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FR2887076B1 - Capteur d'image a substrat semiconducteur aminci avec metallisation arriere - Google Patents

Capteur d'image a substrat semiconducteur aminci avec metallisation arriere

Info

Publication number
FR2887076B1
FR2887076B1 FR0505929A FR0505929A FR2887076B1 FR 2887076 B1 FR2887076 B1 FR 2887076B1 FR 0505929 A FR0505929 A FR 0505929A FR 0505929 A FR0505929 A FR 0505929A FR 2887076 B1 FR2887076 B1 FR 2887076B1
Authority
FR
France
Prior art keywords
imagine
semiconductor substrate
image sensor
substrate image
rear metallization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0505929A
Other languages
English (en)
Other versions
FR2887076A1 (fr
Inventor
Pierre Blanchard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
Atmel Grenoble SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Grenoble SA filed Critical Atmel Grenoble SA
Priority to FR0505929A priority Critical patent/FR2887076B1/fr
Priority to PCT/EP2006/062043 priority patent/WO2006131427A2/fr
Publication of FR2887076A1 publication Critical patent/FR2887076A1/fr
Application granted granted Critical
Publication of FR2887076B1 publication Critical patent/FR2887076B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
FR0505929A 2005-06-10 2005-06-10 Capteur d'image a substrat semiconducteur aminci avec metallisation arriere Expired - Fee Related FR2887076B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0505929A FR2887076B1 (fr) 2005-06-10 2005-06-10 Capteur d'image a substrat semiconducteur aminci avec metallisation arriere
PCT/EP2006/062043 WO2006131427A2 (fr) 2005-06-10 2006-05-04 Capteur d'image a substrat semiconducteur aminci avec metallisation arriere

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0505929A FR2887076B1 (fr) 2005-06-10 2005-06-10 Capteur d'image a substrat semiconducteur aminci avec metallisation arriere

Publications (2)

Publication Number Publication Date
FR2887076A1 FR2887076A1 (fr) 2006-12-15
FR2887076B1 true FR2887076B1 (fr) 2007-08-31

Family

ID=35744691

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0505929A Expired - Fee Related FR2887076B1 (fr) 2005-06-10 2005-06-10 Capteur d'image a substrat semiconducteur aminci avec metallisation arriere

Country Status (2)

Country Link
FR (1) FR2887076B1 (fr)
WO (1) WO2006131427A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2910705B1 (fr) * 2006-12-20 2009-02-27 E2V Semiconductors Soc Par Act Structure de plots de connexion pour capteur d'image sur substrat aminci
FR3077678B1 (fr) 2018-02-07 2022-10-21 St Microelectronics Rousset Procede de detection d'une atteinte a l'integrite d'un substrat semi-conducteur d'un circuit integre depuis sa face arriere, et dispositif correspondant
CN112103304B (zh) * 2020-09-22 2024-02-09 武汉新芯集成电路制造有限公司 背照式传感器及其制造方法、版图结构

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19838430C2 (de) * 1998-08-24 2002-02-28 Fraunhofer Ges Forschung Verfahren zur Herstellung eines Arrays von Photodetektoren
EP1284021A4 (fr) * 2000-04-20 2008-08-13 Digirad Corp Fabrication de photodiodes illumin es sur l'envers courant de fuite faible
FR2829292B1 (fr) * 2001-08-31 2004-09-10 Atmel Grenoble Sa Procede de fabrication de capteur d'image couleur avec substrat de support soude plot sur plot
FR2829291B1 (fr) * 2001-08-31 2005-02-04 Atmel Grenoble Sa Procede de fabrication de capteur d'image couleur avec ouvertures de contact creusees avant amincissement
US6933489B2 (en) * 2002-05-10 2005-08-23 Hamamatsu Photonics K.K. Back illuminated photodiode array and method of manufacturing the same

Also Published As

Publication number Publication date
WO2006131427A2 (fr) 2006-12-14
WO2006131427A3 (fr) 2007-03-29
FR2887076A1 (fr) 2006-12-15

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Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 12

PLFP Fee payment

Year of fee payment: 13

PLFP Fee payment

Year of fee payment: 14

CD Change of name or company name

Owner name: TELEDYNE E2V SEMICONDUCTORS SAS, FR

Effective date: 20180907

CJ Change in legal form

Effective date: 20180907

ST Notification of lapse

Effective date: 20200206