[go: up one dir, main page]

FR2816528B3 - Procede de gravure selective du cuivre et de nettoyage par face et de la circonference d'un substrat - Google Patents

Procede de gravure selective du cuivre et de nettoyage par face et de la circonference d'un substrat

Info

Publication number
FR2816528B3
FR2816528B3 FR0014628A FR0014628A FR2816528B3 FR 2816528 B3 FR2816528 B3 FR 2816528B3 FR 0014628 A FR0014628 A FR 0014628A FR 0014628 A FR0014628 A FR 0014628A FR 2816528 B3 FR2816528 B3 FR 2816528B3
Authority
FR
France
Prior art keywords
circumference
copper
substrate
selective etching
side cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0014628A
Other languages
English (en)
Other versions
FR2816528A1 (fr
Inventor
Lionel Girardie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR0014628A priority Critical patent/FR2816528B3/fr
Publication of FR2816528A1 publication Critical patent/FR2816528A1/fr
Application granted granted Critical
Publication of FR2816528B3 publication Critical patent/FR2816528B3/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
FR0014628A 2000-11-14 2000-11-14 Procede de gravure selective du cuivre et de nettoyage par face et de la circonference d'un substrat Expired - Fee Related FR2816528B3 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0014628A FR2816528B3 (fr) 2000-11-14 2000-11-14 Procede de gravure selective du cuivre et de nettoyage par face et de la circonference d'un substrat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0014628A FR2816528B3 (fr) 2000-11-14 2000-11-14 Procede de gravure selective du cuivre et de nettoyage par face et de la circonference d'un substrat

Publications (2)

Publication Number Publication Date
FR2816528A1 FR2816528A1 (fr) 2002-05-17
FR2816528B3 true FR2816528B3 (fr) 2003-04-04

Family

ID=8856422

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0014628A Expired - Fee Related FR2816528B3 (fr) 2000-11-14 2000-11-14 Procede de gravure selective du cuivre et de nettoyage par face et de la circonference d'un substrat

Country Status (1)

Country Link
FR (1) FR2816528B3 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1711349B (zh) * 2002-11-05 2010-05-26 巴斯福股份公司 半导体表面处理和其中所用的混合物
US20070084793A1 (en) * 2005-10-18 2007-04-19 Nigel Wenden Method and apparatus for producing ultra-high purity water
WO2008098593A1 (fr) * 2007-02-15 2008-08-21 Basf Se Composition d'un décapant du titane

Also Published As

Publication number Publication date
FR2816528A1 (fr) 2002-05-17

Similar Documents

Publication Publication Date Title
FR2817042B1 (fr) Procede et dispositif d'analyse de la surface d'un substrat
GB2344566B (en) Method of manufacturing a substrate for electronic device by using etchant and electronic device having the substrate
IL145341A0 (en) Single wafer type substrate cleaning method and apparatus
GB2370251B (en) Etchant and array substrate having copper lines etched by the etchant
AU2002211485A1 (en) Wafer cleaning module and method for cleaning the surface of a substrate
FR2809867B1 (fr) Substrat fragilise et procede de fabrication d'un tel substrat
DE69825517D1 (de) Herstellungsverfahren eines Halbleiter-Substrats
FR2805394B1 (fr) Dispositif a semiconducteur et procede de fabrication
DE69916728D1 (de) Verfahren zur Reinigung eines Halbleitersubstrats
FR2767603B1 (fr) Procede de fabrication d'un dispositif a semiconducteur sur un substrat semiconducteur
EP0706070A3 (fr) Procédé de gravure sèche d'un substrat semi-conducteur
GB2333267B (en) Method of etching a silicon layer
EP1310988A4 (fr) Dispositif a semi-conducteur et procede de fabrication associe
GB2304457B (en) Method of forming metal wirings on a semiconductor substrate by dry etching
GB0013656D0 (en) Method and apparatus for removing photoresist on a semiconductor wafer
FR2752330B1 (fr) Procede d'elimination de contaminants metalliques d'un substrat simox
IL122937A0 (en) Semiconductor etching process and apparatus
EP1235258A4 (fr) Procede de nettoyage de substrat et procede de fabrication de dispositif semi-conducteur
FR2816528B3 (fr) Procede de gravure selective du cuivre et de nettoyage par face et de la circonference d'un substrat
FR2797523B1 (fr) Procede d'inspection d'un substrat semiconducteur
FR2779006B1 (fr) Procede de formation de silicium poreux dans un substrat de silicium, en particulier pour l'amelioration des performances d'un circuit inductif
FR2782839B1 (fr) Procede de fabrication d'un dispositif a semiconducteur
FR2786926B1 (fr) Procede de fabrication d'un dispositif a semiconducteur du type soi
FR2763780B1 (fr) Procede de fabrication de circuits imprimes sur substrat metallique
FR2737734B1 (fr) Procede de gravure d'un substrat par jets chimiques

Legal Events

Date Code Title Description
ST Notification of lapse