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FR2818292B1 - Chambre de reaction metallique anti-corrosion de procede cvd ou rtp - Google Patents

Chambre de reaction metallique anti-corrosion de procede cvd ou rtp

Info

Publication number
FR2818292B1
FR2818292B1 FR0016596A FR0016596A FR2818292B1 FR 2818292 B1 FR2818292 B1 FR 2818292B1 FR 0016596 A FR0016596 A FR 0016596A FR 0016596 A FR0016596 A FR 0016596A FR 2818292 B1 FR2818292 B1 FR 2818292B1
Authority
FR
France
Prior art keywords
rtp
reaction chamber
metal reaction
corrosion metal
chamber cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0016596A
Other languages
English (en)
Other versions
FR2818292A1 (fr
Inventor
Franck Laporte
Herve Guillon
Rene Pierre Ducret
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Joint Industrial Processors for Electronics
Original Assignee
Joint Industrial Processors for Electronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Joint Industrial Processors for Electronics filed Critical Joint Industrial Processors for Electronics
Priority to FR0016596A priority Critical patent/FR2818292B1/fr
Publication of FR2818292A1 publication Critical patent/FR2818292A1/fr
Application granted granted Critical
Publication of FR2818292B1 publication Critical patent/FR2818292B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
FR0016596A 2000-12-19 2000-12-19 Chambre de reaction metallique anti-corrosion de procede cvd ou rtp Expired - Fee Related FR2818292B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0016596A FR2818292B1 (fr) 2000-12-19 2000-12-19 Chambre de reaction metallique anti-corrosion de procede cvd ou rtp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0016596A FR2818292B1 (fr) 2000-12-19 2000-12-19 Chambre de reaction metallique anti-corrosion de procede cvd ou rtp

Publications (2)

Publication Number Publication Date
FR2818292A1 FR2818292A1 (fr) 2002-06-21
FR2818292B1 true FR2818292B1 (fr) 2003-03-21

Family

ID=8857879

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0016596A Expired - Fee Related FR2818292B1 (fr) 2000-12-19 2000-12-19 Chambre de reaction metallique anti-corrosion de procede cvd ou rtp

Country Status (1)

Country Link
FR (1) FR2818292B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004273472A (ja) * 2003-01-14 2004-09-30 Tadahiro Omi プラズマ処理装置用の部材，処理装置用の部材，プラズマ処理装置，処理装置及びプラズマ処理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6014275B2 (ja) * 1975-09-22 1985-04-12 矢崎総業株式会社 太陽熱利用集熱器の選択吸収面およびその製法
US5789086A (en) * 1990-03-05 1998-08-04 Ohmi; Tadahiro Stainless steel surface having passivation film
US5366585A (en) * 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US6079874A (en) * 1998-02-05 2000-06-27 Applied Materials, Inc. Temperature probes for measuring substrate temperature

Also Published As

Publication number Publication date
FR2818292A1 (fr) 2002-06-21

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Legal Events

Date Code Title Description
ST Notification of lapse