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FR2840444B1 - Dispositif de memoire electriquement programmable de facon irreversible - Google Patents

Dispositif de memoire electriquement programmable de facon irreversible

Info

Publication number
FR2840444B1
FR2840444B1 FR0206651A FR0206651A FR2840444B1 FR 2840444 B1 FR2840444 B1 FR 2840444B1 FR 0206651 A FR0206651 A FR 0206651A FR 0206651 A FR0206651 A FR 0206651A FR 2840444 B1 FR2840444 B1 FR 2840444B1
Authority
FR
France
Prior art keywords
memory device
electrically programmable
device electrically
irreversible
programmable irreversible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0206651A
Other languages
English (en)
Other versions
FR2840444A1 (fr
Inventor
Philippe Gendrier
Daniel Caspar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0206651A priority Critical patent/FR2840444B1/fr
Priority to US10/449,921 priority patent/US6977836B2/en
Publication of FR2840444A1 publication Critical patent/FR2840444A1/fr
Application granted granted Critical
Publication of FR2840444B1 publication Critical patent/FR2840444B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
FR0206651A 2002-05-30 2002-05-30 Dispositif de memoire electriquement programmable de facon irreversible Expired - Fee Related FR2840444B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0206651A FR2840444B1 (fr) 2002-05-30 2002-05-30 Dispositif de memoire electriquement programmable de facon irreversible
US10/449,921 US6977836B2 (en) 2002-05-30 2003-05-30 Memory device that can be irreversibly programmed electrically

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0206651A FR2840444B1 (fr) 2002-05-30 2002-05-30 Dispositif de memoire electriquement programmable de facon irreversible

Publications (2)

Publication Number Publication Date
FR2840444A1 FR2840444A1 (fr) 2003-12-05
FR2840444B1 true FR2840444B1 (fr) 2005-04-01

Family

ID=29558852

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0206651A Expired - Fee Related FR2840444B1 (fr) 2002-05-30 2002-05-30 Dispositif de memoire electriquement programmable de facon irreversible

Country Status (2)

Country Link
US (1) US6977836B2 (fr)
FR (1) FR2840444B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8811060B2 (en) 2012-05-31 2014-08-19 International Business Machines Corporation Non-volatile memory crosspoint repair
JP6846238B2 (ja) * 2017-03-07 2021-03-24 東京エレクトロン株式会社 液滴吐出装置、液滴吐出方法、プログラム及びコンピュータ記憶媒体

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4499557A (en) * 1980-10-28 1985-02-12 Energy Conversion Devices, Inc. Programmable cell for use in programmable electronic arrays
US5241496A (en) * 1991-08-19 1993-08-31 Micron Technology, Inc. Array of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cells
US5148391A (en) * 1992-02-14 1992-09-15 Micron Technology, Inc. Nonvolatile, zero-power memory cell constructed with capacitor-like antifuses operable at less than power supply voltage
US5724282A (en) * 1996-09-06 1998-03-03 Micron Technology, Inc. System and method for an antifuse bank
JP2000123592A (ja) * 1998-10-19 2000-04-28 Mitsubishi Electric Corp 半導体装置
WO2000033316A1 (fr) * 1998-12-02 2000-06-08 Seiko Epson Corporation Procede de commande de memoire ferroelectrique remanente (feram) et dispositif de commande de cellule memoire

Also Published As

Publication number Publication date
FR2840444A1 (fr) 2003-12-05
US6977836B2 (en) 2005-12-20
US20040052148A1 (en) 2004-03-18

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090119