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FR2757307B1 - FOUR STATE MEMORY CELL - Google Patents

FOUR STATE MEMORY CELL

Info

Publication number
FR2757307B1
FR2757307B1 FR9615606A FR9615606A FR2757307B1 FR 2757307 B1 FR2757307 B1 FR 2757307B1 FR 9615606 A FR9615606 A FR 9615606A FR 9615606 A FR9615606 A FR 9615606A FR 2757307 B1 FR2757307 B1 FR 2757307B1
Authority
FR
France
Prior art keywords
memory cell
state memory
state
cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9615606A
Other languages
French (fr)
Other versions
FR2757307A1 (en
Inventor
Constantin Papadas
Bernard Guillaumot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics SA
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA, SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics SA
Priority to FR9615606A priority Critical patent/FR2757307B1/en
Priority to JP36167297A priority patent/JPH10178116A/en
Priority to EP97410140A priority patent/EP0849742A1/en
Publication of FR2757307A1 publication Critical patent/FR2757307A1/en
Application granted granted Critical
Publication of FR2757307B1 publication Critical patent/FR2757307B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G11C16/0458—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates comprising two or more independent floating gates which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561—Multilevel memory cell aspects
    • G11C2211/5612—Multilevel memory cell with more than one floating gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
FR9615606A 1996-12-13 1996-12-13 FOUR STATE MEMORY CELL Expired - Fee Related FR2757307B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR9615606A FR2757307B1 (en) 1996-12-13 1996-12-13 FOUR STATE MEMORY CELL
JP36167297A JPH10178116A (en) 1996-12-13 1997-12-11 4-state memory cell
EP97410140A EP0849742A1 (en) 1996-12-13 1997-12-12 Four states memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9615606A FR2757307B1 (en) 1996-12-13 1996-12-13 FOUR STATE MEMORY CELL

Publications (2)

Publication Number Publication Date
FR2757307A1 FR2757307A1 (en) 1998-06-19
FR2757307B1 true FR2757307B1 (en) 1999-02-26

Family

ID=9498831

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9615606A Expired - Fee Related FR2757307B1 (en) 1996-12-13 1996-12-13 FOUR STATE MEMORY CELL

Country Status (3)

Country Link
EP (1) EP0849742A1 (en)
JP (1) JPH10178116A (en)
FR (1) FR2757307B1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6320784B1 (en) * 2000-03-14 2001-11-20 Motorola, Inc. Memory cell and method for programming thereof
US20040017693A1 (en) * 2002-07-23 2004-01-29 Tung-Cheng Kuo Method for programming, reading, and erasing a non-volatile memory with multi-level output currents
JP4620334B2 (en) * 2003-05-20 2011-01-26 シャープ株式会社 Semiconductor memory device, semiconductor device, portable electronic device including them, and IC card
KR100650369B1 (en) * 2004-10-01 2006-11-27 주식회사 하이닉스반도체 Non-volatile memory device having a polysilicon floating side wall and its manufacturing method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4754320A (en) * 1985-02-25 1988-06-28 Kabushiki Kaisha Toshiba EEPROM with sidewall control gate
US4804637A (en) * 1985-09-27 1989-02-14 Texas Instruments Incorporated EEPROM memory cell and driving circuitry
EP0590319B1 (en) * 1992-10-02 1998-01-14 Matsushita Electric Industrial Co., Ltd. A non-volatile memory cell

Also Published As

Publication number Publication date
EP0849742A1 (en) 1998-06-24
JPH10178116A (en) 1998-06-30
FR2757307A1 (en) 1998-06-19

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20060831