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FR2885733B1 - Structure de transistor a trois grilles - Google Patents

Structure de transistor a trois grilles

Info

Publication number
FR2885733B1
FR2885733B1 FR0504891A FR0504891A FR2885733B1 FR 2885733 B1 FR2885733 B1 FR 2885733B1 FR 0504891 A FR0504891 A FR 0504891A FR 0504891 A FR0504891 A FR 0504891A FR 2885733 B1 FR2885733 B1 FR 2885733B1
Authority
FR
France
Prior art keywords
transistor structure
grid transistor
grid
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0504891A
Other languages
English (en)
Other versions
FR2885733A1 (fr
Inventor
Philippe Coronel
Romain Wacquez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR0504891A priority Critical patent/FR2885733B1/fr
Priority to US11/434,561 priority patent/US7420253B2/en
Publication of FR2885733A1 publication Critical patent/FR2885733A1/fr
Application granted granted Critical
Publication of FR2885733B1 publication Critical patent/FR2885733B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/023—Manufacture or treatment of FETs having insulated gates [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/292—Non-planar channels of IGFETs
FR0504891A 2005-05-16 2005-05-16 Structure de transistor a trois grilles Expired - Fee Related FR2885733B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0504891A FR2885733B1 (fr) 2005-05-16 2005-05-16 Structure de transistor a trois grilles
US11/434,561 US7420253B2 (en) 2005-05-16 2006-05-15 Three-gate transistor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0504891A FR2885733B1 (fr) 2005-05-16 2005-05-16 Structure de transistor a trois grilles

Publications (2)

Publication Number Publication Date
FR2885733A1 FR2885733A1 (fr) 2006-11-17
FR2885733B1 true FR2885733B1 (fr) 2008-03-07

Family

ID=35608271

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0504891A Expired - Fee Related FR2885733B1 (fr) 2005-05-16 2005-05-16 Structure de transistor a trois grilles

Country Status (2)

Country Link
US (1) US7420253B2 (fr)
FR (1) FR2885733B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7700473B2 (en) * 2007-04-09 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Gated semiconductor device and method of fabricating same
US8445953B2 (en) 2009-07-08 2013-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Structure for flash memory cells
KR101476022B1 (ko) * 2010-05-26 2014-12-24 도요타지도샤가부시키가이샤 고정자 제조 방법
US10536131B2 (en) * 2017-06-20 2020-01-14 Skyworks Solutions, Inc. Surface acoustic wave device with thermally conductive layer

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180680A (en) * 1991-05-17 1993-01-19 United Microelectronics Corporation Method of fabricating electrically erasable read only memory cell
JP2734962B2 (ja) * 1993-12-27 1998-04-02 日本電気株式会社 薄膜トランジスタ及びその製造方法
US5705415A (en) * 1994-10-04 1998-01-06 Motorola, Inc. Process for forming an electrically programmable read-only memory cell
JPH08204191A (ja) * 1995-01-20 1996-08-09 Sony Corp 電界効果トランジスタ及びその製造方法
US6562665B1 (en) * 2000-10-16 2003-05-13 Advanced Micro Devices, Inc. Fabrication of a field effect transistor with a recess in a semiconductor pillar in SOI technology
US6413802B1 (en) * 2000-10-23 2002-07-02 The Regents Of The University Of California Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
DE10131276B4 (de) * 2001-06-28 2007-08-02 Infineon Technologies Ag Feldeffekttransistor und Verfahren zu seiner Herstellung
US7259425B2 (en) * 2003-01-23 2007-08-21 Advanced Micro Devices, Inc. Tri-gate and gate around MOSFET devices and methods for making same
US6844238B2 (en) * 2003-03-26 2005-01-18 Taiwan Semiconductor Manufacturing Co., Ltd Multiple-gate transistors with improved gate control
US7173305B2 (en) * 2003-04-08 2007-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned contact for silicon-on-insulator devices
US7154118B2 (en) * 2004-03-31 2006-12-26 Intel Corporation Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
KR100541657B1 (ko) * 2004-06-29 2006-01-11 삼성전자주식회사 멀티 게이트 트랜지스터의 제조방법 및 이에 의해 제조된멀티 게이트 트랜지스터
US7193279B2 (en) * 2005-01-18 2007-03-20 Intel Corporation Non-planar MOS structure with a strained channel region

Also Published As

Publication number Publication date
FR2885733A1 (fr) 2006-11-17
US7420253B2 (en) 2008-09-02
US20070018227A1 (en) 2007-01-25

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20140131