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FR2859488B1 - PROCESS FOR PRODUCING AT LEAST ONE CAVITY IN A MATERIAL - Google Patents

PROCESS FOR PRODUCING AT LEAST ONE CAVITY IN A MATERIAL

Info

Publication number
FR2859488B1
FR2859488B1 FR0310645A FR0310645A FR2859488B1 FR 2859488 B1 FR2859488 B1 FR 2859488B1 FR 0310645 A FR0310645 A FR 0310645A FR 0310645 A FR0310645 A FR 0310645A FR 2859488 B1 FR2859488 B1 FR 2859488B1
Authority
FR
France
Prior art keywords
cavity
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0310645A
Other languages
French (fr)
Other versions
FR2859488A1 (en
Inventor
Margrit Hanbucken
Wulf Wulfhekel
Dirk Sander
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR0310645A priority Critical patent/FR2859488B1/en
Priority to PCT/FR2004/050423 priority patent/WO2005023703A2/en
Publication of FR2859488A1 publication Critical patent/FR2859488A1/en
Application granted granted Critical
Publication of FR2859488B1 publication Critical patent/FR2859488B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00087—Holes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Micromachines (AREA)
  • Ceramic Products (AREA)
FR0310645A 2003-09-10 2003-09-10 PROCESS FOR PRODUCING AT LEAST ONE CAVITY IN A MATERIAL Expired - Fee Related FR2859488B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0310645A FR2859488B1 (en) 2003-09-10 2003-09-10 PROCESS FOR PRODUCING AT LEAST ONE CAVITY IN A MATERIAL
PCT/FR2004/050423 WO2005023703A2 (en) 2003-09-10 2004-09-10 Method for producing at least one cavity in a material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0310645A FR2859488B1 (en) 2003-09-10 2003-09-10 PROCESS FOR PRODUCING AT LEAST ONE CAVITY IN A MATERIAL

Publications (2)

Publication Number Publication Date
FR2859488A1 FR2859488A1 (en) 2005-03-11
FR2859488B1 true FR2859488B1 (en) 2006-02-17

Family

ID=34178878

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0310645A Expired - Fee Related FR2859488B1 (en) 2003-09-10 2003-09-10 PROCESS FOR PRODUCING AT LEAST ONE CAVITY IN A MATERIAL

Country Status (2)

Country Link
FR (1) FR2859488B1 (en)
WO (1) WO2005023703A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9989454B2 (en) 2013-10-04 2018-06-05 Axometrics, Inc. Method and apparatus for measuring parameters of optical anisotropy
CN107976410B (en) * 2017-12-28 2021-02-02 河北同光晶体有限公司 Method for identifying industrial bulk SiC single crystal form

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB725412A (en) * 1952-01-10 1955-03-02 Gen Electric Improvements relating to methods of making small apertures in crystals
US4008111A (en) * 1975-12-31 1977-02-15 International Business Machines Corporation AlN masking for selective etching of sapphire
JPS63305136A (en) * 1987-06-08 1988-12-13 Res Inst Electric Magnetic Alloys Polymer molding having honeycomb surface and its production
JP3183845B2 (en) * 1997-03-21 2001-07-09 財団法人ファインセラミックスセンター Method for producing carbon nanotube and carbon nanotube film
US6165874A (en) * 1997-07-03 2000-12-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon
US6504292B1 (en) * 1999-07-15 2003-01-07 Agere Systems Inc. Field emitting device comprising metallized nanostructures and method for making the same
DE60138002D1 (en) * 2000-01-21 2009-04-30 Fei Co FOCUSED ION RAYS WITH SPECIFIC FORM AND LOW DENSITY
SE0000271D0 (en) * 2000-01-28 2000-01-28 Acreo Ab A method for producing a semiconductor device of SiC
US6824655B2 (en) * 2001-08-27 2004-11-30 Credence Systems Corporation Process for charged particle beam micro-machining of copper

Also Published As

Publication number Publication date
WO2005023703A3 (en) 2005-06-30
FR2859488A1 (en) 2005-03-11
WO2005023703A2 (en) 2005-03-17

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20070531