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FR2828767B1 - Transistor bipolaire a tension de claquage elevee - Google Patents

Transistor bipolaire a tension de claquage elevee

Info

Publication number
FR2828767B1
FR2828767B1 FR0110821A FR0110821A FR2828767B1 FR 2828767 B1 FR2828767 B1 FR 2828767B1 FR 0110821 A FR0110821 A FR 0110821A FR 0110821 A FR0110821 A FR 0110821A FR 2828767 B1 FR2828767 B1 FR 2828767B1
Authority
FR
France
Prior art keywords
bipolar transistor
breakdown voltage
high breakdown
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0110821A
Other languages
English (en)
Other versions
FR2828767A1 (fr
Inventor
Jean Claude Jacquet
Sylvain Delage
Didier Floriot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Priority to FR0110821A priority Critical patent/FR2828767B1/fr
Publication of FR2828767A1 publication Critical patent/FR2828767A1/fr
Application granted granted Critical
Publication of FR2828767B1 publication Critical patent/FR2828767B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
FR0110821A 2001-08-14 2001-08-14 Transistor bipolaire a tension de claquage elevee Expired - Fee Related FR2828767B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0110821A FR2828767B1 (fr) 2001-08-14 2001-08-14 Transistor bipolaire a tension de claquage elevee

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0110821A FR2828767B1 (fr) 2001-08-14 2001-08-14 Transistor bipolaire a tension de claquage elevee

Publications (2)

Publication Number Publication Date
FR2828767A1 FR2828767A1 (fr) 2003-02-21
FR2828767B1 true FR2828767B1 (fr) 2003-12-12

Family

ID=8866538

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0110821A Expired - Fee Related FR2828767B1 (fr) 2001-08-14 2001-08-14 Transistor bipolaire a tension de claquage elevee

Country Status (1)

Country Link
FR (1) FR2828767B1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4337474A (en) * 1978-08-31 1982-06-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
GB2173037A (en) * 1985-03-29 1986-10-01 Philips Electronic Associated Semiconductor devices employing conductivity modulation
IT1202311B (it) * 1985-12-11 1989-02-02 Sgs Microelettronica Spa Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante
DE69324003T2 (de) * 1993-06-28 1999-07-15 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Bipolar-Leistungstransistor mit hoher Kollektor-Durchbrucksspannung und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
FR2828767A1 (fr) 2003-02-21

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Legal Events

Date Code Title Description
ST Notification of lapse