FR2880472B1 - Procede et systeme de diffusometrie - Google Patents
Procede et systeme de diffusometrieInfo
- Publication number
- FR2880472B1 FR2880472B1 FR0513463A FR0513463A FR2880472B1 FR 2880472 B1 FR2880472 B1 FR 2880472B1 FR 0513463 A FR0513463 A FR 0513463A FR 0513463 A FR0513463 A FR 0513463A FR 2880472 B1 FR2880472 B1 FR 2880472B1
- Authority
- FR
- France
- Prior art keywords
- diffusometry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4788—Diffraction
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW093141298A TWI269870B (en) | 2004-12-30 | 2004-12-30 | Method for deciding structure parameters of a grating |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2880472A1 FR2880472A1 (fr) | 2006-07-07 |
FR2880472B1 true FR2880472B1 (fr) | 2014-02-21 |
Family
ID=36589713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0513463A Expired - Fee Related FR2880472B1 (fr) | 2004-12-30 | 2005-12-29 | Procede et systeme de diffusometrie |
Country Status (6)
Country | Link |
---|---|
US (1) | US7532317B2 (fr) |
JP (1) | JP2006226994A (fr) |
KR (1) | KR101257954B1 (fr) |
DE (1) | DE102005063087A1 (fr) |
FR (1) | FR2880472B1 (fr) |
TW (1) | TWI269870B (fr) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000072440A (ko) * | 2000-08-25 | 2000-12-05 | 정권수 | 슬래그와 석탄연소재를 이용한 아스콘채움재 제조방법 |
US20080144036A1 (en) * | 2006-12-19 | 2008-06-19 | Asml Netherlands B.V. | Method of measurement, an inspection apparatus and a lithographic apparatus |
US7791727B2 (en) | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
TWI339778B (en) * | 2006-07-12 | 2011-04-01 | Ind Tech Res Inst | Method for designing gratings |
US7710572B2 (en) * | 2006-11-30 | 2010-05-04 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
US8798966B1 (en) * | 2007-01-03 | 2014-08-05 | Kla-Tencor Corporation | Measuring critical dimensions of a semiconductor structure |
US7858404B2 (en) | 2007-03-14 | 2010-12-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Measurement of overlay offset in semiconductor processing |
JP4968470B2 (ja) * | 2007-10-11 | 2012-07-04 | 大日本印刷株式会社 | 周期構造測定方法及びその方法を用いた周期構造測定装置 |
NL1036098A1 (nl) * | 2007-11-08 | 2009-05-11 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus lithographic, processing cell and device manufacturing method. |
TWI364784B (en) | 2008-06-13 | 2012-05-21 | Ind Tech Res Inst | Method for designing overlay targets and method and system for measuring overlay error using the same |
US8214771B2 (en) * | 2009-01-08 | 2012-07-03 | Kla-Tencor Corporation | Scatterometry metrology target design optimization |
US20110276319A1 (en) * | 2010-05-06 | 2011-11-10 | Jonathan Michael Madsen | Determination of material optical properties for optical metrology of structures |
US9885962B2 (en) * | 2013-10-28 | 2018-02-06 | Kla-Tencor Corporation | Methods and apparatus for measuring semiconductor device overlay using X-ray metrology |
US10311198B2 (en) * | 2014-02-16 | 2019-06-04 | Nova Measuring Instruments Ltd. | Overlay design optimization |
US10210606B2 (en) * | 2014-10-14 | 2019-02-19 | Kla-Tencor Corporation | Signal response metrology for image based and scatterometry overlay measurements |
NL2016472A (en) * | 2015-03-25 | 2016-09-30 | Asml Netherlands Bv | Metrology Methods, Metrology Apparatus and Device Manufacturing Method. |
US9995689B2 (en) * | 2015-05-22 | 2018-06-12 | Nanometrics Incorporated | Optical metrology using differential fitting |
US10345721B1 (en) | 2015-06-16 | 2019-07-09 | Kla-Tencor Corporation | Measurement library optimization in semiconductor metrology |
CN105933697B (zh) * | 2016-06-30 | 2017-10-27 | 北京邮电大学 | 一种光栅参数输出的方法及装置 |
US11067389B2 (en) * | 2018-03-13 | 2021-07-20 | Kla Corporation | Overlay metrology system and method |
US12131111B2 (en) | 2021-03-01 | 2024-10-29 | Changxin Memory Technologies, Inc. | Method, apparatus and device for measuring semiconductor structure |
CN113029024B (zh) * | 2021-03-01 | 2021-11-16 | 长鑫存储技术有限公司 | 半导体结构的测量方法及设备 |
US20230194996A1 (en) * | 2021-12-17 | 2023-06-22 | Micron Technology, Inc. | Apparatuses and methods for diffraction base overlay measurements |
CN116379927B (zh) * | 2023-05-31 | 2023-08-29 | 湖南隆深氢能科技有限公司 | 应用于贴合生产线的精准检测方法、系统以及存储介质 |
CN117289562B (zh) * | 2023-11-22 | 2024-02-13 | 全芯智造技术有限公司 | 用于仿真套刻标记的方法、设备和介质 |
CN118464843B (zh) * | 2024-07-10 | 2024-11-15 | 杭州积海半导体有限公司 | 散射测量方法及散射测量装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6134011A (en) * | 1997-09-22 | 2000-10-17 | Hdi Instrumentation | Optical measurement system using polarized light |
IL130874A (en) * | 1999-07-09 | 2002-12-01 | Nova Measuring Instr Ltd | System and method for measuring pattern structures |
WO2002014840A2 (fr) * | 2000-08-10 | 2002-02-21 | Sensys Instruments Corporation | Procede d'interpolation de bases de donnees destine a la mesure optique de microstructures a diffraction |
US6943900B2 (en) * | 2000-09-15 | 2005-09-13 | Timbre Technologies, Inc. | Generation of a library of periodic grating diffraction signals |
US6900892B2 (en) * | 2000-12-19 | 2005-05-31 | Kla-Tencor Technologies Corporation | Parametric profiling using optical spectroscopic systems |
US6785638B2 (en) | 2001-08-06 | 2004-08-31 | Timbre Technologies, Inc. | Method and system of dynamic learning through a regression-based library generation process |
IL148484A (en) * | 2002-03-04 | 2008-11-26 | Nova Measuring Instr Ltd | Optical measurements of patterned structures |
US6842261B2 (en) * | 2002-08-26 | 2005-01-11 | Timbre Technologies, Inc. | Integrated circuit profile value determination |
-
2004
- 2004-12-30 TW TW093141298A patent/TWI269870B/zh not_active IP Right Cessation
-
2005
- 2005-12-28 US US11/319,677 patent/US7532317B2/en active Active
- 2005-12-29 FR FR0513463A patent/FR2880472B1/fr not_active Expired - Fee Related
- 2005-12-29 KR KR1020050133609A patent/KR101257954B1/ko not_active IP Right Cessation
- 2005-12-30 DE DE102005063087A patent/DE102005063087A1/de not_active Ceased
-
2006
- 2006-01-04 JP JP2006000041A patent/JP2006226994A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
TW200622351A (en) | 2006-07-01 |
KR20060079115A (ko) | 2006-07-05 |
TWI269870B (en) | 2007-01-01 |
DE102005063087A1 (de) | 2006-07-20 |
JP2006226994A (ja) | 2006-08-31 |
DE102005063087A9 (de) | 2006-11-23 |
US20060146347A1 (en) | 2006-07-06 |
KR101257954B1 (ko) | 2013-04-24 |
FR2880472A1 (fr) | 2006-07-07 |
US7532317B2 (en) | 2009-05-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
TQ | Partial transmission of property | ||
PLFP | Fee payment |
Year of fee payment: 11 |
|
PLFP | Fee payment |
Year of fee payment: 12 |
|
ST | Notification of lapse |
Effective date: 20180831 |