | US8274205B2 (fr) |
FR (1) | FR2909484B1 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130100630A (ko) * | 2012-03-02 | 2013-09-11 | 삼성전자주식회사 | 전자 방출 소자 및 이를 포함한 엑스선 발생 장치 |
KR102076380B1 (ko) * | 2012-03-16 | 2020-02-11 | 나녹스 이미징 피엘씨 | 전자 방출 구조체를 갖는 장치 |
KR20140106291A (ko) * | 2013-02-26 | 2014-09-03 | 삼성전자주식회사 | 평판형 엑스선 발생기를 구비한 엑스선 영상 시스템, 엑스선 발생기 및 전자 방출소자 |
KR102106075B1 (ko) * | 2013-09-09 | 2020-04-29 | 삼성전자주식회사 | 탄소나노튜브 전자방출원을 가진 엑스선 발생장치의 에이징 방법 |
WO2018092939A1 (fr) * | 2016-11-17 | 2018-05-24 | 주식회사 바텍 | Dispositif source de rayons x à émission de champ |
CN113675057B (zh) * | 2021-07-12 | 2023-11-03 | 郑州大学 | 一种自对准石墨烯场发射栅极结构及其制备方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0696042B1 (fr) | 1994-08-01 | 1999-12-01 | Motorola, Inc. | Suppresseur d'arc pour dispositif à émission de champ |
JP3171785B2 (ja) * | 1996-06-20 | 2001-06-04 | 富士通株式会社 | 薄型表示装置、及びそれに用いる電界放出陰極の製造方法 |
US6015323A (en) * | 1997-01-03 | 2000-01-18 | Micron Technology, Inc. | Field emission display cathode assembly government rights |
US6013986A (en) * | 1997-06-30 | 2000-01-11 | Candescent Technologies Corporation | Electron-emitting device having multi-layer resistor |
US6657376B1 (en) * | 1999-06-01 | 2003-12-02 | Micron Technology, Inc. | Electron emission devices and field emission display devices having buffer layer of microcrystalline silicon |
US6635983B1 (en) * | 1999-09-02 | 2003-10-21 | Micron Technology, Inc. | Nitrogen and phosphorus doped amorphous silicon as resistor for field emission device baseplate |
US6590322B2 (en) * | 2000-01-07 | 2003-07-08 | The United States Of America As Represented By The Secretary Of The Navy | Low gate current field emitter cell and array with vertical thin-film-edge emitter |
US7030550B2 (en) * | 2001-02-01 | 2006-04-18 | Sharp Kabushiki Kaisha | Electron emission device with multi-layered fate electrode |
US6670629B1 (en) | 2002-09-06 | 2003-12-30 | Ge Medical Systems Global Technology Company, Llc | Insulated gate field emitter array |
US6750470B1 (en) | 2002-12-12 | 2004-06-15 | General Electric Company | Robust field emitter array design |
-
2006
- 2006-12-05 US US11/567,095 patent/US8274205B2/en not_active Expired - Fee Related
-
2007
- 2007-11-22 FR FR0759214A patent/FR2909484B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8274205B2 (en) | 2012-09-25 |
FR2909484A1 (fr) | 2008-06-06 |
US20080129177A1 (en) | 2008-06-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 9 |
|
PLFP | Fee payment |
Year of fee payment: 10 |
|
PLFP | Fee payment |
Year of fee payment: 11 |
|
PLFP | Fee payment |
Year of fee payment: 12 |
|
PLFP | Fee payment |
Year of fee payment: 13 |
|
ST | Notification of lapse |
Effective date: 20210706 |