FR2820545B1 - Procede et dispositif de verification d'un groupe de cellules de memoire non volatile - Google Patents
Procede et dispositif de verification d'un groupe de cellules de memoire non volatileInfo
- Publication number
- FR2820545B1 FR2820545B1 FR0101442A FR0101442A FR2820545B1 FR 2820545 B1 FR2820545 B1 FR 2820545B1 FR 0101442 A FR0101442 A FR 0101442A FR 0101442 A FR0101442 A FR 0101442A FR 2820545 B1 FR2820545 B1 FR 2820545B1
- Authority
- FR
- France
- Prior art keywords
- verifying
- group
- volatile memory
- memory cells
- volatile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/30—Accessing single arrays
- G11C29/34—Accessing multiple bits simultaneously
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0101442A FR2820545B1 (fr) | 2001-02-02 | 2001-02-02 | Procede et dispositif de verification d'un groupe de cellules de memoire non volatile |
US10/363,234 US6778440B2 (en) | 2001-02-02 | 2002-01-30 | Method and device for checking a group of cells in a non-volatile memory cells |
EP02701353A EP1356473A1 (fr) | 2001-02-02 | 2002-01-30 | Procede et dispositif de verification d'un groupe de cellules de memoire non volatile |
PCT/FR2002/000361 WO2002063632A1 (fr) | 2001-02-02 | 2002-01-30 | Procede et dispositif de verification d'un groupe de cellules de memoire non volatile |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0101442A FR2820545B1 (fr) | 2001-02-02 | 2001-02-02 | Procede et dispositif de verification d'un groupe de cellules de memoire non volatile |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2820545A1 FR2820545A1 (fr) | 2002-08-09 |
FR2820545B1 true FR2820545B1 (fr) | 2003-05-30 |
Family
ID=8859567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0101442A Expired - Fee Related FR2820545B1 (fr) | 2001-02-02 | 2001-02-02 | Procede et dispositif de verification d'un groupe de cellules de memoire non volatile |
Country Status (4)
Country | Link |
---|---|
US (1) | US6778440B2 (fr) |
EP (1) | EP1356473A1 (fr) |
FR (1) | FR2820545B1 (fr) |
WO (1) | WO2002063632A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007226380A (ja) * | 2006-02-22 | 2007-09-06 | Ricoh Co Ltd | 不揮発性メモリカード |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5172338B1 (en) * | 1989-04-13 | 1997-07-08 | Sandisk Corp | Multi-state eeprom read and write circuits and techniques |
JP2863012B2 (ja) * | 1990-12-18 | 1999-03-03 | 三菱電機株式会社 | 半導体記憶装置 |
US5361227A (en) * | 1991-12-19 | 1994-11-01 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and memory system using the same |
FR2690751B1 (fr) * | 1992-04-30 | 1994-06-17 | Sgs Thomson Microelectronics | Procede et circuit de detection de fuites de courant dans une ligne de bit. |
US5600593A (en) * | 1994-12-06 | 1997-02-04 | National Semiconductor Corporation | Apparatus and method for reducing erased threshold voltage distribution in flash memory arrays |
DE69629669T2 (de) * | 1996-06-18 | 2004-07-08 | Stmicroelectronics S.R.L., Agrate Brianza | Leseverfahren und -schaltung für nichtflüchtige Speicherzellen mit Entzerrerschaltung |
JP3501916B2 (ja) * | 1997-02-28 | 2004-03-02 | シャープ株式会社 | 半導体記憶装置およびその一括消去ベリファイ方法 |
JP3920501B2 (ja) * | 1999-04-02 | 2007-05-30 | 株式会社東芝 | 不揮発性半導体記憶装置及びそのデータ消去制御方法 |
US6785689B1 (en) * | 2001-06-28 | 2004-08-31 | I2 Technologies Us, Inc. | Consolidation of multiple source content schemas into a single target content schema |
US7149746B2 (en) * | 2002-05-10 | 2006-12-12 | International Business Machines Corporation | Method for schema mapping and data transformation |
-
2001
- 2001-02-02 FR FR0101442A patent/FR2820545B1/fr not_active Expired - Fee Related
-
2002
- 2002-01-30 WO PCT/FR2002/000361 patent/WO2002063632A1/fr not_active Application Discontinuation
- 2002-01-30 US US10/363,234 patent/US6778440B2/en not_active Expired - Lifetime
- 2002-01-30 EP EP02701353A patent/EP1356473A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR2820545A1 (fr) | 2002-08-09 |
US20030174556A1 (en) | 2003-09-18 |
US6778440B2 (en) | 2004-08-17 |
WO2002063632A1 (fr) | 2002-08-15 |
EP1356473A1 (fr) | 2003-10-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20051031 |