FR2773635B1 - Dispositif et procede de lecture re-ecriture d'une cellule-memoire vive dynamique - Google Patents
Dispositif et procede de lecture re-ecriture d'une cellule-memoire vive dynamiqueInfo
- Publication number
- FR2773635B1 FR2773635B1 FR9800372A FR9800372A FR2773635B1 FR 2773635 B1 FR2773635 B1 FR 2773635B1 FR 9800372 A FR9800372 A FR 9800372A FR 9800372 A FR9800372 A FR 9800372A FR 2773635 B1 FR2773635 B1 FR 2773635B1
- Authority
- FR
- France
- Prior art keywords
- memory cell
- dynamic live
- live memory
- rewrite
- reading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9800372A FR2773635B1 (fr) | 1998-01-15 | 1998-01-15 | Dispositif et procede de lecture re-ecriture d'une cellule-memoire vive dynamique |
| US09/231,423 US6360294B1 (en) | 1998-01-15 | 1999-01-14 | Device and method for simultaneously reading/rewriting a dynamic random-access memory cell using a plurality of amplifiers and isolation circuitry |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9800372A FR2773635B1 (fr) | 1998-01-15 | 1998-01-15 | Dispositif et procede de lecture re-ecriture d'une cellule-memoire vive dynamique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2773635A1 FR2773635A1 (fr) | 1999-07-16 |
| FR2773635B1 true FR2773635B1 (fr) | 2003-01-10 |
Family
ID=9521803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9800372A Expired - Fee Related FR2773635B1 (fr) | 1998-01-15 | 1998-01-15 | Dispositif et procede de lecture re-ecriture d'une cellule-memoire vive dynamique |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6360294B1 (fr) |
| FR (1) | FR2773635B1 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6282606B1 (en) * | 1999-04-02 | 2001-08-28 | Silicon Aquarius, Inc. | Dynamic random access memories with hidden refresh and utilizing one-transistor, one-capacitor cells, systems and methods |
| CN1307647C (zh) * | 2000-07-07 | 2007-03-28 | 睦塞德技术公司 | 动态随机存取存储器、存储器器件及其执行读命令的方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3949385A (en) * | 1974-12-23 | 1976-04-06 | Ibm Corporation | D.C. Stable semiconductor memory cell |
| US5587952A (en) * | 1984-12-17 | 1996-12-24 | Hitachi, Ltd. | Dynamic random access memory including read preamplifiers activated before rewrite amplifiers |
| US4980863A (en) * | 1987-03-31 | 1990-12-25 | Kabushiki Kaisha Toshiba | Semiconductor memory device having switching circuit for coupling together two pairs of bit lines |
| JPS63247997A (ja) * | 1987-04-01 | 1988-10-14 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPH04318391A (ja) * | 1991-04-16 | 1992-11-09 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US5291443A (en) * | 1991-06-26 | 1994-03-01 | Micron Technology, Inc. | Simultaneous read and refresh of different rows in a dram |
| KR970029816A (ko) * | 1995-11-20 | 1997-06-26 | 문정환 | 반도체 메모리 장치의 메모리 구동방법 |
| US5663916A (en) * | 1996-05-21 | 1997-09-02 | Elonex I.P. Holdings, Ltd. | Apparatus and method for minimizing DRAM recharge time |
| JPH10106257A (ja) * | 1996-09-06 | 1998-04-24 | Texas Instr Inc <Ti> | 集積回路のメモリ装置及びプリチャージ動作を与える方法 |
-
1998
- 1998-01-15 FR FR9800372A patent/FR2773635B1/fr not_active Expired - Fee Related
-
1999
- 1999-01-14 US US09/231,423 patent/US6360294B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2773635A1 (fr) | 1999-07-16 |
| US6360294B1 (en) | 2002-03-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20070930 |