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FR2763964B1 - IMPROVEMENT OF THE GAS FLOW IN AN EPITAXY REACTOR - Google Patents

IMPROVEMENT OF THE GAS FLOW IN AN EPITAXY REACTOR

Info

Publication number
FR2763964B1
FR2763964B1 FR9706821A FR9706821A FR2763964B1 FR 2763964 B1 FR2763964 B1 FR 2763964B1 FR 9706821 A FR9706821 A FR 9706821A FR 9706821 A FR9706821 A FR 9706821A FR 2763964 B1 FR2763964 B1 FR 2763964B1
Authority
FR
France
Prior art keywords
improvement
gas flow
epitaxy reactor
epitaxy
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9706821A
Other languages
French (fr)
Other versions
FR2763964A1 (en
Inventor
Didier Dutartre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics SA
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA, SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics SA
Priority to FR9706821A priority Critical patent/FR2763964B1/en
Publication of FR2763964A1 publication Critical patent/FR2763964A1/en
Application granted granted Critical
Publication of FR2763964B1 publication Critical patent/FR2763964B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
FR9706821A 1997-05-28 1997-05-28 IMPROVEMENT OF THE GAS FLOW IN AN EPITAXY REACTOR Expired - Fee Related FR2763964B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9706821A FR2763964B1 (en) 1997-05-28 1997-05-28 IMPROVEMENT OF THE GAS FLOW IN AN EPITAXY REACTOR

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9706821A FR2763964B1 (en) 1997-05-28 1997-05-28 IMPROVEMENT OF THE GAS FLOW IN AN EPITAXY REACTOR

Publications (2)

Publication Number Publication Date
FR2763964A1 FR2763964A1 (en) 1998-12-04
FR2763964B1 true FR2763964B1 (en) 1999-08-13

Family

ID=9507536

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9706821A Expired - Fee Related FR2763964B1 (en) 1997-05-28 1997-05-28 IMPROVEMENT OF THE GAS FLOW IN AN EPITAXY REACTOR

Country Status (1)

Country Link
FR (1) FR2763964B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8656860B2 (en) 2009-04-14 2014-02-25 Solexel, Inc. High efficiency epitaxial chemical vapor deposition (CVD) reactor

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093252A (en) 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
US6406543B1 (en) 1998-07-23 2002-06-18 Applied Materials, Inc. Infra-red transparent thermal reactor cover member
US9870937B2 (en) 2010-06-09 2018-01-16 Ob Realty, Llc High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space
USD1028913S1 (en) 2021-06-30 2024-05-28 Asm Ip Holding B.V. Semiconductor deposition reactor ring

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5551982A (en) * 1994-03-31 1996-09-03 Applied Materials, Inc. Semiconductor wafer process chamber with susceptor back coating
US5476548A (en) * 1994-06-20 1995-12-19 Applied Materials, Inc. Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring
US6093252A (en) * 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
US5653808A (en) * 1996-08-07 1997-08-05 Macleish; Joseph H. Gas injection system for CVD reactors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8656860B2 (en) 2009-04-14 2014-02-25 Solexel, Inc. High efficiency epitaxial chemical vapor deposition (CVD) reactor

Also Published As

Publication number Publication date
FR2763964A1 (en) 1998-12-04

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100129